Patents by Inventor Erez H. Gershgoren

Erez H. Gershgoren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for photolithographic fabrication with resolution far below the diffraction limit
    Patent number: 8432533
    Abstract: A method and system for photolithography is provided. The system includes a photoresist comprising a photoinitiator and a prepolymer resin. The system further includes a first light source operable to generate at least a first beam of light which is focused on a first area of the photoresist. The first beam of light is configured to excite the photoinitiator. The system further includes a second light source operable to generate at least a second beam of light which is focused on a second area of the photoresist, the second beam of light configured to deactivate at least temporarily the photoinitiator excited by the first beam of light. The first area and second area overlap at least partially. A time difference of at least 10 ns exists between the photoinitiator being excited by the first beam of light and the photoinitiator initiating polymerization.
    Type: Grant
    Filed: January 5, 2010
    Date of Patent: April 30, 2013
    Assignee: Univ. of MD. at College Park
    Inventors: John T. Fourkas, Erez H. Gershgoren, Linjie Li, Hana Hwang
  • METHOD AND SYSTEM FOR PHOTOLITHOGRAPHIC FABRICATION WITH RESOLUTION FAR BELOW THE DIFFRACTION LIMIT
    Publication number: 20110039213
    Abstract: A method and system for photolithography is provided. The system includes a photoresist comprising a photoinitiator and a prepolymer resin. The system further includes a first light source operable to generate at least a first beam of light which is focused on a first area of the photoresist. The first beam of light is configured to excite the photoinitiator. The system further includes a second light source operable to generate at least a second beam of light which is focused on a second area of the photoresist, the second beam of light configured to deactivate at least temporarily the photoinitiator excited by the first beam of light. The first area and second area overlap at least partially. A time difference of at least 10 ns exists between the photoinitiator being excited by the first beam of light and the photoinitiator initiating polymerization.
    Type: Application
    Filed: January 5, 2010
    Publication date: February 17, 2011
    Inventors: John T. FOURKAS, Erez H. Gershgoren, Linjie LI, Hana Hwang