Abstract: Systems and methods for handling idle websites on a Web server are disclosed. The duration between requests for a website application is monitored and compared to an idle time-out value. The idle time-out value may be a user-selected value that is the same for all website applications or an idle time-out value selected for a group of worker processes. When the idle time-out value is reached, all inactive memory allocations for the website application are paged-out. When a request for the website application is later received, memory for the website application is paged-in so that the request can be processed.

Abstract: A method includes acts for providing a VOD or streaming video manifest. The method includes at a server, receiving a request for a manifest from a client device. The request for a manifest includes an identification of one or more filters to be applied to a returned manifest. The method further includes, at the server, identifying the manifest. The manifest identifies different portions of a multimedia asset that can be delivered to client devices. The method further includes applying the one or more identified filters to the manifest to generate a filtered manifest that excludes one or more items as dictated by the one or more filters. The filtered manifest is returned to the client device.

Abstract: Systems and methods for handling idle websites on a Web server are disclosed. The duration between requests for a website application is monitored and compared to an idle time-out value. The idle time-out value may be a user-selected value that is the same for all website applications or an idle time-out value selected for a group of worker processes. When the idle time-out value is reached, all inactive memory allocations for the website application are paged-out. When a request for the website application is later received, memory for the website application is paged-in so that the request can be processed.

Abstract: Systems and methods for handling idle websites on a Web server are disclosed. The duration between requests for a website application is monitored and compared to an idle time-out value. The idle time-out value may be a user-selected value that is the same for all website applications or an idle time-out value selected for a group of worker processes. When the idle time-out value is reached, all inactive memory allocations for the website application are paged-out. When a request for the website application is later received, memory for the website application is paged-in so that the request can be processed.

Abstract: A method includes acts for providing a VOD or streaming video manifest. The method includes at a server, receiving a request for a manifest from a client device. The request for a manifest includes an identification of one or more filters to be applied to a returned manifest. The method further includes, at the server, identifying the manifest. The manifest identifies different portions of a multimedia asset that can be delivered to client devices. The method further includes applying the one or more identified filters to the manifest to generate a filtered manifest that excludes one or more items as dictated by the one or more filters. The filtered manifest is returned to the client device.

Abstract: Systems and methods for handling idle websites on a Web server are disclosed. The duration between requests for a website application is monitored and compared to an idle time-out value. The idle time-out value may be a user-selected value that is the same for all website applications or an idle time-out value selected for a group of worker processes. When the idle time-out value is reached, all inactive memory allocations for the website application are paged-out. When a request for the website application is later received, memory for the website application is paged-in so that the request can be processed.

Abstract: Embodiments disclose a reverse lookup using an IP:Port-to-hostname table to identify a hostname when only an IP address and port is present in an SSL hello connection, which may occur, for example, when a non-SNI-capable client initiates the SSL hello. Once the hostname is successfully looked up, a naming convention is used to simplify the management and identification of SSL certificates. Different types of SSL certificates are supported. Multiple hostname matches may be associated with a given IP address and port in the IP:Port-to-hostname table. In such case, the first-matching hostname is always used with the naming convention to identify related SSL certificates. The naming convention is applied in such a way that it will first look for the most matching file name to the least matching file name.

Abstract: Embodiments disclose a reverse lookup using an IP:Port-to-hostname table to identify a hostname when only an IP address and port is present in an SSL hello connection, which may occur, for example, when a non-SNI-capable client initiates the SSL hello. Once the hostname is successfully looked up, a naming convention is used to simplify the management and identification of SSL certificates. Different types of SSL certificates are supported. Multiple hostname matches may be associated with a given IP address and port in the IP:Port-to-hostname table. In such case, the first-matching hostname is always used with the naming convention to identify related SSL certificates. The naming convention is applied in such a way that it will first look for the most matching file name to the least matching file name.

Abstract: A method for forming a polycrystalline silicon thin film transistor. The method includes the steps of: forming a polycrystalline silicon layer including multiple protrusions by crystallizing the amorphous silicon layer according to a crystallization method in which the multiple protrusions are formed due to collision between crystal grains; patterning the polycrystalline silicon layer in an active pattern which includes only two protrusions of the multiple protrusions, which are apart from each other and located at both sides of a gate electrode-forming area; applying a barrier layer on the patterned polycrystalline silicon layer while partially covering the two protrusions; and forming a source electrode and a drain electrode at the protrusions of the polycrystalline silicon layer formed at both sides of the gate electrode-forming area by ion-implanting dopants into a resultant lamination.

Abstract: Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited on a glass substrate by irradiating a laser beam onto the amorphous silicon film using a mask pattern. The glass substrate is horizontally moved by a predetermined distance unit corresponding to a translation distance of the mask pattern when the laser beam is irradiated onto the amorphous silicon film through a mask having the mask pattern, thereby growing grains in a circular shape.

Abstract: Disclosed herein is a method for forming a polycrystalline (poly-Si) film by the crystallization of an amorphous silicon film using laser light irradiation. The disclosed method comprises the steps of: sequentially depositing a buffer film and an amorphous silicon film on a glass substrate; depositing a metal film having laser light reflection function on the back side of the glass substrate; and irradiating the front side of the amorphous silicon film with laser light to crystallize the amorphous silicon film. In the laser light irradiation step, the irradiated laser light is absorbed into the amorphous silicon film, and a portion of the absorbed laser light is transmitted through the amorphous silicon film. The transmitted light is reflected from the metal film and absorbed into the amorphous silicon film again, thus crystallizing the amorphous silicon film twice over.

Abstract: Disclosed is a method for forming a polycrystalline silicon film by crystallizing an amorphous silicon film. A mask has first to third shot regions having the same length. The first to third shot regions have transmission sections and non-transmission sections, which are alternately aligned. The transmission sections of the first shot region are positioned corresponding to the non-transmission sections of the second shot region, the non-transmission sections of the first shot region are positioned corresponding to the transmission sections of the second shot region, and the transmission sections of the third shot region are aligned corresponding to center portions of the transmission sections of the first and second shot regions. Primary to nth laser irradiation processes are performed with respect to the glass substrate, thereby crystallizing the amorphous silicon film into the polycrystalline silicon film.