Patents by Inventor Epimitheas Georgitzikis

Epimitheas Georgitzikis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optical sensor and thin film photodiode
    Patent number: 11757056
    Abstract: An aspect comprising an optical sensor is disclosed. The optical sensor comprises stacked layers comprising: a window layer configured to allow the passage of photons; a sensing layer configured to generate charges upon impinging of the photons through the window layer; and a bottom electrode layer comprising at least one bottom electrode for receiving charges generated in the sensing layer. The sensing layer is sandwiched between the window layer and the bottom electrode layer. The at least one bottom electrode of the bottom electrode layer comprises conductive material with reflectivity higher than 0.7 to reflect back received photons into the sensing layer; and the at least one bottom electrode is obtained by semiconductor device fabrication techniques.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: September 12, 2023
    Assignees: IMEC vzw, Katholieke Universiteit Leuven
    Inventors: Yunlong Li, Epimitheas Georgitzikis, David Cheyns
  • OPTICAL SENSOR AND THIN FILM PHOTODIODE
    Publication number: 20210134886
    Abstract: An aspect comprising an optical sensor is disclosed. The optical sensor comprises stacked layers comprising: a window layer configured to allow the passage of photons; a sensing layer configured to generate charges upon impinging of the photons through the window layer; and a bottom electrode layer comprising at least one bottom electrode for receiving charges generated in the sensing layer. The sensing layer is sandwiched between the window layer and the bottom electrode layer. The at least one bottom electrode of the bottom electrode layer comprises conductive material with reflectivity higher than 0.7 to reflect back received photons into the sensing layer; and the at least one bottom electrode is obtained by semiconductor device fabrication techniques.
    Type: Application
    Filed: October 27, 2020
    Publication date: May 6, 2021
    Inventors: Yunlong Li, Epimitheas Georgitzikis, David Cheyns