Abstract: A semiconductor processing method of providing a hemispherical grain polysilicon layer atop a substrate includes, a) providing a substantially amorphous layer of silicon over a substrate at a selected temperature; b) raising the temperature of the substantially amorphous silicon layer to a higher dielectric layer deposition temperature, the temperature raising being effective to transform the amorphous silicon layer into hemispherical grain polysilicon; and c) depositing a dielectric layer over the silicon layer at the higher dielectric deposition temperature. Transformation to hemispherical grain might occur during the temperature rise to the higher dielectric layer deposition temperature, after the higher dielectric layer deposition temperature has been achieved but before dielectric layer deposition, or after the higher dielectric layer deposition temperature has been achieved and during dielectric layer deposition.

Abstract: A semiconductor processing method of providing a hemispherical grain polysilicon layer atop a substrate includes, a) providing a substantially amorphous layer of silicon over a substrate at a selected temperature; b) raising the temperature of the substantially amorphous silicon layer to a higher dielectric layer deposition temperature, the temperature raising being effective to transform the amorphous silicon layer into hemispherical grain polysilicon; and c) depositing a dielectric layer over the silicon layer at the higher dielectric deposition temperature. Transformation to hemispherical grain might occur during the temperature rise to the higher dielectric layer deposition temperature, after the higher dielectric layer deposition temperature has been achieved but before dielectric layer deposition, or after the higher dielectric layer deposition temperature has been achieved and during dielectric layer deposition.

Abstract: A semiconductor processing method of providing a hemispherical grain polysilicon layer atop a substrate includes, a) providing a substantially amorphous layer of silicon over a substrate at a selected temperature; b) raising the temperature of the substantially amorphous silicon layer to a higher dielectric layer deposition temperature, the temperature raising being effective to transform the amorphous silicon layer into hemispherical grain polysilicon; and c) depositing a dielectric layer over the silicon layer at the higher dielectric deposition temperature. Transformation to hemispherical grain might occur during the temperature rise to the higher dielectric layer deposition temperature, after the higher dielectric layer deposition temperature has been achieved but before dielectric layer deposition, or after the higher dielectric layer deposition temperature has been achieved and during dielectric layer deposition.

Abstract: A semiconductor processing method of providing a doped polysilicon layer atop a substrate includes, a) depositing a layer of substantially amorphous silicon having a dopant concentration of less than or equal to about 1.times.10.sup.16 atoms/cm.sup.3 over a substrate to a thickness of less than or equal to about 30 Angstroms; b) depositing a layer of silicon over the amorphous silicon layer in a manner which in situ dopes such layer to a dopant concentration of greater than about 1.times.10.sup.16 atoms/cm.sup.3 ; and c) providing the deposited silicon layers to be polycrystalline. Preferably, the substantially amorphous layer is entirely undoped as-deposited. The invention is believed to have greatest applicability to provision of thin film doped polysilicon layers having thicknesses of less than or equal to about 100 Angstroms. Accordingly, the combined thickness of the deposited silicon layers is preferably less than or equal to about 100 Angstroms.

Abstract: A semiconductor processing method of providing a doped polysilicon layer atop a substrate includes, a) depositing a layer of substantially amorphous silicon having a dopant concentration of less than or equal to about 1.times.10.sup.16 atoms/cm.sup.3 over a substrate to a thickness of less than or equal to about 30 Angstroms; b) depositing a layer of silicon over the amorphous silicon layer in a manner which in situ dopes such layer to a dopant concentration of greater than about 1.times.10.sup.16 atoms/cm.sup.3 ; and c) providing the deposited silicon layers to be polycrystalline. Preferably, the substantially amorphous layer is entirely undoped as-deposited. The invention is believed to have greatest applicability to provision of thin film doped polysilicon layers having thicknesses of less than or equal to about 100 Angstroms. Accordingly, the combined thickness of the deposited silicon layers is preferably less than or equal to about 100 Angstroms.

Abstract: A semiconductor processing method of providing a hemispherical grain polysilicon layer atop a substrate includes, a) providing a substantially amorphous layer of silicon over a substrate at a selected temperature; b) raising the temperature of the substantially amorphous silicon layer to a higher dielectric layer deposition temperature, the temperature raising being effective to transform the amorphous silicon layer into hemispherical grain polysilicon; and c) depositing a dielectric layer over the silicon layer at the higher dielectric deposition temperature. Transformation to hemispherical grain might occur during the temperature rise to the higher dielectric layer deposition temperature, after the higher dielectric layer deposition temperature has been achieved but before dielectric layer deposition, or after the higher dielectric layer deposition temperature has been achieved and during dielectric layer deposition.