Abstract: A movable portion of a substrate carrier handler is extended into a transport path along which a substrate carrier transport system transports a substrate carrier, respective kinematic coupling events are detected between corresponding interface elements of the movable portion and the substrate carrier, respective signals are generated in response thereto, and an alignment offset between the substrate carrier and the substrate carrier transport system is determined based on the signals. A movable portion matches an elevation, position, and/or a speed/velocity of a substrate carrier moving along the transport path. Sensors for detecting kinematic coupling and generating signals in response thereto are provided on the movable portion. An end effector includes a support with interface elements and sensors for detecting kinematic coupling and generating respective signals.

Abstract: A break-away mounting system for a continuous-motion, high-speed position conveyor system is disclosed. A support cradle may be suspended from a conveyor belt such that the support cradle maintains a fixed position and orientation relative to at least one point on the conveyor belt without inducing appreciable stress on the conveyor belt, the support cradle, or the coupling between the conveyor belt and the support cradle. The mount may include a leading rotatable bearing attached to the support cradle which may releasably engage a first key attached to the conveyor belt, the rotatable bearing adapted to accommodate rotational forces applied to the support cradle by the conveyor belt. The mount may also include a slide bearing attached to the support cradle which may releasably engage a second key attached to the conveyor belt, the slide bearing adapted to accommodate longitudinal forces applied to the support cradle by the conveyor belt.

Abstract: A substrate carrier is counterbalanced so that the center of gravity of the carrier is aligned with the center of gravity of any substrates that the carrier may hold. In some embodiments, substrate supports disposed within the carrier are adapted to hold substrates such that the center of gravity of the substrates are aligned with the center of gravity of the carrier. A flange may be coupled to the carrier so as to provide a means to apply a net lifting or support force to the carrier that is aligned with the center of gravity of the carrier.

Abstract: A substrate loading station includes a load/unload mechanism which unloads substrates or substrate carriers from a conveyor and loads substrates or substrate carriers onto the conveyor. The load/unload mechanism includes a rotary arm that rotates to match the speed of the conveyor to lift a substrate or substrate carrier off the conveyor or to lower a substrate or substrate carrier into engagement with the conveyor.

Abstract: In a first aspect, a first apparatus is provided for use in supporting a substrate carrier. The first apparatus includes an overhead transfer flange adapted to couple to a substrate carrier body and an overhead carrier support. The overhead transfer flange has a first side and a second side opposite the first side that is wider than the first side. Numerous other aspects are provided.

Abstract: According to a first aspect, a first conveyor system is provided that is adapted to deliver substrate carriers within a semiconductor device manufacturing facility. The first conveyor system includes a ribbon that forms a closed loop along at least a portion of the semiconductor device manufacturing facility. The ribbon is adapted to (1) be flexible in a horizontal plane and rigid in a vertical plane; and (2) transport a plurality of substrate carriers within at least a portion of the semiconductor device manufacturing facility. Numerous other aspects are provided, as are systems, methods and computer program products in accordance with these and other aspects.

Abstract: In a first aspect, a method of managing work in progress within a small lot size semiconductor device manufacturing facility is provided. The first method includes providing a small lot size semiconductor device manufacturing facility having (1) a plurality of processing tools; and (2) a high speed transport system adapted to transport small lot size substrate carriers among the processing tools. The method further includes maintaining a predetermined work in progress level within the small lot size semiconductor device manufacturing facility by (1) increasing an average cycle time of low priority substrates within the small lot size semiconductor device manufacturing facility; and (2) decreasing an average cycle time of high priority substrates within the small lot size semiconductor device manufacturing facility so as to approximately maintain the predetermined work in progress level within the small lot size semiconductor device manufacturing facility. Numerous other aspects are provided.

Abstract: A pod loading station includes a docking mechanism adapted to move a pod between a docked position and an undocked position, and a door opener adapted to unlatch and open a pod door from the pod. A controller is coupled to the docking mechanism and the door opener and is programmed to cause the pod to move from the docked position to the undocked position, and then to cause the pod to move back to the docked position so that it can be determined whether the pod door is properly closed prior to completing the removal of the pod from the pod loading station.

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber.

Abstract: In a first aspect, an automatic door opener is provided that includes (1) a platform adapted to support a substrate carrier; (2) a door opening mechanism adapted to open a door of the substrate carrier while the substrate carrier is supported by the platform; and (3) a tunnel. The tunnel is adapted to extend from an opening in a clean room wall toward the platform and at least partially surround the platform. The tunnel is further adapted to direct a flow of air from the clean room wall toward the platform and out of the tunnel. Numerous other aspects are provided.

Abstract: In one aspect, a substrate loading station for a processing tool includes plural load ports. Each load port is operatively coupled to the processing tool and has a mechanism for opening a substrate carrier. A carrier handler transports substrate carriers from a factory exchange location to the load ports without placing the carriers on any carrier support location other than the load ports. Numerous other aspects are provided.

Abstract: In a semiconductor fabrication facility, a conveyor transports substrate carriers. The substrate carriers are unloaded from the conveyor and loaded onto the conveyor without stopping the conveyor. A load and/or unload mechanism lifts the substrate carriers from the conveyor during unloading operations, while matching the horizontal speed of the conveyor. Similarly, during loading operations, the load/unload mechanism lowers a substrate carrier into engagement with the conveyor while matching the horizontal speed of the conveyor. Individual substrates, without carriers, may be similarly loaded and/or unloaded from a conveyor.

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber.

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber.

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is formed on the wafer, while the wafer is in the processing chamber. Next, the layer of material is oxidized, while the wafer is in the processing chamber. A semiconductor wafer processing chamber for carrying out such a construction in-situ may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

Abstract: A substrate processing apparatus for processing a substrate having a peripheral edge, an upper surface for processing and a lower surface lying on a support. The apparatus includes a processing chamber which houses the substrate support, in the form of a heater pedestal including a substrate receiving surface for receiving the lower surface of the substrate. A circumscribing shadow ring is located around the pedestal to cover peripheral edge portion of the substrate. The shadow ring also defines a cavity, between itself and the pedestal, at the peripheral edge of the substrate. In operation, the chamber receives processing gas at a first pressure and purge gas is introduced into the cavity, between the ring and the pedestal, at a second pressure which is greater than the first pressure. Fluid conduits are provided to enhance the flow of the purge gas away from the peripheral edge of the substrate.