Abstract: A method of and an apparatus for electrically interconnecting two integrated circuits devices includes mounting the two devices face to face. A first device is mounted for example to a substrate or lead frame. The first device includes a plurality of electrical/physical mounting structures preferably positioned along one edge. The mounting structure provide both electrical interconnection and physical mounting. A second device includes a corresponding plurality of mounting structures configured as a mirror image of the mounting structures on the first device. The mounting structures on the second device are also positioned along one of its edges so that once the mounting structures are brought together in a face to face relationship, the second device cantilevers off the edge of the first device. Under certain circumstances, a dummy block can be mounted to the substrate adjacent to the first device to act as a strut or support for the second device.

Abstract: A method of and an apparatus for electrically interconnecting two integrated circuits devices includes mounting the two devices face to face. A first device is mounted for example to a substrate or lead frame. The first device includes a plurality of electrical/physical mounting structures preferably positioned along one edge. The mounting structure provide both electrical interconnection and physical mounting. A second device includes a corresponding plurality of mounting structures configured as a mirror image of the mounting structures on the first device. The mounting structures on the second device are also positioned along one of its edges so that once the mounting structures are brought together in a face to face relationship, the second device cantilevers off the edge of the first device. Under certain circumstances, a dummy block can be mounted to the substrate adjacent to the first device to act as a strut or support for the second device.

Abstract: Switching noise at integrated circuit V.sub.DD and V.sub.SS metal traces is reduced by minimizing lead inductance in on-chip bypass capacitors. For each on-chip bypass capacitor, a pair of V.sub.DD -carrying and V.sub.SS -carrying metal traces is formed, these traces having regions spaced-apart laterally a distance .DELTA.X corresponding to lateral separation of the bypass capacitor connecting pads. For each bypass capacitor, column-shaped openings, spaced-apart distance .DELTA.X, are formed through the passivation and inter-metal oxide layers, as needed. These openings expose and access regions of the pair of spaced-apart metal traces carrying V.sub.SS and V.sub.DD. These openings, which may be formed after the IC has been fabricated, preferably are formed using focussed ion beam technology ("FIB"). Alternatively, these openings may be formed using masking and etching steps. The column-shaped openings are then made into conductive columnar elements, preferably using FIB deposition of tungsten or platinum.

Abstract: Switching noise at integrated circuit V.sub.DD and V.sub.SS metal traces is reduced by minimizing lead inductance in on-chip bypass capacitors. For each on-chip bypass capacitor, a pair of V.sub.DD -carrying and V.sub.SS -carrying metal traces is formed, these traces having regions spaced-apart laterally a distance .DELTA.X corresponding to lateral separation of the bypass capacitor connecting pads. For each bypass capacitor, column-shaped openings, spaced-apart distance .DELTA.X, are formed through the passivation and inter-metal oxide layers, as needed. These openings expose and access regions of the pair of spaced-apart metal traces carrying V.sub.SS and V.sub.DD. These openings, which may be formed after the IC has been fabricated, preferably are formed using focussed ion beam technology ("FIB"). Alternatively, these openings may be formed using masking and etching steps. The column-shaped openings are then made into conductive columnar elements, preferably using FIB deposition of tungsten or platinum.

Abstract: A sensor board for use with an endpoint controller which monitors light intensity is provided. The sensor board can provide a dynamic range of up to five million because a constant current driver and phase sensitive detector help eliminate noise from the detected signal. The sensor board can also subtract a DC voltage offset from the detected signal and amplify the difference to provide increased resolution of small changes in the detected signal.