Abstract: A pseudo Single Level Cell (pSLC)-scan-based storage device initialization system includes a chassis, a storage subsystem that is housed in the chassis, and a pSLC-scan-based storage device initialization subsystem that is housed in the chassis and coupled to the storage subsystem. The pSLC-scan-based storage device initialization subsystem reads respective subsets of pSLC data from the storage subsystem over a plurality of different read voltage thresholds, and identifies a first read voltage threshold that is included in the plurality of different read voltage thresholds and at which a respective first subset of the pSLC data read from the storage subsystem experienced errors within a predetermined error range.

Abstract: A storage device reclassification system includes a storage device reclassification subsystem coupled to a storage device that has a NAND storage subsystem and that is configured to perform first storage operations associated with a first storage device classification. The storage device reclassification subsystem performs testing operations on the NAND storage subsystem and, based on the testing operations, identifies at least one reduced capability of the NAND storage subsystem. Based on the at least one reduced capability of the NAND storage subsystem, the storage device reclassification subsystem determines at least one storage device operation modification and performs the at least one storage device operation modification on the storage device in order to configure the storage device to perform second storage operations that are different than the first storage operations and that are associated with a second storage device classification that is different than the first storage device classification.