Abstract: The present disclosure relates to heaters, and related chamber kits and processing chambers, for semiconductor manufacturing. In one or more embodiments, a chamber kit applicable for semiconductor manufacturing includes a heater and a liner. The heater includes an arcuate heater body including one or more first sections, one or more second sections, and one or more connector sections. The heater includes a first electrode coupled to the arcuate heater body, and a second electrode coupled to the arcuate heater body. The liner includes a ledge sized and shaped to support the arcuate heater body, a first opening sized and shaped to receive at least part of the heater therethrough, and a second opening sized and shaped to receive at least part of the heater therethrough.

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

Abstract: Embodiments generally relate to gas circuits for distributing gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, flow controllers of a gas circuit are used to stabilize, distribute, and switch gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, a gas circuit includes one or more first flow controllers operable to flow a first gas, one or more second flow controllers operable to flow a second gas, and one or more valve assemblies. The valve assembl(ies) include a first supply line connected to a respective first flow controller and a second supply line connected to a respective second flow controller. The gas circuit further includes a plurality of valves operable to open and close the respective flow of the first gas and the second gas received from the first flow controller(s) and the second flow controller(s).

Abstract: Embodiments generally relate to gas circuits for distributing gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, flow controllers of a gas circuit are used to stabilize, distribute, and switch gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, a gas circuit includes one or more first ratio flow controllers operable to control a flow of a first gas, a plurality of first valves operable to open and close the flow of the first gas, one or more second ratio flow controllers operable to control a flow of a second gas, and a plurality of second valves operable to open and close the flow of the second gas. The gas circuit further includes a first set of gas lines connected to the first ratio flow controllers, and a second set of gas lines connected to the second ratio flow controllers.

Abstract: A modular reflective heating system for use in a process chamber is provided. The modular reflective heating system includes: a plurality of connectors; a plurality of lamps, each lamp connected to at least one of the connectors; a reflector including: a base; and a reflective assembly including a first plurality of reflective portions and a second plurality of reflective portions. Each reflective portion in the first plurality of reflective portions and the second plurality of reflective portions is connected to the base, and each reflective portion in the first plurality of reflective portions and the second plurality of reflective portions is configured to be individually disconnected from the base. The modular reflective heating system further includes a spare reflective portion configured to replace a first reflective portion in the first plurality of reflective portions or the second plurality of reflective portions.

Abstract: An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the mea

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

Abstract: The present disclosure generally relates to process chambers for semiconductor processing. In one embodiment, a growth monitor for substrate processing is provided. The growth monitor includes a sensor holder and a crystal disposed in the sensor holder having a front side and a back side. An opening is formed in the sensor holder exposing a front side of the crystal. A gas inlet is disposed through the sensor holder to a plenum formed by the back side of the crystal and the sensor holder. A gas outlet is fluidly coupled to the plenum.

Abstract: The present disclosure generally relates to process chambers for semiconductor processing. In one embodiment, a growth monitor for substrate processing is provided. The growth monitor includes a sensor holder and a crystal disposed in the sensor holder having a front side and a back side. An opening is formed in the sensor holder exposing a front side of the crystal. A gas inlet is disposed through the sensor holder to a plenum formed by the back side of the crystal and the sensor holder. A gas outlet is fluidly coupled to the plenum.

Abstract: The present disclosure generally relates to process chambers for semiconductor processing. In one embodiment, a growth monitor for substrate processing is provided. The growth monitor includes a sensor holder and a crystal disposed in the sensor holder having a front side and a back side. An opening is formed in the sensor holder exposing a front side of the crystal. A gas inlet is disposed through the sensor holder to a plenum formed by the back side of the crystal and the sensor holder. A gas outlet is fluidly coupled to the plenum.

Abstract: Apparatus for heating a substrate within a substrate processing chamber are described herein. More specifically, possible lamp modules for use within a substrate processing chamber are described. The lamp modules include a reflector body. The reflector body is a reflective material. The reflector body includes grooves disposed in a surface and configured to direct radiant energy towards a substrate. Each ring includes multiple grooves with different cross sections to allow radiant energy to be directed at different radial positions on the substrate from the same ring. The grooves may be either curved or linear grooves.

Abstract: A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are quartz crystal film thickness monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the deposition chamber. The growth monitors are connected to a controller, which adjusts the heating apparatus and gas flow apparatus settings during the processing operations. Measurements from the growth monitors as well as other sensors within the deposition chamber are used to adjust processing chamber models of the deposition chamber as substrates are processed therein.

Abstract: Embodiments disclosed herein generally relate to in situ monitoring of film growth in processing chambers. In some examples, a sensor assembly for a processing chamber includes a sensor tube including silicon carbide and having an optical path therein and a sensor window including crystalline silicon carbide and having a proximal side coupled to a distal end of the sensor tube. The sensor window covers the optical path, and a distal side of the sensor window facing away from the proximal side is perpendicular to a center axis of the optical path.

Abstract: A process chamber includes a chamber body having a ceiling disposed above a floor with a chassis and an injector ring disposed therebetween. Upper and lower clamp rings secure the upper and floors, respectively, in place. An upper heating module is coupled to the upper clamp ring above the ceiling. A lower heating module is coupled to the lower clamp ring below the floor.

Abstract: One or more embodiments herein relate to methods for detection using optical emission spectroscopy. In these embodiments, an optical signal is delivered from the process chamber to an optical emission spectrometer (OES). The OES identifies emission peaks of photons, which corresponds to the optical intensity of radiation from the photons, to determine the concentrations of each of the precursor gases and reaction products. The OES sends input signals of the data results to a controller. The controller can adjust process variables within the process chamber in real time during deposition based on the comparison. In other embodiments, the controller can automatically trigger a process chamber clean based on a comparison of input signals of process chamber residues received before the deposition process and input signals of process chamber residues received after the deposition process.

Abstract: An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the mea

Abstract: The present invention provides methods and apparatus for processing semiconductor substrates in an epitaxy chamber configured to map a temperature profile for both substrates and interior chamber components. In one embodiment, the semiconductor processing chamber has a body having ceiling and a lower portion defining an interior volume. A substrate support is disposed in the interior volume. A mounting plate is coupled to the ceiling outside the interior volume. A movement assembly is coupled to the mounting plate. A sensor is coupled to the movement assembly and moveable relative to the ceiling. The sensor is configured to detect a temperature location in the interior volume.

Abstract: The present invention provides methods and apparatus for processing semiconductor substrates in an epitaxy chamber configured to map a temperature profile for both substrates and interior chamber components. In one embodiment, the semiconductor processing chamber has a body having ceiling and a lower portion defining an interior volume. A substrate support is disposed in the interior volume. A mounting plate is coupled to the ceiling outside the interior volume. A movement assembly is coupled to the mounting plate. A sensor is coupled to the movement assembly and moveable relative to the ceiling. The sensor is configured to detect a temperature location in the interior volume.

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.