Abstract: A method of manufacturing a thin film transistor (TFT) substrate to minimize a rugged surface of an organic layer overlapping with a storage electrode is provided. The method includes forming a passivation layer on a substrate having a storage electrode and an organic layer covering the passivation layer, forming a concave portion by partially removing a portion of the organic layer that overlaps with the storage electrode, planarizing a rugged pattern located on the bottom of the concave portion, and forming an opening extending to a surface of the passivation layer by removing the planarized organic layer from the concave portion.

Abstract: A method of manufacturing a thin film transistor (TFT) substrate to minimize a rugged surface of an organic layer overlapping with a storage electrode is provided. The method includes forming a passivation layer on a substrate having a storage electrode and an organic layer covering the passivation layer, forming a concave portion by partially removing a portion of the organic layer that overlaps with the storage electrode, planarizing a rugged pattern located on the bottom of the concave portion, and forming an opening extending to a surface of the passivation layer by removing the planarized organic layer from the concave portion.

Abstract: A thin film transistor substrate comprises an insulating substrate, a gate member formed on the insulating substrate, the gate member having a gate line and a first storage electrode spaced apart from the gate line, a gate insulating layer covering the gate member, an active layer formed on the gate insulating layer and overlapping the first storage electrode, and a data member formed on the active layer, the data member having a data line crossing the gate line and a second storage electrode overlapping the first storage electrode.