Abstract: A light-emitting diode has a first electrode, a second electrode and a light-emitting layer. A receptor layer of an ion receptor has an affinity for ions of a first charge and is positioned between the first electrode and the light-emitting layer. A further layer includes immobile ions of a second charge and is positioned between the second electrode and light-emitting layer. The immobile ions initially have attached counterions of the first charge that move towards the receptor layer upon application of an electric field for capture by the receptor layer. Upon capture of the counterions, a concentration of immobilized ions of the first charge is formed at the first electrode yielding an ion gradient for injection of electrons and holes resulting in emission of light.

Abstract: A light-emitting diode (1) has a first electrode (3), a second electrode (4), a light-emitting layer (5) which comprises a matrix, and ions. A layer (6) of a cation receptor (CR) is positioned adjacent to the first electrode (3), has captured cations, and has generated immobilized cations (+). A layer (7) of an anion receptor (AR) is positioned adjacent to the second electrode (4), has captured anions, and has generated immobilized anions (?). The ion gradients provide for quick response in emission of light (L) when the diode (1) is exposed to a forward bias. A diode (1) is manufactured by first forming a laminate (2) of the above structure. The laminate (2) is exposed to a forward bias to make the ions become immobilized at respective sites (S1, S2) of the respective receptors (CR, AR).

Abstract: The present invention relates to an integrated device (10) comprising at least one active organic element (14, 24, 26), a substrate supporting the at least one active organic element, a prefabricated thin battery (20) coupled to the at least one active organic element, and an encapsulation for sealing the integrated device, wherein one of the substrate and the encapsulation is formed by the prefabricated thin battery. This structure allows for a thin integrated device. The present invention also relates to a method for the manufacturing of such an integrated device.

Abstract: The invention relates to a light-emitting diode comprising an anode, a cathode, a light-emitting layer, and at least one charge transport layer which has a luminescence efficiency which is at least 25% of the luminescence efficiency of the light-emitting layer. This leads to a light-emitting diode with a smaller percentage of catastrophic failures than in existing LEDs, because the charge transport layer takes over the light emission in case of a short-circuit of the light-emitting layer.

Abstract: A light-emitting diode (1) has a first electrode (3), a second electrode (4) and a light-emitting layer (5). A layer (6) of an ion receptor (CR) is positioned between the first electrode (3) and the light-emitting layer (5). Immobile ions of a second charge are positioned between the second electrode (4) and the first electrode (3). The immobile ions initially had counterions of a first charge. The layer (6) has captured the counterions, thereby forming a concentration of immobilized ions at the first electrode (3). The ion gradient provide for injection of electrons (e) and holes (h) resulting in emission of light (L). A diode (1) is manufactured by exposing a laminate (2) of the above structure to a forward bias making the ion receptor (CR) capture the counterions.

Abstract: A light-emitting diode (1) has a first electrode (3), a second electrode (4), a light-emitting layer (5) which comprises a matrix, and ions. A layer (6) of a cation receptor (CR) is positioned adjacent to the first electrode (3), has captured cations, and has generated immobilized cations (+). A layer (7) of an anion receptor (AR) is positioned adjacent to the second electrode (4), has captured anions, and has generated immobilized anions (?). The ion gradients provide for quick response in emission of light (L) when the diode (1) is exposed to a forward bias. A diode (1) is manufactured by first forming a laminate (2) of the above structure. The laminate (2) is exposed to a forward bias to make the ions become immobilized at respective sites (S1, S2) of the respective receptors (CR, AR).

Abstract: An organic light emitting diode device being patterned into a plurality of independently addressable domains (11, 12) is disclosed. The light emitting layer (4) is of a first thickness (41) in a first domain (11) of the device and of a second thickness (42) in a second domain (12) of the device, such that when a voltage, that is sufficient to cause light to emit from said first domain (11) and said second domain (12), is applied over said light emitting layer (4), light of a first color point is emitted by said first domain (11) of said device and light of a second color point is emitted by said second domain (12) of said device.

Abstract: A light emitting device comprising a substrate (1) supporting a plurality of layers (2, 3, 5), of which two sandwich a light emitting layer (4), said device being patterned into a plurality of independently addressable domains (11, 12) is disclosed. At least one of said layers (2, 3, 5) is of a first thickness in said first domain and of a second thickness in said second domain, such that when a voltage, that is sufficient to cause light to emit from said light emitting layer (4), is applied over said light emitting layer, light of a first color point is emitted by said first domain (11) of said device and light of a second color point is emitted by said second domain (12) of said device.

Abstract: The invention provides for a back-end metallisation process in which a recess is filled with copper and which includes the step of forming a plating base on the surfaces of the recess for the subsequent galvanic deposition of the said copper, and wherein subsequent to the formation of the plating base, but prior to the galvanic deposition of the copper, a modifying agent is introduced to the recess and which serves to absorb in the surface regions not covered by the plating base and to thereby modify the surface to promote copper growth thereon so as to effectively repair the initial plating base before the copper plating fill commences.

Abstract: The invention provides for a back-end metallisation process in which a recess is filled with copper and which includes the step of forming a plating base on the surfaces of the recess for the subsequent galvanic deposition of the said copper, and wherein subsequent to the formation of the plating base, but prior to the galvanic deposition of the copper, a modifying agent is introduced to the recess and which serves to absorb in the surface regions not covered by the plating base and to thereby modify the surface to promote copper growth thereon so as to effectively repair the initial plating base before the copper plating fill commences.