Patents by Inventor Enn ÖUNPUU

Enn ÖUNPUU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160333476
    Abstract: The invention provides an improved method for producing cathode diffusion barrier layer, and a SOFC with high efficiency and longevity. It comprises depositing a pure ceria or aliovalently doped ceria layer, by ALD, on the electrolyte layer of the sintered half cell. The surface of a electrolyte onto which film is to be deposited is exposed to a dose of vapor from one or more lanthanide first precursors. Any excess of unreacted vapor from that precursor is removed. Next, a vapor dose of the second precursor is brought to the surface and allowed to react. A second purge completes the ALD cycle, which is repeated to build up thicker films. This ceria layer forms a cathode diffusion barrier layer on top of which a cobaltite based cathode layer is applied by screenprinting, and the cathode diffusion barrier layer and cathode layer are heated together to form a SOFC.
    Type: Application
    Filed: January 14, 2014
    Publication date: November 17, 2016
    Inventors: Enn ÖUNPUU, Juhan SUBBI, Sanni SEPPÄLÄ, Jaakko NIINISTÖ, Markku LESKELÄ, Mikko RITALA