Abstract: A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, prepared in a single sputter chamber without a vacuum break.

Abstract: A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, prepared in a single sputter chamber without a vacuum break.

Abstract: A method of making a magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering, comprising providing a substrate comprising silicon wafers and thermal oxide, performing DC magnetron sputtering, back-sputtering the substrate, growing amorphous carbon on the substrate, sputtering and growing a first ferromagnetic metal surface on the amorphous carbon, annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface, forming a graphene film on the first ferromagnetic metal surface, wherein the first ferromagnetic metal surface comprises NiFe, sputtering and growing a second ferromagnetic film on the graphene film, and capping the second ferromagnetic film with a platinum layer.

Abstract: A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, prepared in a single sputter chamber without a vacuum break.

Abstract: A method of making a graphene spin filter device by chemical vapor deposition comprising providing a first crystalline ferromagnetic metal surface, performing chemical vapor deposition and growing a graphene film on the first ferromagnetic metal surface, and depositing a second ferromagnetic film on the graphene film. A graphene spin filter device wherein the graphene is grown by chemical vapor deposition comprising a first crystalline ferromagnetic metal surface, a graphene film grown by chemical vapor deposition on the first ferromagnetic metal surface, and a second ferromagnetic film on the graphene film.

Abstract: A method of making a low-dimensional material chemical vapor sensor comprising exfoliating MoS2, applying the monolayer flakes of MoS2 onto a SiO2/Si wafer, applying a methylmethacrylate (MMA)/polymethylmethacrylate (PMMA) film, defining trenches for the deposition of metal contacts, and depositing one of Ti/Au, Au, and Pt in the trench and resulting in a MoS2 sensor. A low-dimensional material chemical vapor sensor comprising monolayer flakes of MoS2, trenches in the SiO2/Si wafer, metal contacts in the trenches, and thereby resulting in a MoS2 sensor. A full spectrum sensing suite comprising similarly fabricated parallel sensors made from a variety of low-dimensional materials including graphene, carbon nanotubes, MoS2, BN, and the family of transition metal dichalcogenides. The sensing suites are small, robust, sensitive, low-power, inexpensive, and fast in their response to chemical vapor analytes.

Abstract: A method of making a low-dimensional material chemical vapor sensor comprising exfoliating MoS2, applying the monolayer flakes of MoS2 onto a SiO2/Si wafer, applying a methylmethacrylate (MMA)/polymethylmethacrylate (PMMA) film, defining trenches for the deposition of metal contacts, and depositing one of Ti/Au, Au, and Pt in the trench and resulting in a MoS2 sensor. A low-dimensional material chemical vapor sensor comprising monolayer flakes of MoS2, trenches in the SiO2/Si wafer, metal contacts in the trenches, and thereby resulting in a MoS2 sensor. A full spectrum sensing suite comprising similarly fabricated parallel sensors made from a variety of low-dimensional materials including graphene, carbon nanotubes, MoS2, BN, and the family of transition metal dichalcogenides. The sensing suites are small, robust, sensitive, low-power, inexpensive, and fast in their response to chemical vapor analytes.