Abstract: A computerized method performed by a processor, an apparatus and a computer program product the method comprising: receiving a model associated with a baseline of one or more biomechanical parameters of one or more action types of a subject, the model describing the biomechanical parameters during a first time period; obtaining one or more values characterizing the biomechanical parameter of the action type in an uncontrolled environment during a second time period, the second time period being later than the first time period; determining whether the value characterizing the biomechanical parameter during the second time period are in compliance with the model; and outputting an alert if the values are not in compliance with the model.

Abstract: A computerized method performed by a processor, an apparatus and a computer program product the method comprising: receiving a model associating motion parameters of an action performed by a subject with a score, the model based at least partially on data obtained in a controlled environment while performing a task on a first time period; determining action parameters during motion of the subject within an uncontrolled environment on a second time period; and providing the action parameters to the model, to obtain an assessment of an expected score for the subject performance of the task as would be performed by the subject in the controlled environment.

Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

Abstract: A computerized method performed by a processor, an apparatus and a computer program product the method comprising: receiving a model associating motion parameters of an action performed by a subject with a score, the model based at least partially on data obtained in a controlled environment while performing a task on a first time period; determining action parameters during motion of the subject within an uncontrolled environment on a second time period; and providing the action parameters to the model, to obtain an assessment of an expected score for the subject performance of the task as would be performed by the subject in the controlled environment.

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

Abstract: Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Machine learning algorithm application to measurements and/or simulations of metrology measurements of metrology targets are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

Abstract: Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Machine learning algorithm application to measurements and/or simulations of metrology measurements of metrology targets are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

Abstract: A computerized method performed by a processor, and computer program product the method comprising: receiving sensory data of motion by a human subject, the sensory data obtained during motion in an uncontrolled environment; extracting features from the sensory data; identifying a plurality of strides from the features extracted from the sensory data; calculating kinematic parameters of each stride from the plurality of strides from the sensory data; classifying each stride from the plurality of strides in accordance with the kinematic parameters to obtain a stride type; and outputting the stride type for the plurality of strides.

Abstract: Scatterometry overlay (SCOL) measurement methods, systems and targets are provided to enable efficient SCOL metrology with in-die targets. Methods comprise generating a signal matrix by: illuminating a SCOL target at multiple values of at least one illumination parameter, and at multiple spot locations on the target, wherein the illumination is at a NA (numerical aperture) >? yielding a spot diameter <1?, measuring interference signals of zeroth and first diffraction orders, and constructing the signal matrix from the measured signals with respect to the illumination parameters and the spot locations on the target; and deriving a target overlay by analyzing the signal matrix. The SCOL targets may be reduced to be a tenth in size with respect to prior art targets, as less and smaller target cells are required, and be easily set in-die to improve the accuracy and fidelity of the metrology measurements.

Abstract: A method of determining overlay (“OVL”) in a pattern in a semiconductor wafer manufacturing process comprises capturing images from a cell in a metrology target formed in at least two different layers in the wafer with parts of the target offset in opposing directions with respect to corresponding parts in a different layer. The images may be captured using radiation of multiple different wavelengths, each image including +1 and ?1 diffraction patterns. A first and second differential signal may be determined for respective pixels in each image by subtracting opposing pixels from the +1 and ?1 diffraction orders for each of the multiple wavelengths. An OVL for the respective pixels may be determined based on analyzing the differential signals from multiple wavelengths simultaneously. Then an OVL for the pattern may be determined as a weighted average of the OVL of the respective pixels.

Abstract: Scatterometry overlay (SCOL) measurement methods, systems and targets are provided to enable efficient SCOL metrology with in-die targets. Methods comprise generating a signal matrix by: illuminating a SCOL target at multiple values of at least one illumination parameter, and at multiple spot locations on the target, wherein the illumination is at a NA (numerical aperture) >? yielding a spot diameter <1?, measuring interference signals of zeroth and first diffraction orders, and constructing the signal matrix from the measured signals with respect to the illumination parameters and the spot locations on the target; and deriving a target overlay by analyzing the signal matrix. The SCOL targets may be reduced to be a tenth in size with respect to prior art targets, as less and smaller target cells are required, and be easily set in-die to improve the accuracy and fidelity of the metrology measurements.

Abstract: Metrology targets designs, design methods and measurement methods are provided, which reduce noise and enhance measurement accuracy. Disclosed targets comprise an additional periodic structure which is orthogonal to the measurement direction along which given target structures are periodic. For example, in addition to two or more periodic structures along each measurement direction in imaging or scatterometry targets, a third, orthogonal periodic structure may be introduced, which provides additional information in the orthogonal direction, can be used to reduce noise, enhances accuracy and enables the application of machine learning algorithms to further enhance accuracy. Signals may be analyzed slice-wise with respect to the orthogonal periodic structure, which can be integrated in a process compatible manner in both imaging and scatterometry targets.

Abstract: Metrology targets, design files, and design and production methods thereof are provided. The targets comprise two or more parallel periodic structures at respective layers, wherein a predetermined offset is introduced between the periodic structures, for example, opposite offsets at different parts of a target. Quality metrics are designed to estimate the unintentional overlay from measurements of a same metrology parameter by two or more alternative measurement algorithms. Target parameters are configured to enable both imaging and scatterometry measurements and enhance the metrology measurements by the use of both methods on the same targets. Imaging and scatterometry target parts may share elements or have common element dimensions. Imaging and scatterometry target parts may be combined into a single target area or may be integrated into a hybrid target using a specified geometric arrangement.

Abstract: Targets, target elements and target design method are provided, which comprise designing a target structure to have a high contrast above a specific contrast threshold to its background in polarized light while having a low contrast below the specific contrast threshold to its background in non-polarized light. The targets may have details at device feature scale and be compatible with device design rules yet maintain optical contrast when measured with polarized illumination and thus be used effectively as metrology targets. Design variants and respective measurement optical systems are likewise provided.

Abstract: An overlay metrology system includes one or more processors coupled to an illumination source to direct illumination to a sample and a detector to capture diffracted orders of radiation from the sample. The system may generate overlay sensitivity calibration parameters based on differential measurements of a calibration target including two overlay target cells on the sample, where first-layer target elements and second-layer target elements of the overlay target cells are distributed with a common pitch along a measurement direction and are misregistered with a selected offset value in opposite directions. The system may further determine overlay measurements based on differential measurements of additional overlay target cells with two wavelengths, where first-layer target elements and second-layer target elements of the additional overlay target cells are distributed with the common pitch and are formed to overlap symmetrically.

Abstract: A computerized method performed by a processor, and computer program product the method comprising: receiving sensory data of motion by a human subject, the sensory data obtained during motion in an uncontrolled environment; extracting features from the sensory data; identifying a plurality of strides from the features extracted from the sensory data; calculating kinematic parameters of each stride from the plurality of strides from the sensory data; classifying each stride from the plurality of strides in accordance with the kinematic parameters to obtain a stride type; and outputting the stride type for the plurality of strides.

Abstract: A method of determining overlay (“OVL”) in a pattern in a semiconductor wafer manufacturing process comprises capturing images from a cell in a metrology target formed in at least two different layers in the wafer with parts of the target offset in opposing directions with respect to corresponding parts in a different layer. The images may be captured using radiation of multiple different wavelengths, each image including +1 and ?1 diffraction patterns. A first and second differential signal may be determined for respective pixels in each image by subtracting opposing pixels from the +1 and ?1 diffraction orders for each of the multiple wavelengths. An OVL for the respective pixels may be determined based on analyzing the differential signals from multiple wavelengths simultaneously. Then an OVL for the pattern may be determined as a weighted average of the OVL of the respective pixels.

Abstract: Metrology methods and modules are provided, which comprise carrying out recipe setup procedure(s) and/or metrology measurement(s) using zonal analysis with respect to respective setup parameter(s) and/or metrology metric(s). The zonal analysis comprises relating to spatially variable values of the setup parameter(s) and/or metrology metric(s) across one or more wafers in one or more lots. Wafer zones may be discrete or spatially continuous, and be used to weight one or more parameter(s) and/or metric(s) during any of the stages of the respective setup and measurement processes.