Patents by Inventor Eric A. Powell

Eric A. Powell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby
    Patent number: 5040046
    Abstract: A process for forming silicon dioxide, SiO.sub.2, or silicon nitride, Si.sub.3 N.sub.4, layers on selected substrates which includes reacting diethylsilane, C.sub.4 H.sub.12 Si, with a selected oxygen-containing compound or nitrogen-containing compound in a plasma enhanced chemical vapor deposition (PECVD) chamber. The conformality of the coatings thus formed is in the range of 85% to 98%. The diethylsilane liquid source for the associated gas flow processing system may be maintained and operated at a source temperature as low as room temperature.
    Type: Grant
    Filed: October 9, 1990
    Date of Patent: August 13, 1991
    Assignee: Micron Technology, Inc.
    Inventors: Navjot Chhabra, Eric A. Powell, Rodney D. Morgan
  • Temperature controlled anode for plasma dry etchers for etching semiconductor
    Patent number: 4859304
    Abstract: A plasma dry etch chamber is provided with an anode plate which has a cooling jacket which extends radially outwardly from a cooling core to an extent corresponding to the radial dimension of a silicon wafer work product. In order to further reduce deposit formation, the outer perimeter of the anode is designed to reduce the effects of polymer deposition.
    Type: Grant
    Filed: July 18, 1988
    Date of Patent: August 22, 1989
    Assignee: Micron Technology, Inc.
    Inventors: David A. Cathey, John C. Freeman, James Dale, William J. Crane, Eric A. Powell, Jeffrey V. Musser