Abstract: A film-forming method for forming a film in a film-forming apparatus includes generating first gas molecular species and second gas molecular species by causing the first source gas and the second source gas accumulated in the accumulation mechanisms to pass through respective instantaneously-heating units, sharply raising partial pressure of the first gas molecular species and partial pressure of the second gas molecular species by projectingly supplying the first gas molecular species and the second gas molecular species to the reaction chamber in which the substrate has been placed, which has been depressurized, and which has a constant capacity; bringing the first gas molecular species or the second gas molecular species into reaction by alternately repeatedly guiding the first gas molecular species or the second gas molecular species to a surface of the substrate, and forming a compound film on the surface of the substrate.

Abstract: Source gases are instantaneously heated, at least two kinds of generated gas molecular species generated by instantaneously heating the source gases are independently introduced and brought into contact with a substrate having a temperature lower than heating temperature of the instantaneously-heating mechanism for source gas to form a first compound film and to form a second compound film containing at least one element of elements contained in the first compound film, and a multilayer film composed of at least the first compound film and the second compound film is produced.

Abstract: A film-forming method for forming a film in a film-forming apparatus includes generating first gas molecular species and second gas molecular species by causing the first source gas and the second source gas accumulated in the accumulation mechanisms to pass through respective instantaneously-heating units, sharply raising partial pressure of the first gas molecular species and partial pressure of the second gas molecular species by projectingly supplying the first gas molecular species and the second gas molecular species to the reaction chamber in which the substrate has been placed, which has been depressurized, and which has a constant capacity; bringing the first gas molecular species or the second gas molecular species into reaction by alternately repeatedly guiding the first gas molecular species or the second gas molecular species to a surface of the substrate, and forming a compound film on the surface of the substrate.

Abstract: Source gases are instantaneously heated, at least two kinds of generated gas molecular species generated by instantaneously heating the source gases are independently introduced and brought into contact with a substrate having a temperature lower than heating temperature of the instantaneously-heating mechanism for source gas to form a first compound film and to form a second compound film containing at least one element of elements contained in the first compound film, and a multilayer film composed of at least the first compound film and the second compound film is produced.

Abstract: A water supply apparatus and a method thereof have a high capability of peeling-off and removing unnecessary objects such as a resist film, and parameters for setting efficient water supply conditions. The water supply apparatus and the method are designed to supply water for cleaning, peeling-off, or treating a target article. On a surface of the target article to be processed, a nozzle device is provided for spraying a mixture of water vapor and water mist. At least the following parameters are respectively set as water supply conditions to proper values so as to supply water to the target article, and these parameters include (1) a weight ratio of water vapor to water mist on the surface to be processed, (2) a temperature of the surface to be processed, and (3) a distance between a (water) blowing port of the nozzle device and the surface to be processed.