Abstract: An AlN single crystal Schottky barrier diode including: an AlN single crystal substrate having a defect density of 106 cm?2 or less and a thickness of 300 ?m or more; a first electrode formed on one surface of the AlN single crystal substrate; and a second electrode formed on one surface of the AlN single crystal substrate while being spaced apart from the first electrode, the AlN single crystal Schottky barrier diode being provided with: a rectifying property such that an on-off ratio at the time of applying 10 V and ?40 V is at least 103 even at a high temperature of 573 K; a high voltage resistance such that a voltage can be applied at least within a range of ?40 V to 10 V; and a low on-resistance characteristic such that a current begins to flow at no greater than 5 V.

Abstract: A light emitting element that includes a Ga2O3 substrate; an AlxGa1-xN buffer layer (0?×?1) formed on the Ga2O3 substrate; an n-GaN layer formed on the AlxGa1-xN buffer layer; an p-GaN layer formed on a portion of the n-GaN layer; an n-electrode formed on a portion of the n-GaN layer; and an p-electrode formed on the p-GaN layer.

Abstract: A phosphor (and a method for manufacturing the same, and a light-emitting device that uses this phosphor) includes single crystals including YAG crystals as a mother crystal, the quantum efficiency of the phosphor at 25° C. being 92% or higher at an excitation light wavelength of 460 nm.

Abstract: An AlN single crystal Schottky barrier diode including: an AlN single crystal substrate having a defect density of 106 cm?2 or less and a thickness of 300 ?m or more; a first electrode formed on one surface of the AlN single crystal substrate; and a second electrode formed on one surface of the AlN single crystal substrate while being spaced apart from the first electrode, the AlN single crystal Schottky barrier diode being provided with: a rectifying property such that an on-off ratio at the time of applying 10 V and ?40 V is at least 103 even at a high temperature of 573 K; a high voltage resistance such that a voltage can be applied at least within a range of ?40 V to 10 V; and a low on-resistance characteristic such that a current begins to flow at no greater than 5 V.

Abstract: An optical material used in a UV-excited yellow light-emitting material and an optical isolator, capable of emitting yellow light stably and highly efficiently even if a large current is fed to obtain the high luminance emission. The optical material used for the UV-excited yellow light-emitting material (2) and the optical isolator (210) is an oxide containing Ce, which is a terbium cerium aluminum garnet type single crystal wherein a part of terbium of a terbium aluminum garnet type single crystal is substituted by cerium. The ratio of number of moles of cerium to the total number of moles of terbium and cerium, namely the composition ratio of cerium, preferably falls within the range from 0.01 mol % to 50 mol %. A part of aluminum may be substituted by scandium or further by any one of terbium, cerium, yttrium, lutetium, ytterbium, and thulium.

Abstract: A UV photoexcited red light-emitting material comprising a fluoride single crystal represented by the chemical formula: M1?xRExF2+x?w, wherein M is at least one metal element belonging to Group 2 of the Periodic Table selected from the group consisting of Be, Mg, Ca, Sr, and Ba, RE is a rare earth element, and the relationships: 0<x?0.4 and 0?w?0.5 are satisfied.

Abstract: A light emitting element that includes a Ga2O3 substrate; an AlxGa1?xN buffer layer (0?×?1) formed on the Ga2O3 substrate; an n-GaN layer formed on the AlxGa1?xN buffer layer; an p-GaN layer formed on a portion of the n-GaN layer; an n-electrode formed on a portion of the n-GaN layer; and an p-electrode formed on the p-GaN layer.

Abstract: A garnet-type single crystal is represented by a general formula, A3B2C3O12 (having a crystal structure with three sites A, B and C occupied by cations, wherein A represents an element occupying the site A, B represents an element occupying the site B, C represents an element occupying the site C, O represents an oxygen atom), and contains fluorine, in which the fluorine attains any one or both of substituting for the oxygen atom or compensating for oxygen defect.

Abstract: A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3 where 0?x?1, 0?y?1 and 0?x+y?1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

Abstract: An object of the invention is to provide an iodide single crystal material that provides a scintillator material for the next-generation TOF-PET, and a production process for high-quality iodide single crystal materials. The iodide single crystal material of the invention having the same crystal structure as LuI3 and activated by a luminescence center RE where RE is at least one element selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb is characterized in that a part or the whole of lutetium (Lu) in said iodide single crystal material is substituted by Y and/or Gd.

Abstract: A method of growing a p-type thin film of ?-Ga2O3 includes preparing a substrate including a ?-Ga2O3 single crystal, and growing a p-type thin film of ?-Ga2O3 on the substrate. The p-type thin film is grown in a manner that Ga in the thin film is replaced by a p-type dopant selected from H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, and Pb.

Abstract: A light-emitting element includes a ?-Ga2O3 substrate, a GaN-based semiconductor layer formed on the ?-Ga2O3 substrate, and a double-hetero light-emitting layer formed on the GaN-based semiconductor layer.

Abstract: The object(s) of the invention is to provide a Faraday rotator, an optical isolator, and optical processing equipment, which has a transmittance higher than that of TGG, is capable of upsizing, and has a higher performance index in the visible wavelength region in general, and on wavelengths of up to 400 nm in particular. The Faraday rotator is characterized by containing as a main component a fluoride represented by the following general formula (1) or (2): RE1F3-x??(1) LiRE2F4-x??(2) where 0?x<0.1, and RE1 or RE2 is at least one element selected from the group of rare earth elements.

Abstract: A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3 where 0?x?1, 0?y?1 and 0?x+y?1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

Abstract: A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3 where 0?x?1, 0?y?1 and 0?x+y?1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

Abstract: A method of growing a p-type thin film of ?-Ga2O3 includes preparing a substrate including a ?-Ga2O3 single crystal, and growing a p-type thin film of ?-Ga2O3 on the substrate. The p-type thin film is grown in a manner that Ga in the thin film is replaced by a p-type dopant selected from H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, and Pb.

Abstract: A thin-film single crystal growing method includes preparing a substrate, irradiating an excitation beam on a metallic target made of a pure metal or an alloy in a predetermined atmosphere, and combining chemical species including any of atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with atoms contained in the predetermined atmosphere to form a thin film on the substrate.

Abstract: A light-emitting element includes a ?-Ga2O3 substrate, a GaN-based semiconductor layer formed on the ?-Ga2O3 substrate, and a double-hetero light-emitting layer formed on the GaN-based semiconductor layer.

Abstract: To provide a semiconductor layer in which a GaN system epitaxial layer having high crystal quality can be obtained. The semiconductor layer includes a ?-Ga2O3 substrate 1 made of a ?-Ga2O3 single crystal, a GaN layer 2 formed by subjecting a surface of the ?-Ga2O3 substrate 1 to nitriding processing, and a GaN growth layer 3 formed on the GaN layer 2 through epitaxial growth by utilizing an MOCVD method. Since lattice constants of the GaN layer 2 and the GaN growth layer 3 match each other, and the GaN growth layer 3 grows so as to succeed to high crystalline of the GaN layer 2, the GaN growth layer 3 having high crystalline is obtained.

Abstract: To provide a Ga2O3 compound semiconductor device in which a Ga2O3 system compound is used as a semiconductor, which has an electrode having ohmic characteristics adapted to the Ga2O3 system compound, and which can make a heat treatment for obtaining the ohmic characteristics unnecessary. An n-side electrode 20 including at least a Ti layer is formed on a lower surface of an n-type ?-Ga2O3 substrate 2 by utilizing a PLD method. This n-side electrode 20 has ohmic characteristics at 25° C. The n-side electrode 20 may have two layer including a Ti layer and an Au layer, three layers including a Ti layer, an Al layer and an Au layer, or four layers including a Ti layer, an Al layer, a Ni layer and an Au layer.