Patents by Inventor Eng Hong Tan

Eng Hong Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11762567
    Abstract: Devices, methods, and media are described for runtime memory allocation to avoid defects. One embodiment includes assigning a plurality of memory blocks of a memory sub-system to a plurality of erase groups, such that each erase group of the plurality of erase groups comprises two or more memory blocks of the plurality of memory blocks. A bad block association is determined for each erase group of the plurality of erase groups. Prior to a memory condition being met, memory resources of the memory sub-system are allocated by erase group based on a first set of criteria which are based at least in part on the bad block association for each erase group in order to prioritize use of erase groups with fewer bad blocks.
    Type: Grant
    Filed: August 6, 2021
    Date of Patent: September 19, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Woei Chen Peh, Eng Hong Tan, Andrew M. Kowles, Xiaoxin Zou, Zaihas Amri Fahdzan Bin Hasfar
  • Publication number: 20210365195
    Abstract: Devices, methods, and media are described for runtime memory allocation to avoid defects. One embodiment includes assigning a plurality of memory blocks of a memory sub-system to a plurality of erase groups, such that each erase group of the plurality of erase groups comprises two or more memory blocks of the plurality of memory blocks. A bad block association is determined for each erase group of the plurality of erase groups. Prior to a memory condition being met, memory resources of the memory sub-system are allocated by erase group based on a first set of criteria which are based at least in part on the bad block association for each erase group in order to prioritize use of erase groups with fewer bad blocks.
    Type: Application
    Filed: August 6, 2021
    Publication date: November 25, 2021
    Inventors: Woei Chen Peh, Eng Hong Tan, Andrew M. Kowles, Xiaoxin Zou, Zaihas Amri Fahdzan Bin Hasfar
  • Patent number: 11112979
    Abstract: Devices, methods, and media are described for runtime memory allocation to avoid defects. One embodiment includes assigning a plurality of memory blocks of a memory sub-system to a plurality of erase groups, such that each erase group of the plurality of erase groups comprises two or more memory blocks of the plurality of memory blocks. A bad block association is determined for each erase group of the plurality of erase groups. Prior to a memory condition being met, memory resources of the memory sub-system are allocated by erase group based on a first set of criteria which are based at least in part on the bad block association for each erase group in order to prioritize use of erase groups with fewer bad blocks.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: September 7, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Woei Chen Peh, Eng Hong Tan, Andrew M. Kowles, Xiaoxin Zou, Zaihas Amri Fahdzan Bin Hasfar
  • Publication number: 20210026547
    Abstract: Devices, methods, and media are described for runtime memory allocation to avoid defects. One embodiment includes assigning a plurality of memory blocks of a memory sub-system to a plurality of erase groups, such that each erase group of the plurality of erase groups comprises two or more memory blocks of the plurality of memory blocks. A bad block association is determined for each erase group of the plurality of erase groups. Prior to a memory condition being met, memory resources of the memory sub-system are allocated by erase group based on a first set of criteria which are based at least in part on the bad block association for each erase group in order to prioritize use of erase groups with fewer bad blocks.
    Type: Application
    Filed: July 26, 2019
    Publication date: January 28, 2021
    Inventors: Woei Chen Peh, Eng Hong Tan, Andrew M. Kowles, Xiaoxin Zou, Zaihas Amri Fahdzan Bin Hasfar