Patents by Inventor Enesto Zaparita CAGUIOA, Jr.

Enesto Zaparita CAGUIOA, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stacked MOSFET Circuits And Methods Of Operating Stacked MOSFET Circuits
    Publication number: 20210143814
    Abstract: Example MOSFET circuits include a first metal-oxide-semiconductor field-effect transistor (MOSFET) having a gate, a source and a drain, and a second MOSFET coupled in series with the first MOSFET. The second MOSFET has a gate, a source and a drain. The MOSFET circuit also includes a controller configured to supply a same control signal to the gate of the first MOSFET and the gate of the second MOSFET to turn on or turn off the first MOSFET and the second MOSFET when a drain-source voltage of the first MOSFET and a drain-source voltage of the second MOSFET are substantially zero. Other MOSFET circuits and methods of operating MOSFET circuits are also disclosed.
    Type: Application
    Filed: January 19, 2021
    Publication date: May 13, 2021
    Applicant: Astec International Limited
    Inventors: Yong Tao XIE, Enesto Zaparita CAGUIOA, Jr.