Abstract: According to an aspect of the present inventive concept there is provided a photo-sensitive device comprising: a stack forming a photodiode, which stack comprises a photon-absorbing layer, wherein the photon-absorbing layer is configured to generate charges in response to incident light on the photo-sensitive device, defining a photo-sensitive region, wherein a guard ring structure is arranged along a boundary of the photo-sensitive region, said guard ring structure comprising a third electrode layer being physically and electrically separated from the first electrode layer, and an insulator layer, wherein the photo-sensitive device is configured to apply a bias voltage to provide an electric potential difference between the photo-sensitive region and the guard ring structure, to thereby electrically suppress crosstalk.

Abstract: An aspect comprising an optical sensor is disclosed. The optical sensor comprises stacked layers comprising: a window layer configured to allow the passage of photons; a sensing layer configured to generate charges upon impinging of the photons through the window layer; and a bottom electrode layer comprising at least one bottom electrode for receiving charges generated in the sensing layer. The sensing layer is sandwiched between the window layer and the bottom electrode layer. The at least one bottom electrode of the bottom electrode layer comprises conductive material with reflectivity higher than 0.7 to reflect back received photons into the sensing layer; and the at least one bottom electrode is obtained by semiconductor device fabrication techniques.

Abstract: An aspect comprising an optical sensor is disclosed. The optical sensor comprises stacked layers comprising: a window layer configured to allow the passage of photons; a sensing layer configured to generate charges upon impinging of the photons through the window layer; and a bottom electrode layer comprising at least one bottom electrode for receiving charges generated in the sensing layer. The sensing layer is sandwiched between the window layer and the bottom electrode layer. The at least one bottom electrode of the bottom electrode layer comprises conductive material with reflectivity higher than 0.7 to reflect back received photons into the sensing layer; and the at least one bottom electrode is obtained by semiconductor device fabrication techniques.