Patents by Inventor Enzo Carollo
Enzo Carollo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11302471Abstract: An integrated transformer includes a primary winding and a secondary winding each having a spiral planar arrangement coils. A dielectric portion of dielectric material is interposed between the primary winding and the secondary winding. A field plate winding is electrically coupled with the primary winding. The field plate winding includes at least one field plate coil having a first lateral extension greater than a second lateral extension of a primary outer coil of the primary winding. The field plate coil is superimposed in plan view to the primary outer coil of the primary winding.Type: GrantFiled: January 16, 2020Date of Patent: April 12, 2022Assignee: STMicroelectronics S.r.l.Inventors: Vincenzo Palumbo, Gabriella Ghidini, Enzo Carollo, Fabrizio Fausto Renzo Toia
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Publication number: 20200152377Abstract: An integrated transformer includes a primary winding and a secondary winding each having a spiral planar arrangement coils. A dielectric portion of dielectric material is interposed between the primary winding and the secondary winding. A field plate winding is electrically coupled with the primary winding. The field plate winding includes at least one field plate coil having a first lateral extension greater than a second lateral extension of a primary outer coil of the primary winding. The field plate coil is superimposed in plan view to the primary outer coil of the primary winding.Type: ApplicationFiled: January 16, 2020Publication date: May 14, 2020Applicant: STMicroelectroics S.r.l.Inventors: Vincenzo PALUMBO, Gabriella GHIDINI, Enzo CAROLLO, Fabrizio Fausto Renzo TOIA
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Patent number: 10541079Abstract: An integrated transformer includes a primary winding and a secondary winding each having a spiral planar arrangement coils. A dielectric portion of dielectric material is interposed between the primary winding and the secondary winding. A field plate winding is electrically coupled with the primary winding. The field plate winding includes at least one field plate coil having a first lateral extension greater than a second lateral extension of a primary outer coil of the primary winding. The field plate coil is superimposed in plan view to the primary outer coil of the primary winding.Type: GrantFiled: February 5, 2019Date of Patent: January 21, 2020Assignee: STMicroelectronics S.r.l.Inventors: Vincenzo Palumbo, Gabriella Ghidini, Enzo Carollo, Fabrizio Fausto Renzo Toia
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Publication number: 20190172631Abstract: An integrated transformer includes a primary winding and a secondary winding each having a spiral planar arrangement coils. A dielectric portion of dielectric material is interposed between the primary winding and the secondary winding. A field plate winding is electrically coupled with the primary winding. The field plate winding includes at least one field plate coil having a first lateral extension greater than a second lateral extension of a primary outer coil of the primary winding. The field plate coil is superimposed in plan view to the primary outer coil of the primary winding.Type: ApplicationFiled: February 5, 2019Publication date: June 6, 2019Applicant: STMicroelectronics S.r.l.Inventors: Vincenzo PALUMBO, Gabriella GHIDINI, Enzo CAROLLO, Fabrizio Fausto Renzo TOIA
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Patent number: 10236115Abstract: An integrated transformer includes a primary winding and a secondary winding each having a spiral planar arrangement coils. A dielectric portion of dielectric material is interposed between the primary winding and the secondary winding. A field plate winding is electrically coupled with the primary winding. The field plate winding includes at least one field plate coil having a first lateral extension greater than a second lateral extension of a primary outer coil of the primary winding. The field plate coil is superimposed in plan view to the primary outer coil of the primary winding.Type: GrantFiled: June 8, 2015Date of Patent: March 19, 2019Assignee: STMicroelectronics S.r.l.Inventors: Vincenzo Palumbo, Gabriella Ghidini, Enzo Carollo, Fabrizio Fausto Renzo Toia
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Publication number: 20150364249Abstract: An integrated transformer includes a primary winding and a secondary winding each having a spiral planar arrangement coils. A dielectric portion of dielectric material is interposed between the primary winding and the secondary winding. A field plate winding is electrically coupled with the primary winding. The field plate winding includes at least one field plate coil having a first lateral extension greater than a second lateral extension of a primary outer coil of the primary winding. The field plate coil is superimposed in plan view to the primary outer coil of the primary winding.Type: ApplicationFiled: June 8, 2015Publication date: December 17, 2015Applicant: STMicroelectronics S.r.l.Inventors: Vincenzo Palumbo, Gabriella Ghidini, Enzo Carollo, Fabrizio Toia
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Patent number: 9111773Abstract: A three dimensional shallow trench isolation structure including sets of parallel trenches extending in two perpendicular directions may be formed by depositing a conformal deposition in a first set of parallel trenches, oxidizing the second set of trenches to enable selective deposition in said second set of trenches and then conformally depositing in said second set of trenches. In some embodiments, only one wet anneal, one etch back, and one high density plasma chemical vapor deposition step may be used to fill both sets of trenches.Type: GrantFiled: December 11, 2014Date of Patent: August 18, 2015Assignee: Micron Technology, Inc.Inventors: Enzo Carollo, Marcello Mariani, Sara Marelli, Luca Di Piazza
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Publication number: 20150091128Abstract: A three dimensional shallow trench isolation structure including sets of parallel trenches extending in two perpendicular directions may be formed by depositing a conformal deposition in a first set of parallel trenches, oxidizing the second set of trenches to enable selective deposition in said second set of trenches and then conformally depositing in said second set of trenches. In some embodiments, only one wet anneal, one etch back, and one high density plasma chemical vapor deposition step may be used to fill both sets of trenches.Type: ApplicationFiled: December 11, 2014Publication date: April 2, 2015Inventors: Enzo Carollo, Marcello Mariani, Sara Marelli, Luca Di Piazza
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Patent number: 8932935Abstract: A three dimensional shallow trench isolation structure including sets of parallel trenches extending in two perpendicular directions may be formed by depositing a conformal deposition in a first set of parallel trenches, oxidizing the second set of trenches to enable selective deposition in said second set of trenches and then conformally depositing in said second set of trenches. In some embodiments, only one wet anneal, one etch back, and one high density plasma chemical vapor deposition step may be used to fill both sets of trenches.Type: GrantFiled: November 23, 2010Date of Patent: January 13, 2015Assignee: Micron Technology, Inc.Inventors: Enzo Carollo, Marcello Mariani, Sara Marelli, Luca Di Piazza
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Publication number: 20120126374Abstract: A three dimensional shallow trench isolation structure including sets of parallel trenches extending in two perpendicular directions may be formed by depositing a conformal deposition in a first set of parallel trenches, oxidizing the second set of trenches to enable selective deposition in said second set of trenches and then conformally depositing in said second set of trenches. In some embodiments, only one wet anneal, one etch back, and one high density plasma chemical vapor deposition step may be used to fill both sets of trenches.Type: ApplicationFiled: November 23, 2010Publication date: May 24, 2012Inventors: Enzo Carollo, Marcello Mariani, Sara Marelli, Luca Di Piazza
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Publication number: 20100221904Abstract: A non-volatile memory electronic device integrated on a semiconductor substrate includes non-volatile memory cells organized in a matrix, and circuitry associated therewith. Each memory cell includes a gate electrode projecting from the semiconductor substrate. Source and drain regions are formed in the semiconductor substrate and aligned with the gate electrodes. At least one portion of the gate electrodes are insulated from each other by air-gaps which are closed on top by a third non-conforming dielectric layer.Type: ApplicationFiled: May 13, 2010Publication date: September 2, 2010Inventors: Daniela Brazzelli, Giorgio Servalli, Enzo Carollo
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Publication number: 20070184615Abstract: A non-volatile memory electronic device integrated on a semiconductor substrate includes non-volatile memory cells organized in a matrix, and circuitry associated therewith. Each memory cell includes a gate electrode projecting from the semiconductor substrate. Source and drain regions are formed in the semiconductor substrate and aligned with the gate electrodes. At least one portion of the gate electrodes are insulated from each other by air-gaps which are closed on top by a third non-conforming dielectric layer.Type: ApplicationFiled: December 29, 2006Publication date: August 9, 2007Applicant: STMicroelectronics S.r.l.Inventors: Daniela Brazzelli, Giorgio Servalli, Enzo Carollo
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Patent number: 6953609Abstract: A high-density plasma process is proposed for depositing a layer of Silicon Nitride on a substrate in a plasma reactor. The process includes the steps of: providing a gas including precursor components of the Silicon Nitride, generating a plasma applying a radio-frequency power to the gas, and the plasma reacting with the substrate to deposit the layer of Silicon Nitride. The power applied to the gas is in the range from 2.5 kW to 4 kW.Type: GrantFiled: October 14, 2003Date of Patent: October 11, 2005Assignee: STMicroelectronics S.r.l.Inventor: Enzo Carollo
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Publication number: 20040137169Abstract: A high-density plasma process is proposed for depositing a layer of Silicon Nitride on a substrate in a plasma reactor. The process includes the steps of: providing a gas including precursor components of the Silicon Nitride, generating a plasma applying a radio-frequency power to the gas, and the plasma reacting with the substrate to deposit the layer of Silicon Nitride. The power applied to the gas is in the range from 2.5 kW to 4 kW.Type: ApplicationFiled: October 14, 2003Publication date: July 15, 2004Applicant: STMicroelectronics S.r.I.Inventor: Enzo Carollo