Patents by Inventor Eric Brian Catey

Eric Brian Catey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10928738
    Abstract: A method of applying a measurement correction includes calculating a first correction value based on a first coefficient and the measurement; calculating a second correction value based on a second coefficient, greater than the first coefficient, and the measurement; and calculating a third correction value based on a third coefficient, greater than the second coefficient, and the measurement. The method also includes applying the third correction value to the measurement if a difference between the first correction value and the third correction value is above a first threshold value; applying the second correction value to the measurement if a difference between the first correction value and the second correction value is above a second threshold value; and applying the first correction value to the measurement if the difference between the first correction value and the second correction value is below or equal to the second threshold value.
    Type: Grant
    Filed: June 26, 2017
    Date of Patent: February 23, 2021
    Assignee: ASML Holding N.V.
    Inventors: Eric Brian Catey, Igor Matheus Petronella Aarts, Robert Anthony Augelli, Sergey Malyk
  • Patent number: 10895813
    Abstract: A lithographic cluster includes a track unit and a lithographic apparatus. The lithographic apparatus includes an alignment sensor and at least one controller. The track unit is configured to process a first lot and a second lot. The lithographic apparatus is operatively coupled to the track unit. The alignment sensor is configured to measure an alignment of at least one alignment mark type of a calibration wafer. At least one controller is configured to determine a correction set for calibrating the lithographic apparatus based on the measured alignment of the at least one alignment mark type and apply first and second weight corrections to the correction set for processing the first and second lots, respectively, such that overlay drifts or jumps during processing the first and second lots are mitigated.
    Type: Grant
    Filed: October 26, 2018
    Date of Patent: January 19, 2021
    Assignee: ASML Holding N.V.
    Inventors: Irit Tzemah, Eric Brian Catey, John David Connelly
  • Publication number: 20200326640
    Abstract: A lithographic cluster includes a track unit and a lithographic apparatus. The lithographic apparatus includes an alignment sensor and at least one controller. The track unit is configured to process a first lot and a second lot. The lithographic apparatus is operatively coupled to the track unit. The alignment sensor is configured to measure an alignment of at least one alignment mark type of a calibration wafer. At least one controller is configured to determine a correction set for calibrating the lithographic apparatus based on the measured alignment of the at least one alignment mark type and apply first and second weight corrections to the correction set for processing the first and second lots, respectively, such that overlay drifts or jumps during processing the first and second lots are mitigated.
    Type: Application
    Filed: October 26, 2018
    Publication date: October 15, 2020
    Applicant: ASML Holding N.V.
    Inventors: Irit TZEMAH, Eric Brian CATEY, John David CONNELLY
  • Patent number: 10481507
    Abstract: A method, including printing an apparatus mark onto a structure while the structure is at least partly within a lithographic apparatus. The structure may be part of, or is located on, a substrate table, but is separate from a substrate to be held by the apparatus. The method further includes measuring the apparatus mark using a sensor system within the apparatus.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: November 19, 2019
    Assignees: ASML Holding N.V., ASML Netherlands B.V.
    Inventors: Kevin J. Violette, Igor Matheus Petronella Aarts, Haico Victor Kok, Eric Brian Catey
  • Publication number: 20190227443
    Abstract: A method of applying a measurement correction includes calculating a first correction value based on a first coefficient and the measurement; calculating a second correction value based on a second coefficient, greater than the first coefficient, and the measurement; and calculating a third correction value based on a third coefficient, greater than the second coefficient, and the measurement. The method also includes applying the third correction value to the measurement if a difference between the first correction value and the third correction value is above a first threshold value; applying the second correction value to the measurement if a difference between the first correction value and the second correction value is above a second threshold value; and applying the first correction value to the measurement if the difference between the first correction value and the second correction value is below or equal to the second threshold value.
    Type: Application
    Filed: June 26, 2017
    Publication date: July 25, 2019
    Applicant: ASML Holding N.V.
    Inventors: Eric Brian CATEY, Igor Matheus Petronell AARTS, Robert Anthony AUGELLI, Sergey MALYK
  • Publication number: 20190196341
    Abstract: A method, including printing an apparatus mark onto a structure while the structure is at least partly within a lithographic apparatus. The structure may be part of, or is located on, a substrate table, but is separate from a substrate to be held by the apparatus. The method further includes measuring the apparatus mark using a sensor system within the apparatus.
    Type: Application
    Filed: August 18, 2017
    Publication date: June 27, 2019
    Applicants: ASML HOLDING N.V., ASML NETHERLANDS B.V.
    Inventors: Kevin J VIOLETTE, Igor Matheus Petronella AARTS, Haico Victor KOK, Eric Brian CATEY
  • Patent number: 9285687
    Abstract: An inspection apparatus includes an illumination system that receives a first beam and produces second and third beams from the first beam and a catadioptric objective that directs the second beam to reflect from a wafer. A first sensor detects a first image created by the reflected second beam. A refractive objective directs the third beam to reflect from the wafer, and a second sensor detects a second image created by the reflected third beam. The first and second images can be used for CD measurements. The second beam can have a spectral range from about 200 nm to about 425 nm, and the third beam can have a spectral range from about 425 nm to about 850 nm. A third sensor may be provide that detects a third image created by the third beam reflected from the wafer. The third image can be used for OV measurements.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: March 15, 2016
    Assignee: ASML Holding N.V.
    Inventors: Stanislav Y Smirnov, Lev Ryzhikov, Eric Brian Catey, Adel Joobeur, David Heald, Yevgeniy Konstantinovich Shmarev, Richard Jacobs
  • Patent number: 9046754
    Abstract: Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects.
    Type: Grant
    Filed: October 26, 2009
    Date of Patent: June 2, 2015
    Assignee: ASML Holding N.V.
    Inventors: Harry Sewell, Eric Brian Catey, Adel Joobeur, Yevgeniy Konstantinovich Shmarev
  • Patent number: 9041903
    Abstract: A mask inspection system with Fourier filtering and image compare can include a first detector, a dynamic Fourier filter, a controller, and a second detector. The first detector can be located at a Fourier plane of the inspection system and can detect a first portion of patterned light produced by an area of a mask. The dynamic Fourier filter can be controlled by the controller based on the detected first portion of the patterned light. The second detector can detect a second portion of the patterned light produced by the section of the mask and transmitted through the dynamic Fourier filter. Further, the mask inspection system can include a data analysis device to compare the second portion of patterned light with another patterned light. Consequently, the mask inspection system is able to detect any possible defects on the area of the mask more accurately and with higher resolution.
    Type: Grant
    Filed: March 18, 2010
    Date of Patent: May 26, 2015
    Inventors: Michael L. Nelson, Harry Sewell, Eric Brian Catey
  • Patent number: 8623576
    Abstract: Disclosed are systems and methods for time differential reticle inspection. Contamination is detected by, for example, determining a difference between a first signature of at least a portion of a reticle and a second signature, produced subsequent to the first signature, of the portion of the reticle.
    Type: Grant
    Filed: July 16, 2010
    Date of Patent: January 7, 2014
    Assignee: ASML Holding N.V.
    Inventors: Eric Brian Catey, Nora-Jean Harned, Yevgeniy Konstantinovich Shmarev, Robert Albert Tharaldsen, Richard David Jacobs
  • Publication number: 20130083306
    Abstract: An inspection apparatus includes an illumination system that receives a first beam and produces second and third beams from the first beam and a catadioptric objective that directs the second beam to reflect from a wafer. A first sensor detects a first image created by the reflected second beam. A refractive objective directs the third beam to reflect from the wafer, and a second sensor detects a second image created by the reflected third beam. The first and second images can be used for CD measurements. The second beam can have a spectral range from about 200 nm to about 425 nm, and the third beam can have a spectral range from about 425 nm to about 850 nm. A third sensor may be provide that detects a third image created by the third beam reflected from the wafer. The third image can be used for OV measurements.
    Type: Application
    Filed: September 10, 2012
    Publication date: April 4, 2013
    Applicant: ASML Holding N. V.
    Inventors: Stanislav Y. Smirnov, Lev Ryzhikov, Eric Brian Catey, Adel Joobeur, David Heald, Yevgeniy Konstantinovich Shmarev, Richard Jacobs
  • Publication number: 20120281197
    Abstract: Disclosed are apparatuses, methods, and lithographic systems for holographic mask inspection. A holographic mask inspection system (300, 600, 700) includes an illumination source (330), a spatial filter (350), and an image sensor (380). The illumination source being configured to illuminate a radiation beam (331) onto a target portion of a mask (310). The spatial filter (350) being arranged in a Fourier transform pupil plane of an optical system (390, 610, 710), where the spatial filter receives at least a portion of a reflected radiation beam (311) from the target portion of the mask. The optical system being arranged to combine (360, 660, 740) the portion of the reflected radiation beam (311) with a reference radiation beam (361, 331) to generate a combined radiation beam. Further, the image sensor (380) being configured to capture holographic image of the combined radiation beam. The image may contain one or more mask defects.
    Type: Application
    Filed: November 12, 2010
    Publication date: November 8, 2012
    Applicants: ASML NETHERLANDS B.V., ASML HOLDINGS N.V.
    Inventors: Robert Albert Tharaldsen, Arie Jeffrey Den Boef, Eric Brian Catey, Yevgeniy Konstantinovich Shmarev, Richard David Jacobs
  • Patent number: 8259398
    Abstract: Disclosed are high numerical (NA) catadioptric objectives without a central obscuration, and applications thereof. Such objectives can operate through a wide spectral bandwidth of radiation, including deep ultraviolet (DUV) radiation. Importantly, refractive elements in the catadioptric objectives can be manufactured from a single type of material (such as, for example, CaF2 and/or fused silica). In addition, the elements of such catadioptric objectives are rotationally symmetric about an optical axis. The catadioptric objectives eliminate the central obscuration by (1) using a polarized beamsplitter (which passes radiation of a first polarization and reflects radiation of a second polarization), and/or (2) using one or more folding mirrors to direct off-axis radiation into the pupil of the catadioptric objective. An example catadioptric objective is shown in FIG. 2.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: September 4, 2012
    Assignee: ASML Holding N.V.
    Inventors: Stanislav Y. Smirnov, Eric Brian Catey, Adel Joobeur
  • Publication number: 20120171600
    Abstract: Disclosed are systems and methods for time differential reticle inspection. Contamination is detected by, for example, determining a difference between a first signature of at least a portion of a reticle and a second signature, produced subsequent to the first signature, of the portion of the reticle.
    Type: Application
    Filed: July 16, 2010
    Publication date: July 5, 2012
    Applicant: ASML Holding N.V.
    Inventors: Eric Brian Catey, Nora-Jean Harned, Yevgeniy Konstantinovich Shmarev, Robert Albert Tharaldsen, Richard David Jacobs
  • Patent number: 8189203
    Abstract: A method and systems for reticle inspection. The method includes coherently illuminating surfaces of an inspection reticle and a reference reticle, applying a Fourier transform to scattered light from the illuminated surfaces, shifting the phase of the transformed light from the reference reticle such that a phase difference between the transformed light from the inspection reticle and the transformed light from the reference reticle is 180 degrees, combining the transformed light as an image subtraction, applying an inverse Fourier transform to the combined light, and detecting the combined light at a detector. An optical path length difference between two optical paths from the illumination source to the detector is less than a coherence length of the illumination source. The image detected by the detector represents a difference in amplitude and phase distributions of the reticles allowing foreign particles, defects, or the like, to be easily distinguished.
    Type: Grant
    Filed: October 5, 2009
    Date of Patent: May 29, 2012
    Assignee: ASML Holding N.V.
    Inventors: Yevgeniy Konstantinovich Shmarev, Eric Brian Catey, Robert Albert Tharaldsen, Richard David Jacobs
  • Publication number: 20120075606
    Abstract: A mask inspection system with Fourier filtering and image compare can include a first detector, a dynamic Fourier filter, a controller, and a second detector. The first detector can be located at a Fourier plane of the inspection system and can detect a first portion of patterned light produced by an area of a mask. The dynamic Fourier filter can be controlled by the controller based on the detected first portion of the patterned light. The second detector can detect a second portion of the patterned light produced by the section of the mask and transmitted through the dynamic Fourier filter. Further, the mask inspection system can include a data analysis device to compare the second portion of patterned light with another patterned light. Consequently, the mask inspection system is able to detect any possible defects on the area of the mask more accurately and with higher resolution.
    Type: Application
    Filed: March 18, 2010
    Publication date: March 29, 2012
    Inventors: Michael L. Nelson, Harry Sewell, Eric Brian Catey
  • Publication number: 20120026607
    Abstract: Disclosed are high numerical (NA) catadioptric objectives without a central obscuration, and applications thereof. Such objectives can operate through a wide spectral bandwidth of radiation, including deep ultraviolet (DUV) radiation. Importantly, refractive elements in the catadioptric objectives can be manufactured from a single type of material (such as, for example, CaF2 and/or fused silica). In addition, the elements of such catadioptric objectives are rotationally symmetric about an optical axis. The catadioptric objectives eliminate the central obscuration by (1) using a polarized beamsplitter (which passes radiation of a first polarization and reflects radiation of a second polarization), and/or (2) using one or more folding mirrors to direct off-axis radiation into the pupil of the catadioptric objective. An example catadioptric objective is shown in FIG. 2.
    Type: Application
    Filed: October 6, 2011
    Publication date: February 2, 2012
    Applicant: ASML Holding N.V.
    Inventors: Stanislav Y. SMIRNOV, Eric Brian CATEY, Adel JOOBEUR
  • Patent number: 8064148
    Abstract: Disclosed are high numerical (NA) catadioptric objectives without a central obscuration, and applications thereof. Such objectives can operate through a wide spectral bandwidth of radiation, including deep ultraviolet (DUV) radiation. Importantly, refractive elements in the catadioptric objectives can be manufactured from a single type of material (such as, for example, CaF2 and/or fused silica). In addition, the elements of such catadioptric objectives are rotationally symmetric about an optical axis. The catadioptric objectives eliminate the central obscuration by (1) using a polarized beamsplitter (which passes radiation of a first polarization and reflects radiation of a second polarization), and/or (2) using one or more folding mirrors to direct off-axis radiation into the pupil of the catadioptric objective. An example catadioptric objective is shown in FIG. 2.
    Type: Grant
    Filed: April 7, 2009
    Date of Patent: November 22, 2011
    Assignee: ASML Holding N.V.
    Inventors: Stanislav Y. Smirnov, Eric Brian Catey, Adel Joobeur
  • Publication number: 20100149548
    Abstract: A method and systems for reticle inspection. The method includes coherently illuminating surfaces of an inspection reticle and a reference reticle, applying a Fourier transform to scattered light from the illuminated surfaces, shifting the phase of the transformed light from the reference reticle such that a phase difference between the transformed light from the inspection reticle and the transformed light from the reference reticle is 180 degrees, combining the transformed light as an image subtraction, applying an inverse Fourier transform to the combined light, and detecting the combined light at a detector. An optical path length difference between two optical paths from the illumination source to the detector is less than a coherence length of the illumination source. The image detected by the detector represents a difference in amplitude and phase distributions of the reticles allowing foreign particles, defects, or the like, to be easily distinguished.
    Type: Application
    Filed: October 5, 2009
    Publication date: June 17, 2010
    Applicant: ASML HOLDING N.V.
    Inventors: YEVGENIY KONSTANTINOVICH SHMAREV, ERIC BRIAN CATEY, ROBERT ALBERT THARALDSEN, RICHARD DAVID JACOBS
  • Publication number: 20100149505
    Abstract: Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects.
    Type: Application
    Filed: October 26, 2009
    Publication date: June 17, 2010
    Applicant: ASML Holding N.V.
    Inventors: Harry SEWELL, Eric Brian Catey, Adel Joobeur, Yevgeniy Konstantinovich Shmarev