Abstract: A semiconductor structure having one or a plurality of lateral, high-blocking semiconductor components in a semiconductor of a metalized substrate (2), a dielectric layer (3) contiguous to the substrate, a homogeneously doped drift zone (4) disposed above the dielectric layer, and having heavily-doped zones of the semiconductor components which are formed in or extend into the drift zone and are electrically contacted. At least the zones (5, 6) of the semiconductor components, which can have a high potential difference with respect to the substrate during operational functioning mode of the semiconductor components, extend up to the dielectric layer (3).