Abstract: A semiconductor laser source, including a stack of semiconductor laser diodes each including at least one active region. The active region includes a series of semiconductor layers located between an ohmic contact layer and a substrate which also assumes the function of an ohmic contact layer. Pressure keeps the diodes in contact with one another by way of their ohmic contact layers. Each diode has dimensions, especially in their thickness, so that the transient heating in each diode is as small as possible and so that the average heating in the stackable diodes does not exceed a predetermined value.