Patents by Inventor Eric COLEGROVE

Eric COLEGROVE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of growing CdTe-based materials at high rates
    Patent number: 10134590
    Abstract: Systems and methods for growing high-quality CdTe-based materials at high growth rates are provided. According to an aspect of the invention, a method includes depositing a first CdTe-based layer on a CdTe-based template at a rate of greater than 1 ?m/min. Each of the first CdTe-based layer and the CdTe-based template has a single-crystal structure and/or a large-grain polycrystalline structure. The depositing is performed by physical vapor deposition.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: November 20, 2018
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: James M. Burst, David S. Albin, Eric Colegrove, Matthew O. Reese, Helio R. Moutinho, Wyatt K. Metzger, Joel N. Duenow
  • Methods of Growing CdTe-Based Materials At High Rates
    Publication number: 20180277365
    Abstract: Systems and methods for growing high-quality CdTe-based materials at high growth rates are provided. According to an aspect of the invention, a method includes depositing a first CdTe-based layer on a CdTe-based template at a rate of greater than 1 ?m/min. Each of the first CdTe-based layer and the CdTe-based template has a single-crystal structure and/or a large-grain polycrystalline structure. The depositing is performed by physical vapor deposition.
    Type: Application
    Filed: March 27, 2017
    Publication date: September 27, 2018
    Inventors: James M. Burst, David S. Albin, Eric Colegrove, Matthew O. Reese, Helio R. Moutinho, Wyatt K. Metzger, Joel N. Duenow
  • Controlling the stoichiometry and doping of semiconductor materials
    Patent number: 9419170
    Abstract: Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.
    Type: Grant
    Filed: February 5, 2015
    Date of Patent: August 16, 2016
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: David Albin, James Burst, Wyatt Metzger, Joel Duenow, Stuart Farrell, Eric Colegrove
  • CONTROLLING THE STOICHIOMETRY AND DOPING OF SEMICONDUCTOR MATERIALS
    Publication number: 20150221810
    Abstract: Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.
    Type: Application
    Filed: February 5, 2015
    Publication date: August 6, 2015
    Inventors: David ALBIN, James BURST, Wyatt METZGER, Joel DUENOW, Stuart FARRELL, Eric COLEGROVE