Abstract: An apparatus for performing the following. The apparatus maintains, in a memory, information on a computational model for thermal behavior of layers of an insulated-gate bipolar transistor, IGBT, module. The apparatus obtains measurements of the dissipated power at the semiconductors and the ambient temperature and determines one or more current values of one or more temperatures of the IGBT module based on a switching delay of the IGBT module. The apparatus calculates a current estimate of a joint state-parameter space of the computational model using a Bayesian filter and the computational model taking as inputs the dissipated power and the ambient temperature. The joint state-parameter space includes the one or more temperatures, one or more thermal loss parameters and one or more wear parameters. The one or more current values of the one or more temperatures are used as observations in the Bayesian filter.

Abstract: A ballast water treatment apparatus and a ballast water treatment system having a ballast water treatment apparatus are provided. The ballast water treatment apparatus includes a ballast water transport line configured to transport ballast water between a first location and a second location, the transported ballast water being passed through at least one injector, and a plasma generation device configured to be fed with a feed gas optionally comprising oxygen, and configured to generate a feed gas plasma by a streamer type discharge in a discharge area to provide a treated gas at a treated-gas outlet. The injector includes a liquid passage having an area constructed such as to increase a velocity of the passed-through water in a region of increased velocity, and an injector gas inlet provided in the region of increased velocity. The treated-gas outlet is in gaseous connection with the injector gas inlet.

Abstract: A Dielectric Barrier Discharge system controller for controlling a fluid treatment by a Dielectric Barrier Discharge system is provided. Therein, the strength of an effect caused by a discharge created by the Dielectric Barrier Discharge system is monitored, and the generation of high-voltage pulses by the high-voltage pulse generator is controlled. The controlling of the generation of the high-voltage pulses is adapted based on the received sensor data.

Abstract: A full-bridge inverter based on a unipolar switching scheme includes a first branch and a second branch in parallel between a first DC node and a second node, the first branch including a first higher switch and a first lower switch in series, and the second branch including a second higher switch and a second lower switch in series. A filter circuit includes a first inductor and a second inductor. One pin of the first inductor is coupled with a first branch conductor, and the first branch conductor is coupled between the first higher switch and the first lower switch, and an opposite pin of the first inductor is electrically coupled with a first output node. One pin of the second inductor is coupled with a second branch conductor, the second branch conductor is coupled between the second higher switch and the second lower switch, and an opposite pin of the second inductor is coupled with a second output node of the full-bridge inverter.

Abstract: A full-bridge inverter based on a unipolar switching scheme includes a first branch and a second branch in parallel between a first DC node and a second node, the first branch including a first higher switch and a first lower switch in series, and the second branch including a second higher switch and a second lower switch in series. A filter circuit includes a first inductor and a second inductor. One pin of the first inductor is coupled with a first branch conductor, and the first branch conductor is coupled between the first higher switch and the first lower switch, and an opposite pin of the first inductor is electrically coupled with a first output node. One pin of the second inductor is coupled with a second branch conductor, the second branch conductor is coupled between the second higher switch and the second lower switch, and an opposite pin of the second inductor is coupled with a second output node of the full-bridge inverter.

Abstract: A ballast water treatment apparatus and a ballast water treatment system having a ballast water treatment apparatus are provided. The ballast water treatment apparatus includes a ballast water transport line configured to transport ballast water between a first location and a second location, the transported ballast water being passed through at least one injector, and a plasma generation device configured to be fed with a feed gas optionally comprising oxygen, and configured to generate a feed gas plasma by a streamer type discharge in a discharge area to provide a treated gas at a treated-gas outlet. The injector includes a liquid passage having an area constructed such as to increase a velocity of the passed-through water in a region of increased velocity, and an injector gas inlet provided in the region of increased velocity. The treated-gas outlet is in gaseous connection with the injector gas inlet.

Abstract: The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (IC) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of; measuring the characteristics of an emitter voltage drop (VEE?) as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE?) at the auxiliary emitter (EA) during a switching operation of the IGBT device; and determining the junction temperature and/or the collector current (IC) based on the characteristics of the emitter voltage drop (VEE?).

Abstract: The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (Ic) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of; measuring the characteristics of an emitter voltage drop (VEE?) as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE?) at the auxiliary emitter (EA) during a switching operation of the IGBT device; and determining the junction temperature and/or the collector current (IC) based on the characteristics of the emitter voltage drop (VEE?).

Abstract: A system and method are provided for monitoring in real time the operating state of an IGBT device, to determine a junction temperature and/or the remaining lifetime of an IGBT device. The system includes a differential unit configured to receive a gate-emitter voltage characteristic of the IGBT device to be measured and to differentiate the gate-emitter voltage characteristic to obtain pulses correlating with edges formed by a Miller plateau phase during a switch-off phase of the IGBT device. The system also includes a timer unit configured to measure the time delay between the obtained pulses indicating the start and end of the Miller plateau phase during the switch-off phase of the IGBT device, and a junction temperature calculation unit configured to determine at least one of the junction temperature of the IGBT device and/or the remaining lifetime of the IGBT device based on the measured time delay.