Abstract: Quantum dot devices with three of more accumulation gates provided over a single row of a quantum dot formation region are disclosed. Each accumulation gate is electrically coupled to a respective doped region. In this manner, multiple single electron transistors (SETs) are provided along the row. Side and/or center screening gates may be used to apply microwave pulses for qubit control and to control electrostatics so that source and drain regions of the multiple SETs with quantum dots formed along the single row of a quantum dot formation region are sufficiently isolated from one another. Such quantum dot devices provide strong spatial localization of the quantum dots, good control over quantum dot interactions and manipulation, good scalability in the number of quantum dots included in the device, and/or design flexibility in making electrical connections to the quantum dot devices to integrate the quantum dot devices in larger computing devices.

Abstract: Novel closed system methods and apparatus for the production and utilization of algae are disclosed. A substantially pure form of a desired strain of alga is obtained and cultivated (or isolated and grown). The desired species of alga is isolated from the contaminants and other algae and placed in the controlled environment where its growth is cultivated without contaminants. At desired points in time, a portion of the cultivated alga is removed, with the remainder serving as progenitor stock for growing more of the desired alga. The removed alga is processed and placed in product form.