Abstract: The present disclosure relates to a composition formed with a precursor including a C1-4 haloaliphatic or C1-4 aliphatic group or vinyl group (—CH?CH2) and other unsaturated substituents, as well as methods for forming and employing such compositions. In particular embodiments, the haloaliphatic group is a C1-2 haloalkyl group, which in turn provides a resist film having enhanced radiation absorptivity and/or minimal film shrinkage (e.g., upon radiation exposure and/or post-exposure bake). In other embodiments, the aliphatic group is a C1-2 alkyl or vinyl group and other unsaturated substituents, which can be dry deposited. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using an organic vapor such as a carboxylic acid. In some implementations, the organic vapor is trifluoroacetic acid. In some implementations, the organic vapor is hexafluoro-acetylacetone. A metal-containing resist film such as an EUV-sensitive organo-metal oxide may be deposited on a semiconductor substrate using a dry or wet deposition technique. The metal-containing resist film on the semiconductor substrate may be developed using the organic vapor, or residue of metal-containing resist material formed on surfaces of a process chamber may be removed using the organic vapor.

Abstract: The present disclosure relates to a film formed with a metal precursor and an organic precursor, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the film includes alternating layers of metal-containing layers and organic layers. In other embodiments, the film includes a matrix of deposited metal and organic constituents.

Abstract: The present disclosure relates to a film formed with a tantalum-based precursor, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.

Abstract: The present disclosure relates to use of a metal chelator to treat an exposed photoresist film. In particular embodiments, the metal chelator is employed to remove an interfacial area that is disposed between exposed and unexposed areas or disposed within an exposed area, thereby enhancing patterning quality.

Abstract: The present disclosure relates to a film formed with an organotin(II) compound, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film.

Abstract: The present disclosure relates to a film formed with a precursor and an organic co-reactant, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the carbon content within the film can be tuned by decoupling the sources of the radiation-sensitive metal elements and the radiation-sensitive organic moieties during deposition. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.

Abstract: Various embodiments herein relate to techniques for depositing photoresist material on a substrate. For example, the tin techniques may involve providing the substrate in a reaction chamber; providing a first and second reactant to the reaction chamber, where the first reactant is an organo-metallic precursor having a formula of M1aR1bL1c, where: M1 is a metal having a high patterning radiation-absorption cross-section, R1 is an organic group that survives the reaction between the first reactant and the second reactant and is cleavable from M1 under exposure to patterning radiation, L1 is a ligand, ion, or other moiety that reacts with the second reactant, a?1, b?1, and c?1, and where at least one of the following conditions is satisfied: the photoresist material comprises two or more high-patterning radiation absorbing elements, and/or the photoresist material comprises a composition gradient along a thickness of the photoresist material.

Abstract: The present disclosure relates to post-application treatment of a radiation-sensitive film to provide a hardened resist film. In some instances, such films can be used to form a pattern by a positive tone wet development process.