Patents by Inventor Ender Hokeler

Ender Hokeler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Source drain doping technique
    Patent number: 4784965
    Abstract: A method of forming metal oxide semiconductor field-effect transistors (MOSFET) is described wherein the source and drain regions are disposed by ion implantation in a manner substantially perpendicular to the substrate surface in two steps, such that the concentration of impurities increases with lateral distance away from the gate electrode member to suppress the hot e injection, to prevent channeling effect, to increase punch through voltage and to increase gate-aided breakdown voltage.
    Type: Grant
    Filed: September 16, 1987
    Date of Patent: November 15, 1988
    Assignee: Intel Corporation
    Inventors: Been-Jon Woo, Mark A. Holler, Ender Hokeler, Sandra S. Lee