Patents by Inventor Enlian Lu

Enlian Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190043700
    Abstract: A system to measure an impedance of an effluent associated with a foreline (effluent line or exhaust) is provided. This system includes a remote plasma source, a process chamber, an effluent line, an electrode assembly, an RF driver, and a detector. The remote plasma source couples to the process chambers and is operable to supply chamber-cleaning gas to the process chamber. The effluent line also couples to the process chamber where chamber-cleaning effluent exhausts the process chamber via the effluent line. The electrode assembly, located in the effluent line, is exposed to the effluent exhausting from the process chamber. The electrode assembly, coupled to the RF driver, receives an RF signal from the RF driver. The RF signal applied to the electrode assembly induces a plasma discharge within the electrode assembly and effluent line. A detector coupled to the electrode assembly detects an end point of a chamber clean of the process chamber.
    Type: Application
    Filed: August 13, 2018
    Publication date: February 7, 2019
    Inventors: Terry R. Turner, Jerome Cannon, Enlian Lu
  • Publication number: 20110069261
    Abstract: An LCOS device includes a semiconductor substrate and a plurality of MOS transistors that is formed on a portion of the semiconductor substrate. The LCOS device includes a first dielectric layer overlying the plurality of MOS transistors and a patterned metal layer overlying the first dielectric layer. The patterned metal layer exposes portions of the first dielectric layer that form borders surrounding the patterned metal layer, wherein the patterned metal layer includes a plurality of electrodes. The LCOS device further includes a second dielectric layer overlying the exposed portions of the first dielectric layer. In an embodiment, the patterned metal layer comprises a silver bearing material. Each of the plurality of electrodes has an upper surface having a surface roughness of less than 5 Angstrom and a surface reflectivity of greater than 97% for a light having a wavelength of 500 nanometers and greater.
    Type: Application
    Filed: November 30, 2010
    Publication date: March 24, 2011
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Yanghui Oliver Xiang, Enlian Lu
  • Patent number: 7863145
    Abstract: A method for fabricating an LCOS device. The method includes providing a semiconductor substrate and forming a plurality of MOS transistor devices formed on a portion of the semiconductor substrate. The method includes forming a first dielectric layer overlying the plurality of transistor devices and forming a first metal layer overlying the first dielectric layer. The method includes forming a second dielectric layer overlying the first metal layer and forming a plurality of pixel regions made substantially of silver bearing material overlying the second dielectric layer. In a preferred embodiment, the silver bearing material has much higher reflectivity for wavelengths of 450 nanometers and greater.
    Type: Grant
    Filed: September 19, 2008
    Date of Patent: January 4, 2011
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Yanghui Oliver Xiang, Enlian Lu
  • Publication number: 20100072481
    Abstract: A method for fabricating an LCOS device. The method includes providing a semiconductor substrate and forming a plurality of MOS transistor devices formed on a portion of the semiconductor substrate. The method includes forming a first dielectric layer overlying the plurality of transistor devices and forming a first metal layer overlying the first dielectric layer. The method includes forming a second dielectric layer overlying the first metal layer and forming a plurality of pixel regions made substantially of silver bearing material overlying the second dielectric layer. In a preferred embodiment, the silver bearing material has much higher reflectivity for wavelengths of 450 nanometers and greater.
    Type: Application
    Filed: September 19, 2008
    Publication date: March 25, 2010
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Yanghui Oliver Xiang, Enlian Lu
  • Publication number: 20090261839
    Abstract: A system to measure an impedance of an effluent associated with a foreline (effluent line or exhaust) is provided. This system includes a remote plasma source, a process chamber, an effluent line, an electrode assembly, an RF driver, and a detector. The remote plasma source couples to the process chambers and is operable to supply chamber-cleaning gas to the process chamber. The effluent line also couples to the process chamber where chamber-cleaning effluent exhausts the process chamber via the effluent line. The electrode assembly, located in the effluent line, is exposed to the effluent exhausting from the process chamber. The electrode assembly, coupled to the RF driver, receives an RF signal from the RF driver. The RF signal applied to the electrode assembly induces a plasma discharge within the electrode assembly and effluent line. A detector coupled to the electrode assembly detects an end point of a chamber clean of the process chamber.
    Type: Application
    Filed: January 29, 2009
    Publication date: October 22, 2009
    Inventors: Terry R. Turner, Jerome Cannon, Enlian Lu