Abstract: A test method for a semiconductor memory device having a bidirectional data strobe terminal for a data strobe signal, and having at least one data terminal for a data signal at a test apparatus, which can at least generate data strobe and data signals and also transfer and evaluate data signals. The memory device is connected to a test apparatus, which generates data strobe and data signals, and transfers and evaluates data signals. In the course of the test using the data strobe and data signals, data are transferred from the first semiconductor memory device to a second semiconductor memory device of identical type and are evaluated after a read-out from the second semiconductor memory device by the test apparatus.

Abstract: A memory module includes at least one memory chip arranged on the memory module. Information about the memory module and/or the at least one memory chip arranged on the memory module can be stored directly on the memory chip, making use of a suited element, fuses or flip-flops, for example. A memory chip contains such an element for containing information relating to the memory chip and/or a memory module with which the memory chip is compatible, wherein the information containing element can be read out by means of an external processor.

Abstract: A memory circuit includes a plurality of memory cells, an input/output area for addressing or writing onto the plurality of memory cells by means of electrical signals, and an optical-electrical converter for converting optical signals into the electrical signals, the plurality of memory cells and the input/output area being integrated on a chip, and the optical-electrical converter being mechanically connected to the chip or being integrated into the chip.

Abstract: A test method for a semiconductor memory device having a bidirectional data strobe terminal for a data strobe signal, and having at least one data terminal for a data signal at a test apparatus, which can at least generate data strobe and data signals and also transfer and evaluate data signals. The memory device is connected to a test apparatus, which generates data strobe and data signals, and transfers and evaluates data signals. In the course of the test using the data strobe and data signals, data are transferred from the first semiconductor memory device to a second semiconductor memory device of identical type and are evaluated after a read-out from the second semiconductor memory device by the test apparatus.

Abstract: A memory module includes at least one memory chip arranged on the memory module. Information about the memory module and/or the at least one memory chip arranged on the memory module can be stored directly on the memory chip, making use of a suited element, fuses or flip-flops, for example. A memory chip contains such an element for containing information relating to the memory chip and/or a memory module with which the memory chip is compatible, wherein the information containing element can be read out by means of an external processor.

Abstract: A memory system comprising at least one memory cell in which information can be stored and a refreshing means refreshing the memory cell in predetermined time intervals is provided. In addition, the memory cell comprises a driving means driving the refreshing means in such a way that it only refreshes the memory cell when useful information is stored in the memory cell.

Abstract: A memory circuit includes a plurality of memory cells, an input/output area for addressing or writing onto the plurality of memory cells by means of electrical signals, and an optical-electrical converter for converting optical signals into the electrical signals, the plurality of memory cells and the input/output area being integrated on a chip, and the optical-electrical converter being mechanically connected to the chip or being integrated into the chip.

Abstract: The invention relates to a semiconductor module for a burn-in test configuration. The semiconductor module has a regulator which, when it is turned on, always supplies a constant low voltage to an internal circuit of the semiconductor module. The semiconductor module also contains a component which, when the burn-in voltage has been applied for a defined time period, supplies a different characteristic than when the internal voltage is applied.

Abstract: In a method and apparatus for determining neutron spectra using at least two neutron detectors which provide integral counting rates from which the spectrum of a neutron radiation can be approximated, and which consist each of a semiconductor diode, a converter layer, an inactive layer and an active layer. The various layers of each detector are different from those of the other neutron detector and so selected that the sensitivity functions of the two neutron detectors are different. An artificial neutral network is provided which is especially trained and to which the counting rates of the detectors are supplied to be processed for obtaining the neutron spectrum.