Abstract: In a method of etching a silicon wafer in a controllable cost-effective manner with minimal chemical consumption, ozone gas and HF vapor are delivered into a process chamber to react with a silicon surface of the wafer. The ozone and HF vapor may be delivered sequentially, or may be mixed together before entering the process chamber. The ozone oxidizes the silicon surface of the wafer, while the HF vapor etches away the oxidized silicon. In alternative embodiments, HF may be delivered into the process chamber as an anhydrous gas or in aqueous form.

Abstract: Photoresist is quickly removed from a wafer using a process liquid including water, ozone and a photoresist penetrating additive, such as ammonium hydroxide. The penetrating additive creates cracks in the photoresist layer. The process liquid moves through the cracks and etches away the underlying adhesion layer. The photoresist layer is then released from the wafer. Pieces or particles of the photoresist are lifted off of the workpiece and carried away in a flow of the liquid.

Abstract: Contaminants such as photoresist are quickly removed from a wafer having metal features, using water, ozone and a base such as ammonium hydroxide. Processing is performed at room temperature to avoid metal corrosion. Ozone is delivered into a stream of process liquid or into the process environment or chamber. Steam may alternatively be used. A layer of liquid or vapor forms on the wafer surface. The ozone moves through the liquid layer via diffusion, entrainment, jetting/spraying or bulk transfer, and chemically reacts with the photoresist, to remove it.

Abstract: A novel chemistry, system and application technique reduces contamination of semiconductor wafers and similar substrates and enhances and expedites processing. A stream of liquid chemical is applied to the workpiece surface. Ozone is delivered either into the liquid process stream or into the process environment. The ozone is preferably generated by a high capacity ozone generator. The chemical stream is provided in the form of a liquid or vapor. A boundary layer of liquid or vapor forms on the workpiece surface. The thickness of the boundary layer is controlled. The chemical stream may include ammonium hydroxide for simultaneous particle and organic removal, another chemical to raise the pH of the solution, or other chemical additives designed to accomplish one or more specific cleaning steps.

Abstract: In a process for removing an anti-reflective coating, a workpiece such as a semiconductor wafer is placed in a support in a process chamber. A heated liquid including a halogenated additive is applied onto the workpiece, forming a liquid layer on the workpiece. The thickness of the liquid layer is controlled. Ozone is introduced into the process chamber by injection into the liquid or directly into the process chamber. Ozone oxidizes and removes the film on the workpiece. The methods are especially useful for anti-reflective coating or sacrificial light absorbing layers.

Abstract: In a system for cleaning a workpiece or wafer, a boundary layer of heated liquid is formed on the workpiece surface. Ozone is provided around the workpiece. The ozone diffuses through the boundary layer and chemically reacts with contaminants on the workpiece surface. Preferably, the liquid includes water, and may also include a chemical. Steam may also be used with the steam also physically removing contaminants, and also heating the workpiece to speed up chemical cleaning. Sonic or electromagnetic energy may also be introduced to the workpiece.

Abstract: A system for processing a workpiece includes an inner chamber pivotably supported within an outer chamber. The inner chamber has an opening to allow liquid to drain out. A motor pivots the inner chamber to bring the opening at or below the level of liquid in the inner chamber. As the inner chamber turns, liquid drains out. Workpieces within the inner chamber are supported on a holder or a rotor, which may be fixed or rotating. Multi processes may be performed within the inner chamber, reducing the need to move the workpieces between various apparatus and reducing risk of contamination.

Abstract: A system for processing a workpiece includes an inner chamber pivotably supported within an outer chamber. The inner chamber has an opening to allow liquid to drain out. A motor pivots the inner chamber to bring the opening at or below the level of liquid in the inner chamber. As the inner chamber turns, liquid drains out. Workpieces within the inner chamber are supported on a holder or a rotor, which may be fixed or rotating. Multi processes may be performed within the inner chamber, reducing the need to move the workpieces between various apparatus and reducing risk of contamination.

Abstract: Workpieces requiring low levels of contamination, such as semiconductor wafers, are loaded into a rotor within a process chamber. The process chamber has a horizontal drain opening in its cylindrical wall. The chamber is closed via a door. A process or rinsing liquid is introduced into the chamber. The liquid rises to a level so that the workpieces are immersed in the liquid. The chamber slowly pivots or rotates to move the drain opening down to the level of the liquid. The liquid drains out through the drain opening. The drain opening is kept near the surface of the liquid to drain off liquid at a uniform rate. An organic solvent vapor is introduced above the liquid to help prevent droplets of liquid from remaining on the workpieces as the liquid drains off. The rotor spins the workpieces to help to remove any remaining droplets by centrifugal force.

Abstract: A system for processing a workpiece includes an inner chamber pivotably supported within an outer chamber. The inner chamber has an opening to allow liquid to drain out. A motor pivots the inner chamber to bring the opening at or below the level of liquid in the inner chamber. As the inner chamber turns, liquid drains out. Workpieces within the inner chamber are supported on a holder or a rotor, which may be fixed or rotating. Multi processes may be performed within the inner chamber, reducing the need to move the workpieces between various apparatus and reducing risk of contamination.

Abstract: Workpieces requiring low levels of contamination, such as semiconductor wafers, are loaded into a rotor within a process chamber. The process chamber has a horizontal drain opening in its cylindrical wall. The chamber is closed via a door. A process or rinsing liquid is introduced into the chamber. The liquid rises to a level so that the workpieces are immersed in the liquid. The chamber slowly pivots or rotates to move the drain opening down to the level of the liquid. The liquid drains out through the drain opening. The drain opening is kept near the surface of the liquid to drain off liquid at a uniform rate. An organic solvent vapor is introduced above the liquid to help prevent droplets of liquid from remaining on the workpieces as the liquid drains off. The rotor spins the workpieces to help to remove any remaining droplets by centrifugal force.

Abstract: In a system for cleaning a workpiece or wafer, a boundary layer of heated liquid is formed on the workpiece surface. Ozone is provided around the workpiece. The ozone diffuses through the boundary layer and chemically reacts with contaminants on the workpiece surface. A jet of high velocity heated liquid is directed against the workpiece, to physically dislodge or remove a contaminant from the workpiece. The jet penetrates through the boundary layer at the point of impact. The boundary layer otherwise remains largely undisturbed. Preferably, the liquid includes water, and may also include a chemical. Steam may also be jetted onto the workpiece, with the steam also physically removing contaminants, and also heating the workpiece to speed up chemical cleaning. The workpiece and the jet of liquid are moved relative to each other, so that substantially all areas of the workpiece surface facing the jet are exposed at least momentarily to the jet.

Abstract: Workpieces requiring low levels of contamination, such as semiconductor wafers, are loaded into a workpiece support or holder within a process chamber. The process chamber has a drain opening, slot or edge. The chamber is closed via a door. A process or rinsing liquid is introduced into the chamber. The liquid rises to a level so that the workpieces are immersed in the liquid. The chamber slowly pivots or rotates to move the drain opening down to the level of the liquid. The liquid drains out through the drain opening. The drain opening is kept near the surface of the liquid to drain off liquid at a uniform rate. An organic solvent vapor is introduced above the liquid to reduce or prevent droplets of liquid from remaining on the workpieces as the liquid drains off. An outer chamber may be provided around the process chamber to provide increased control of the process environment.

Abstract: An apparatus for processing a semi-conductor wafer or similar workpiece has one or more liquid outlets for applying a heated process liquid to the wafer within a process chamber. Ozone gas is provided into the chamber directly, or via the processed liquid. Sonic energy is introduced to the workpiece through a layer of liquid. In an alternative design, the wafers are immersed in heated process liquid, and an ozone atmosphere is provided above the liquid. The wafers are then lifted out of the liquid, or the liquid is alternatively drained off. The ozone gas/liquid interface passes down across the surfaces of the wafers.

Abstract: The invention is a method and apparatus for navigating displayed screen elements. In accordance an embodiment of the invention, the method comprises the steps of generating a reference anchor, accepting a navigation input from a user, and determining a next displayed element to be selected based on the user-entered navigation input and the positions of the displayed elements to the reference anchor.