Abstract: The invention provides an LED filament device (1000) comprising (i) a first LED filament side (1110), (ii) a second LED filament side (1120), (iii) an intermediate layer (440), and (iv) a plurality of sources of light (100), wherein: (a) first sources of light (110) are configured to generate first white light (111) having a first correlated color temperature CCT1; wherein the first sources of light (110) are associated to the first filament side (1110); (b) second sources of light (120) are configured to generate second white light (121) having a second correlated color temperature CCT2; wherein the second sources of light (120) are associated to the first filament side (1110); wherein CCT2-CCT1?500 K; (c) third sources of light (130) are configured to generate blue third light (131); wherein the third sources of light (130) are associated to the second filament side (1120); (d) fourth sources of light (140) are configured to generate green fourth light (141); wherein the fourth sources of light (140) are as

Abstract: The invention provides a water-activatable luminescent particulate material (1) comprising particles (100), wherein each particle (100) comprises a solid state light source (10) functionally coupled with a water-activatable battery (20) and a water absorbing shell (120) enclosing at least part of the water-activatable battery (20). The invention also provides a luminescent particulate material spray device comprising a container configured to host the water-activatable luminescent particulate material.

Abstract: In a wafer bonding process, one or both of two wafer substrates are scored prior to bonding. By creating slots in the substrate, the wafer's characteristics during bonding are similar to that of a thinner wafer, thereby reducing potential warpage due to differences in CTE characteristics associated with each of the wafers. Preferably, the slots are created consistent with the singulation/dicing pattern, so that the slots will not be present in the singulated packages, thereby retaining the structural characteristics of the full-thickness substrates.

Abstract: A liquid immersion transfer process for applying electronics on a 3D object and a system is disclosed. In one embodiment, the process comprises providing a foil on a solid carrier in a foil provision stage, providing electronic wiring and an electronic component to the foil in an electronics provision stage, to provide said electronics, removing the solid carrier and arranging the foil on or in a liquid in a liquid application stage, and transferring the electronics to the 3D object in a transfer stage, as well as a 3D object obtainable by such process.

Abstract: LED lighting elements are provided over a first conductive layer, each comprising a pad with top and bottom electrical contacts. A spray coating fills the spaces between the LED lighting elements. It also initially covers the LED lighting elements until a top portion of the sprayed material is removed to reveal the LED lighting element top contact. A second conductive layer is formed over the sprayed material and the revealed top contact, the second conductive layer being connected to a second electrical terminal.

Abstract: The invention provides a water-activatable luminescent particulate material (1) comprising particles (100), wherein each particle (100) comprises a solid state light source (10) functionally coupled with a water-activatable battery (20) and a water absorbing shell (120) enclosing at least part of the water-activatable battery (20). The invention also provides a luminescent particulate material spray device comprising a container configured to host the water-activatable luminescent particulate material.

Abstract: In a wafer bonding process, one or both of two wafer substrates are scored prior to bonding. By creating slots in the substrate, the wafer's characteristics during bonding are similar to that of a thinner wafer, thereby reducing potential warpage due to differences in CTE characteristics associated with each of the wafers. Preferably, the slots are created consistent with the singulation/dicing pattern, so that the slots will not be present in the singulated packages, thereby retaining the structural characteristics of the full-thickness substrates.

Abstract: The present invention is related to a lighting device (100, 200, 300) and to a method for manufacturing such lighting device (100, 200, 300). A template (102) is provided having cavities (104) distributed across the template (102). The cavities (104) define mounting positions for a plurality of light source packages (110) each comprising a light source (112). The shape of the cavities matches the shape of the light source packages (110) such that the light source packages (110) have a limited number of possible mounting configurations in the cavities (104). Subsequently electrical conductors (122) are applied on a top surface of the template (102) for contacting electrodes of the light source packages (110). The light source packages (110, 208, 300) or the plurality of cavities comprise a reflective bottom layer (132, 220) and a light emitting surface of the light source (112, 210) faces the reflective bottom layer (132, 220).

Abstract: In a wafer bonding process, one or both of two wafer substrates are scored prior to bonding. By creating slots in the substrate, the wafer's characteristics during bonding are similar to that of a thinner wafer, thereby reducing potential warpage due to differences in CTE characteristics associated with each of the wafers. Preferably, the slots are created consistent with the singulation/dicing pattern, so that the slots will not be present in the singulated packages, thereby retaining the structural characteristics of the full-thickness substrates.

Abstract: The invention relates to a detector (6) for detecting radiation, especially x-ray radiation used in a computed tomography system. The detector comprises a direct conversion material (9) for converting radiation into electrons and holes, which are used for generating an electrical detection signal. The direct conversion material is illuminated with illumination light being broadband visible and/or broadband infrared light for reducing, in particular, eliminating, a polarization of the direct conversion material, which may occur when being traversed by the radiation to be detected and which may reduce the detection performance. By reducing the polarization of the direct conversion material the detection performance can be improved.

Abstract: In a wafer bonding process, one or both of two wafer substrates are scored prior to bonding. By creating slots in the substrate, the wafer's characteristics during bonding are similar to that of a thinner wafer, thereby reducing potential warpage due to differences in CTE characteristics associated with each of the wafers. Preferably, the slots are created consistent with the singulation/dicing pattern, so that the slots will not be present in the singulated packages, thereby retaining the structural characteristics of the full-thickness substrates.

Abstract: A semiconductor device and a method for manufacturing such semiconductor device for use in a stacked configuration of the semiconductor device are disclosed. The semiconductor device includes a substrate including at least part of an electronic circuit provided at a first side thereof. The substrate includes a passivation layer and a substrate via that extends from the first side to a via depth such that it is reconfigurable into a through-substrate. The semiconductor device further includes a patterned masking layer on the first side of the substrate. The patterned masking layer includes a trench extending fully through the patterned masking layer. The trench has been filled with a redistribution conductor. The substrate via and the redistribution conductor include metal paste and together form one piece, such that there is no physical interface between the through-substrate via and the redistribution conductor. Thus, the parasitic resistance of this electrical connection is reduced.

Abstract: The invention relates to a semiconductor device for use in a stacked configuration of the semiconductor device and a further semiconductor device. The semiconductor device comprises: a substrate (5) comprising at least part of an electronic circuit (7) provided at a first side thereof. The substrate (5) comprises a passivation layer (19) at the first side and a substrate via that extends from the first side to a via depth beyond a depth of the electronic circuit (7) such that it is reconfigurable into a through-substrate via (10) by backside thinning of the substrate (5). The semiconductor device further comprises: a patterned masking layer (15) on the first side of the substrate (5). The patterned masking layer (15) comprises at least a trench (16) extending fully through the patterned masking layer (15). The trench has been filled with a redistribution conductor (20). The substrate via and the redistribution conductor (20) comprise metal paste (MP) and together form one piece.

Abstract: The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer. This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material.

Abstract: A light emitting module (19), comprising at least one semi-conductor light source (20a-c) capable of emitting light, and a light-modifying member (21) arranged adjacent to the at least one semiconductor light source (20a-c) in a direction of emission of the light. The light-modifying member (21) is formed by a stacked sheet element (21) separated from an integral stacked sheet structure comprising first and second stacked sheets, so that the stacked sheet element (21) includes first and second sheet portions of the first and second stacked sheets, and at least the first sheet portion is configured to modify the emitted light. By providing the light-modifying member as a stacked sheet element which has been separated from an integral stacked sheet structure, batch manufacturing of the light-modifying member and/or the light emitting module is enabled, such that manufacturing steps requiring manual labor, or use of expensive equipment may be performed to produce the integral stacked sheet structure.

Abstract: The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material.

Abstract: The present invention relates to a LED module (10) comprising a substrate (12), at least one LED chip (20) mounted on a first side of said substrate, and an optical element (21) covering the LED chip(s) (20). The substrate (12) is further provided with at least one via channel (22) extending from the first side of the substrate to a second opposite side of the substrate, whereby the via channel(s) is provided with conducting means for electrically connecting the at least one LED chip (20) to a control circuit (32). By providing the substrate with via channels with conducting means, the control circuit may be connected at the second side (the bottom side) or at the edge of the substrate. Thus, no top mounted electrical interface is required from the substrate, which is advantageous with respect to miniaturization, light emission, etcetera.

Abstract: A method of manufacturing a back-side (14) illuminated image sensor (1) is disclosed, comprising the steps of: starting with a wafer (2) having a first (3) and a second surface (4), providing light sensitive pixel regions (5) extending into the wafer (2) from the first surface (3), securing the wafer (2) onto a protective substrate (7) such that the first surface (3) faces the protective substrate, the wafer comprising a substrate of a first material (8) with an optical transparent layer (9) and a layer of semiconductor material (10), wherein the substrate (8) is selectively removed from the layer of semiconductor material by using the optical transparent layer (9) as stopping layer. For back-side illuminated image sensors, light has to transmit through the semiconductor layer and enter into the light sensitive pixel regions (5). In order to reduce absorption losses, it is very advantageous that the semiconductor layer (10) can be made relatively thin with a good uniformity.

Abstract: The invention relates to a micro electromechanical device (1?) for tilting a body (2) in two degrees of freedom comprising a carrier element (3) and a membrane (4), the body (2) being connected via the membrane (4) to the carrier element (3), wherein the body (2) and the carrier element (3) each comprise at least one electrode (5,6). The body (2) is tilted by means of electrostatic forces (7) between the at least one electrode (5) of the body (2) and the at least one electrode (6) of the carrier element (3) by an application of a voltage (V1,V2) to said electrodes (5,6) from a voltage source.