Patents by Inventor Enio Luiz Carpi

Enio Luiz Carpi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for obtaining elliptical and rounded shapes using beam shaping
    Patent number: 6767674
    Abstract: A method of fabricating a mask (316) for patterning a semiconductor wafer. The mask (316) includes elliptical (340) or rounded features formed using an elliptical-shaped energy beam (350). Undesired stair-step shaped edges (344) of the oval (340) or rounded features formed by using a substantially circular-shaped energy beam to form the oval or rounded features are smoothed with the elliptical-shaped energy beam (350). A method of fabricating a semiconductor device with the mask (316) is included. The elliptical-shaped energy beam (350) may also be used to directly pattern a semiconductor wafer.
    Type: Grant
    Filed: October 26, 2001
    Date of Patent: July 27, 2004
    Assignee: Infineon Technologies AG
    Inventor: Enio Luiz Carpi
  • Method for obtaining elliptical and rounded shapes using beam shaping
    Publication number: 20030082461
    Abstract: A method of fabricating a mask (316) for patterning a semiconductor wafer. The mask (316) includes elliptical (340) or rounded features formed using an elliptical-shaped energy beam (350). Undesired stair-step shaped edges (344) of the oval (340) or rounded features formed by using a substantially circular-shaped energy beam to form the oval or rounded features are smoothed with the elliptical-shaped energy beam (350). A method of fabricating a semiconductor device with the mask (316) is included. The elliptical-shaped energy beam (350) may also be used to directly pattern a semiconductor wafer.
    Type: Application
    Filed: October 26, 2001
    Publication date: May 1, 2003
    Inventor: Enio Luiz Carpi
  • Extrusion enhanced mask for improving process window
    Patent number: 6114074
    Abstract: A pattern for a mask used in lithographic processing, in accordance with the invention, includes a plurality of elongated structures disposed substantially parallel to each other on a substrate and a plurality of sub-resolution extrusions extending transversely from the elongated structures into spaces between the elongated structures, the plurality of extrusions having a substantially same size in a direction parallel to the elongated structures, the plurality of extrusions being spaced apart periodically in the direction parallel to the elongated structures, the elongated structures and extrusions being formed from an energy absorbent material.
    Type: Grant
    Filed: March 11, 1999
    Date of Patent: September 5, 2000
    Assignee: Siemens Aktiengesellschaft
    Inventors: Enio Luiz Carpi, Shahid Butt