Patents by Inventor Enos Gombia

Enos Gombia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7099069
    Abstract: An electro-optic (EO) device having a high-resistivity semiconducting crystal and a method of operating such a device. The local shielding of the externally applied field lowers the EO effect, which can be partially or completely inhibited particularly in the low-frequency regime, i.e., less than about 105 Hz. By holding a high-resistivity semiconducting crystal at a suitable temperature, EO response and efficiency are improved, in particular for light signals that are non-modulated or modulated at low frequencies. Preferably, the temperature at which the semiconducting crystal is held during functioning is between 50 and 150° C. Enhancement of the EO effect has been demonstrated also for EO devices operating at relatively large optical powers, i.e., larger than about 0.1 mW.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: August 29, 2006
    Assignee: Pirelli & C. S.p.A.
    Inventors: Andrea Zappettini, Silvia Maria Pietralunga, Enos Gombia
  • Publication number: 20050083566
    Abstract: An electro-optic (EO) device having a high-resistivity semiconducting crystal and a method of operating such a device. The local shielding of the externally applied field lowers the EO effect, which can be partially or completely inhibited particularly in the low-frequency regime, i.e., less than about 105 Hz. By holding a high-resistivity semiconducting crystal at a suitable temperature, EO response and efficiency are improved, in particular for light signals that are non-modulated or modulated at low frequencies. Preferably, the temperature at which the semiconducting crystal is held during functioning is between 50 and 150° C. Enhancement of the EO effect has been demonstrated also for EO devices operating at relatively large optical powers, i.e., larger than about 0.1 mW.
    Type: Application
    Filed: December 18, 2001
    Publication date: April 21, 2005
    Inventors: Andrea Zappettini, Silvia Pietralunga, Enos Gombia