Patents by Inventor Eneman Geert

Eneman Geert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150287807
    Abstract: A method for manufacturing a transistor device comprising a channel layer is disclosed. In one example, the method includes providing a substrate, epitaxially growing a strained layer on the substrate (defect free), epitaxially growing the channel layer on the epitaxially grown strained layer, and providing a gate structure on the channel layer. In this example, the method also includes selectively etching into the channel layer and at least partially in the epitaxially grown strained layer, thereby using the gate structure as a mask, and thereby creating a protrusion extending from the substrate. The protrusion may comprise a portion of the channel layer and at least an upper portion of the epitaxially grown strained layer, and may allow for elastic relaxation in the portions.
    Type: Application
    Filed: March 24, 2015
    Publication date: October 8, 2015
    Applicants: SAMSUNG ELECTRONICS CO. LTD., IMEC VZW
    Inventors: Seung Hun Lee, Eneman Geert