Abstract: The invention provides circuits and systems for programming a floating gate. A floating gate tunneling device is used with an analog comparing device in a circuit having a floating reference node and an offset-mitigating feedback loop for iteratively programming a floating gate, or multiple floating gates.

Abstract: The invention provides methods and systems for the application and reading of micro markings for coding of information for placement on the surfaces of individual very small devices. In preferred embodiments, a two dimensional micro matrix of markings or dots is realized on a scale of a 25 um cell size and smaller.

Abstract: The invention provides circuits, systems, and methods for programming a floating gate. A floating gate tunneling device is used with an analog comparing device in a circuit having a floating reference node and an offset-mitigating feedback loop for iteratively programming a floating gate, or multiple floating gates.

Abstract: A method evaluating threshold of a data cell in a memory device including a programming locus coupled with the data cell for receiving a programming signal setting a stored signal level in the data cell and responding to a read signal to indicate the stored signal at a read locus; includes the steps of: (a) in no particular order; (1) selecting a test threshold signal; and (2) setting a read signal at a non-read level; (b) applying the test threshold signal to the programming locus; (c) cycling the read signal between a read level and a non-read level while applying the test threshold signal to the programming locus to present at least two test signals at the read locus when the read signal is at the read level; and (d) while cycling, observing whether the at least two test signals manifest a difference greater than a predetermined amount.

Abstract: A method evaluating threshold of a data cell in a memory device including a programming locus coupled with the data cell for receiving a programming signal setting a stored signal level in the data cell and responding to a read signal to indicate the stored signal at a read locus; includes the steps of: (a) in no particular order: (1) selecting a test threshold signal; and (2) setting a read signal at a non-read level; (b) applying the test threshold signal to the programming locus; (c) cycling the read signal between a read level and a non-read level while applying the test threshold signal to the programming locus to present at least two test signals at the read locus when the read signal is at the read level; and (d) while cycling, observing whether the at least two test signals manifest a difference greater than a predetermined amount.

Abstract: A method evaluating threshold of a data cell in a memory device including a programming locus coupled with the data cell for receiving a programming signal setting a stored signal level in the data cell and responding to a read signal to indicate the stored signal at a read locus; includes the steps of: (a) in no particular order: (1) selecting a test threshold signal; and (2) setting a read signal at a non-read level; (b) applying the test threshold signal to the programming locus; (c) cycling the read signal between a read level and a non-read level while applying the test threshold signal to the programming locus to present at least two test signals at the read locus when the read signal is at the read level; and (d) while cycling, observing whether the at least two test signals manifest a difference greater than a predetermined amount.

Abstract: A method evaluating threshold of a data cell in a memory device including a programming locus coupled with the data cell for receiving a programming signal setting a stored signal level in the data cell and responding to a read signal to indicate the stored signal at a read locus; includes the steps of: (a) in no particular order: (1) selecting a test threshold signal; and (2) setting a read signal at a non-read level; (b) applying the test threshold signal to the programming locus; (c) cycling the read signal between a read level and a non-read level while applying the test threshold signal to the programming locus to present at least two test signals at the read locus when the read signal is at the read level; and (d) while cycling, observing whether the at least two test signals manifest a difference greater than a predetermined amount.

Abstract: An apparatus includes a blocking N-channel MOS (LDMOS) transistor that prevents current flow when the supply connection is reversed. When connected properly, the body diode conducts to provide a start-up function. A bias generator is employed to enable the low drop-out voltage function, allowing the output voltage to be very close to supply.

Abstract: An apparatus includes a blocking N-channel MOS (LDMOS) transistor that prevents current flow when the supply connection is reversed. When connected properly, the body diode conducts to provide a start-up function. A bias generator is employed to enable the low drop-out voltage function, allowing the output voltage to be very close to supply.

Abstract: The present invention is directed to MEMS-based accelerometer comprising semiconductor substrate and a generally hollow shell having an open end and a closed end, wherein the open end of the shell is generally bonded to the top surface of the substrate. The shell comprises a plurality of capacitor plates electrically connected to a respective plurality of capacitor electrodes associated with the shell, wherein the shell further comprises a common electrode, and wherein the plurality of capacitor electrodes and the common electrode are electrically connected to the substrate via the bonding of the open end of the shell to the substrate. The accelerometer further comprises a sensing element comprising an electrically conductive torsion bar coupled to the shell, defining an axis of rotation.

Abstract: A system and method for driving a load at a desired operating level. A driver is connected to a load. The load can be selected from a plurality of loads by a selection system, such as a multiplexer, or a single load can be utilized. Feedback from the load is provided to the driver for achieving the desired operating level. A zero temperature coefficient resistance formed by two resistors having different resistances can be used so that the driver emulates an ideal resistor having a substantially zero temperature coefficient, providing a temperature independent current to the load.