Abstract: An integrated circuit is provided that comprises a substrate of silicon and an interconnect in a through-hole extending from the first to the second side of the substrate. The interconnect is coupled to a metallization layer on the first side of the substrate and is provided on an amorphous silicon layer that is present at a side wall of the through-hole, and particularly at an edge thereof adjacent to the first side of the substrate. The interconnect comprises a metal stack of nickel and silver. A preferred way of forming the amorphous silicon layer is a sputter etching technique.

Abstract: A carrier substrate (100) with laser sources includes a transparent center substrate (20), an upper substrate (30) adhered to the center substrate having openings (40) formed therein to expose the center substrate on a first side, and a lower substrate (32) adhered to the center substrate on a second side opposite the first side and having openings (42) formed therein to expose the center substrate on the second side, the openings on the lower substrate corresponding to positions of the openings in the upper substrate. Frequency conversion elements (60) are disposed on the center substrate within the openings of the lower substrate. Laser dies (70) are aligned to the frequency conversion elements and coupled to the lower substrate to provide light though the frequency conversion elements and the center substrate during operation. Methods for fabrication are also disclosed.

Abstract: An integrated circuit (100) is provided that comprises a substrate (140) of silicon and an interconnect (130) in a through-hole extending from the first to the second side of the substrate. The interconnect is coupled to a metallisation layer (120) on the first side of the substrate and is provided on an amorphous silicon layer that is present at a side wall of the through-hole, and particularly at an edge thereof adjacent to the first side of the substrate. The interconnect comprises a metal stack of nickel and silver. A preferred way of forming the amorphous silicon layer is a sputter etching technique.