Abstract: A position transmitter for acquiring the position of a light beam has at least one group of photodiodes arranged neighboring one another and fashioned strip-shaped such that at least two, typically 5-10, strip-shaped electrodes of a photodiode structure are at least partially covered by the light beam or particle beam whose position is to be acquired. An evaluation circuit measures the photocurrent or a correlated quantity of the individual strip electrodes and indicates the position of the beam on the basis of the distribution of the strengths of the photo currents.

Abstract: A position sensor for supplying digital signals corresponding to the position of a movable part in non-contacting, reliable fashion. A number of individual electrodes are applied on a substrate with a layer of a-Si:H applied thereon. A common, large-area collector electrode is applied over the a-Si:H layer. A light beam is moved over the collector electrode to activate a predetermined combination of photosensitive pixels which may be photodiodes or photoresistors. These pixels are situated between the individual electrodes and the common collector electrode. The output signals of the photodiodes are in the form of a digital code that characterizes the location of the light beam.

Abstract: A highly blocking diode structure having a thin film a-Si:H (amorphous silicon containing hydrogen) layer, suitable for use in constructing image sensor arrays, has two conductive electrodes disposed on opposite sides of the a-Si:H thin film layer. The structure is constructed on an electrically insulating substrate and includes a barrier layer disposed between the a-Si:H layer and the top electrode. The top electrode may consist of indium tin oxide or of palladium silicide, and the barrier layer may consist of silicon oxide produced by converting the surface of the a-Si:H layer. The barrier layer is disposed on that side of the a-Si:H layer opposite the substrate. The barrier layer significantly improves the behavior of the contacts and the stability of the boundary surface between the a-Si:H layer and the transparent metal oxide comprising the electrode. The sequence for constructing the diode arrangement is considerably simplifed.