Abstract: Novel semiconductor devices are taught. The novel devices include a thin film transistor (TFT) with an n-type semiconductor layer to form a channel between a source and a drain. The TFT further includes a source-channel interfacial member adjacent to at least the source contact of the device to provide depletion layer control of the operation of the TFT.

Abstract: The present invention is directed to a liquid, diphenylmethane diisocyanate composition having an isocyanate functionality of greater than 2.0 and having an isocyanate group content of from about 20 to about 30 percent by weight prepared by reacting:(a) diphenylmethane diisocyanate with(b) a mixture of(i) from about 5 to about 20 equivalent percent of a monohydroxy alcohol,(ii) from about 25 to about 35 equivalent percent of a poly-1,2-propylene ether glycol having a molecular weight of from 134 to 700, and(iii) from about 45 to about 65 equivalent percent of a trihydroxy alcohol selected from the group consisting of trimethylolpropane, triethylolpropane, glycerin and 1,3,6-hexane triol,the total equivalent percent of (i), (ii) and (iii) being 100,the weight ratio of (a) to (b) being from 5:1 to 15:1.