Abstract: Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to accurately expose patterns on the substrate. An example method can include receiving a measurement signal including a combined intensity signal corresponding to first and second diffracted light beams diffracted from first and second alignment targets having different orientations. The example method can further include fitting the combined intensity signal using templates to determine weight values and determining, based on the templates and weight values, first and second intensity sub-signals corresponding to the first and second diffracted light beams. The method can further include determining first and second intensity imbalance signals based on the first and second intensity sub-signals and determining a set of corrections to the measurement signal based on the first and second intensity imbalance signals.

Abstract: A method of applying a measurement correction includes calculating a first correction value based on a first coefficient and the measurement; calculating a second correction value based on a second coefficient, greater than the first coefficient, and the measurement; and calculating a third correction value based on a third coefficient, greater than the second coefficient, and the measurement. The method also includes applying the third correction value to the measurement if a difference between the first correction value and the third correction value is above a first threshold value; applying the second correction value to the measurement if a difference between the first correction value and the second correction value is above a second threshold value; and applying the first correction value to the measurement if the difference between the first correction value and the second correction value is below or equal to the second threshold value.

Abstract: A lithographic cluster includes a track unit and a lithographic apparatus. The lithographic apparatus includes an alignment sensor and at least one controller. The track unit is configured to process a first lot and a second lot. The lithographic apparatus is operatively coupled to the track unit. The alignment sensor is configured to measure an alignment of at least one alignment mark type of a calibration wafer. At least one controller is configured to determine a correction set for calibrating the lithographic apparatus based on the measured alignment of the at least one alignment mark type and apply first and second weight corrections to the correction set for processing the first and second lots, respectively, such that overlay drifts or jumps during processing the first and second lots are mitigated.

Abstract: A lithographic cluster includes a track unit and a lithographic apparatus. The lithographic apparatus includes an alignment sensor and at least one controller. The track unit is configured to process a first lot and a second lot. The lithographic apparatus is operatively coupled to the track unit. The alignment sensor is configured to measure an alignment of at least one alignment mark type of a calibration wafer. At least one controller is configured to determine a correction set for calibrating the lithographic apparatus based on the measured alignment of the at least one alignment mark type and apply first and second weight corrections to the correction set for processing the first and second lots, respectively, such that overlay drifts or jumps during processing the first and second lots are mitigated.

Abstract: A method, including printing an apparatus mark onto a structure while the structure is at least partly within a lithographic apparatus. The structure may be part of, or is located on, a substrate table, but is separate from a substrate to be held by the apparatus. The method further includes measuring the apparatus mark using a sensor system within the apparatus.

Abstract: A method of applying a measurement correction includes calculating a first correction value based on a first coefficient and the measurement; calculating a second correction value based on a second coefficient, greater than the first coefficient, and the measurement; and calculating a third correction value based on a third coefficient, greater than the second coefficient, and the measurement. The method also includes applying the third correction value to the measurement if a difference between the first correction value and the third correction value is above a first threshold value; applying the second correction value to the measurement if a difference between the first correction value and the second correction value is above a second threshold value; and applying the first correction value to the measurement if the difference between the first correction value and the second correction value is below or equal to the second threshold value.

Abstract: A method, including printing an apparatus mark onto a structure while the structure is at least partly within a lithographic apparatus. The structure may be part of, or is located on, a substrate table, but is separate from a substrate to be held by the apparatus. The method further includes measuring the apparatus mark using a sensor system within the apparatus.

Abstract: An inspection apparatus includes an illumination system that receives a first beam and produces second and third beams from the first beam and a catadioptric objective that directs the second beam to reflect from a wafer. A first sensor detects a first image created by the reflected second beam. A refractive objective directs the third beam to reflect from the wafer, and a second sensor detects a second image created by the reflected third beam. The first and second images can be used for CD measurements. The second beam can have a spectral range from about 200 nm to about 425 nm, and the third beam can have a spectral range from about 425 nm to about 850 nm. A third sensor may be provide that detects a third image created by the third beam reflected from the wafer. The third image can be used for OV measurements.

Abstract: Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects.

Abstract: A mask inspection system with Fourier filtering and image compare can include a first detector, a dynamic Fourier filter, a controller, and a second detector. The first detector can be located at a Fourier plane of the inspection system and can detect a first portion of patterned light produced by an area of a mask. The dynamic Fourier filter can be controlled by the controller based on the detected first portion of the patterned light. The second detector can detect a second portion of the patterned light produced by the section of the mask and transmitted through the dynamic Fourier filter. Further, the mask inspection system can include a data analysis device to compare the second portion of patterned light with another patterned light. Consequently, the mask inspection system is able to detect any possible defects on the area of the mask more accurately and with higher resolution.

Abstract: Disclosed are systems and methods for time differential reticle inspection. Contamination is detected by, for example, determining a difference between a first signature of at least a portion of a reticle and a second signature, produced subsequent to the first signature, of the portion of the reticle.

Abstract: An inspection apparatus includes an illumination system that receives a first beam and produces second and third beams from the first beam and a catadioptric objective that directs the second beam to reflect from a wafer. A first sensor detects a first image created by the reflected second beam. A refractive objective directs the third beam to reflect from the wafer, and a second sensor detects a second image created by the reflected third beam. The first and second images can be used for CD measurements. The second beam can have a spectral range from about 200 nm to about 425 nm, and the third beam can have a spectral range from about 425 nm to about 850 nm. A third sensor may be provide that detects a third image created by the third beam reflected from the wafer. The third image can be used for OV measurements.

Abstract: Disclosed are apparatuses, methods, and lithographic systems for holographic mask inspection. A holographic mask inspection system (300, 600, 700) includes an illumination source (330), a spatial filter (350), and an image sensor (380). The illumination source being configured to illuminate a radiation beam (331) onto a target portion of a mask (310). The spatial filter (350) being arranged in a Fourier transform pupil plane of an optical system (390, 610, 710), where the spatial filter receives at least a portion of a reflected radiation beam (311) from the target portion of the mask. The optical system being arranged to combine (360, 660, 740) the portion of the reflected radiation beam (311) with a reference radiation beam (361, 331) to generate a combined radiation beam. Further, the image sensor (380) being configured to capture holographic image of the combined radiation beam. The image may contain one or more mask defects.

Abstract: Disclosed are high numerical (NA) catadioptric objectives without a central obscuration, and applications thereof. Such objectives can operate through a wide spectral bandwidth of radiation, including deep ultraviolet (DUV) radiation. Importantly, refractive elements in the catadioptric objectives can be manufactured from a single type of material (such as, for example, CaF2 and/or fused silica). In addition, the elements of such catadioptric objectives are rotationally symmetric about an optical axis. The catadioptric objectives eliminate the central obscuration by (1) using a polarized beamsplitter (which passes radiation of a first polarization and reflects radiation of a second polarization), and/or (2) using one or more folding mirrors to direct off-axis radiation into the pupil of the catadioptric objective. An example catadioptric objective is shown in FIG. 2.

Abstract: Disclosed are systems and methods for time differential reticle inspection. Contamination is detected by, for example, determining a difference between a first signature of at least a portion of a reticle and a second signature, produced subsequent to the first signature, of the portion of the reticle.

Abstract: A method and systems for reticle inspection. The method includes coherently illuminating surfaces of an inspection reticle and a reference reticle, applying a Fourier transform to scattered light from the illuminated surfaces, shifting the phase of the transformed light from the reference reticle such that a phase difference between the transformed light from the inspection reticle and the transformed light from the reference reticle is 180 degrees, combining the transformed light as an image subtraction, applying an inverse Fourier transform to the combined light, and detecting the combined light at a detector. An optical path length difference between two optical paths from the illumination source to the detector is less than a coherence length of the illumination source. The image detected by the detector represents a difference in amplitude and phase distributions of the reticles allowing foreign particles, defects, or the like, to be easily distinguished.

Abstract: A mask inspection system with Fourier filtering and image compare can include a first detector, a dynamic Fourier filter, a controller, and a second detector. The first detector can be located at a Fourier plane of the inspection system and can detect a first portion of patterned light produced by an area of a mask. The dynamic Fourier filter can be controlled by the controller based on the detected first portion of the patterned light. The second detector can detect a second portion of the patterned light produced by the section of the mask and transmitted through the dynamic Fourier filter. Further, the mask inspection system can include a data analysis device to compare the second portion of patterned light with another patterned light. Consequently, the mask inspection system is able to detect any possible defects on the area of the mask more accurately and with higher resolution.

Abstract: Disclosed are high numerical (NA) catadioptric objectives without a central obscuration, and applications thereof. Such objectives can operate through a wide spectral bandwidth of radiation, including deep ultraviolet (DUV) radiation. Importantly, refractive elements in the catadioptric objectives can be manufactured from a single type of material (such as, for example, CaF2 and/or fused silica). In addition, the elements of such catadioptric objectives are rotationally symmetric about an optical axis. The catadioptric objectives eliminate the central obscuration by (1) using a polarized beamsplitter (which passes radiation of a first polarization and reflects radiation of a second polarization), and/or (2) using one or more folding mirrors to direct off-axis radiation into the pupil of the catadioptric objective. An example catadioptric objective is shown in FIG. 2.

Abstract: Disclosed are high numerical (NA) catadioptric objectives without a central obscuration, and applications thereof. Such objectives can operate through a wide spectral bandwidth of radiation, including deep ultraviolet (DUV) radiation. Importantly, refractive elements in the catadioptric objectives can be manufactured from a single type of material (such as, for example, CaF2 and/or fused silica). In addition, the elements of such catadioptric objectives are rotationally symmetric about an optical axis. The catadioptric objectives eliminate the central obscuration by (1) using a polarized beamsplitter (which passes radiation of a first polarization and reflects radiation of a second polarization), and/or (2) using one or more folding mirrors to direct off-axis radiation into the pupil of the catadioptric objective. An example catadioptric objective is shown in FIG. 2.

Abstract: Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects.