Abstract: Embodiments of an IC device are disclosed. In some embodiments, an integrated circuit (IC) device, includes: an first active semiconductor layer that includes first active semiconductor device regions; a second active semiconductor layer that includes active semiconductor regions, the second active semiconductor layer being connected to the first active semiconductor layer and being positioned over the first active semiconductor layer; a first redistribution layer positioned over the second active conductor layer, the first redistribution layer is electrically connected to the first active semiconductor layer and the second active semiconductor layer; a passivation layer positioned on the first redistribution layer; a second redistribution layer positioned over the passivation layer, wherein the second redistribution layer is electrically connected to the first redistribution layer.

Abstract: Disclosed is a robotic ultrasound system comprising an ultrasound probe and a transport mechanism for moving the ultrasound probe in at least one direction. The robotic ultrasound system also comprises a scanning bed comprising the transport mechanism and the ultrasound probe, the scanning bed having a fluid filled portion for the ultrasound probe, wherein a fluid of the fluid filled portion allows transmission of ultrasound waves from the ultrasound probe to a surface of the robotic ultrasound system.

Abstract: The present invention relates to systems and methods for finding and sampling hydrocarbons from seeps in water or from artificial sources of water. The present invention related to systems and methods for in situ analyzing fluid samples in a body of water. The systems and methods can be used to find hydrocarbons and associated non-hydrocarbons from seeps in water. Such seeps may come from natural sources in deep water, possibly as deep as 3000 m or even more.

Abstract: Aspects of the subject technology relate to a method of correcting sensor position. The method comprises transmitting one or more first pulses of a first frequency range towards a first portion of a seabed and one or more second pulses of a second frequency range towards a second portion of the seabed, and receiving a first set and second set of backscattered data. The method further includes processing the first and second set of backscattered data to form a first and second set of image data and comparing the first set and second set of image data. The method further includes creating one or more error vectors between the first set and second set of image data, and updating the first set of backscattered data based on the one or more error vectors to produce an updated set of image data.

Abstract: The present invention relates to systems and methods for finding and sampling hydrocarbons from seeps in water or from artificial sources of water. The present invention related to systems and methods for in situ analyzing fluid samples in a body of water. The systems and methods can be used to find hydrocarbons and associated non-hydrocarbons from seeps in water. Such seeps may come from natural sources in deep water, possibly as deep as 3000 m or even more.

Abstract: Aspects of the subject technology relate to a method of correcting sensor position. The method comprises transmitting one or more first pulses of a first frequency range towards a first portion of a seabed and one or more second pulses of a second frequency range towards a second portion of the seabed, and receiving a first set and second set of backscattered data. The method further includes processing the first and second set of backscattered data to form a first and second set of image data and comparing the first set and second set of image data. The method further includes creating one or more error vectors between the first set and second set of image data, and updating the first set of backscattered data based on the one or more error vectors to produce an updated set of image data.

Abstract: A decorative artificial plant apparatus having a tubular frame configured to resemble the longitudinal shape of trunk and branch portions of a natural plant that is being duplicated. A stack of overlapping open cylinder segments is supported on the frame shaped to collectively resemble an outer surface of the trunk portion. Each cylinder segment has an expansion feature configured to diametrically expand when overlapped around an adjacent cylinder segment in the stack.

Abstract: The integrated gate dual transistor (IGDT) has two controllable gates (G1, G2), a first gate (G1) being provided on the cathode side and being driven via a low-inductance first gate terminal with a first gate current, and a second gate (G2) being provided on the anode side and being driven via a low-inductance second gate terminal with a second gate current. In the switch-off operation of the IGDT, the rate of rise of the voltage across the IGDT is limited via the two gates. Limiting the rate of rise of the voltage across the IGDT prevents voltages from building up at different speeds in a series circuit of IGDTs, and thus unequal loads from overheating and destroying the individual IGDTs.

Abstract: The integrated gate dual transistor (IGDT) has two controllable gates (G1, G2), a first gate (G1) being provided on the cathode side and being driven via a low-inductance first gate terminal with a first gate current, and a second gate (G2) being provided on the anode side and being driven via a low-inductance second gate terminal with a second gate current. In the switch-off operation of the IGDT, the rate of rise of the voltage across the IGDT is limited via the two gates.

Abstract: A turn-off high power semiconductor device with the inner pnpn-layer structure of a Gate-Commutated Thyristor and a first gate on the cathode side has an additional second gate on the anode side, said second gate contacting the n-doped base layer and having a second gate contact. A second gate lead which is of rotationally symmetrical design and is disposed concentrically with respect to the anode contact is in contact with said second gate contact. Said second gate lead is brought out of the component and electrically insulated from the anode contact.