Patents by Inventor Eric D. Hermanson
Eric D. Hermanson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240087839Abstract: A workpiece mounting system comprising a chuck and a base is disclosed. The emissivity of the base is increased to allow more heat transfer from the chuck to the base. In some embodiments, the emissivity of the base may be controllable so that for ion beams with lower power levels, the emissivity remains low, enabling the chuck to reach the desired temperature quickly. For ion beams with higher power levels, the emissivity may increase to allow more heat transfer to the base, allowing the chuck to maintain the desired temperature. High emissivity coatings may be applied to the top surface of the base. In other embodiments, a set of movable shields may be disposed between the chuck and the base. The position of the shields may be a function of the power level of the incoming ion beam.Type: ApplicationFiled: September 13, 2022Publication date: March 14, 2024Inventors: Dawei Sun, Eric D. Hermanson, Benjamin E. Heneveld
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Patent number: 11810754Abstract: A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a calibration sensor disposed in the beam line after the mass analyzer. The calibration sensor is able to measure both the total current of the ribbon ion beam, as well as provide information about its vertical position. Information from the calibration sensor can then be utilized by a controller to adjust various parameters to improve the density as well as the vertical position. In some embodiments, the calibration sensor may include a plurality of Faraday sensors, where, both the total current and the vertical position of the ion beam can be determined. Furthermore, the focus of the ion beam can be estimated based on the distribution of the current in the height direction.Type: GrantFiled: December 9, 2021Date of Patent: November 7, 2023Assignee: Applied Materials, Inc.Inventors: Eric D. Hermanson, Nevin Clay, Antonella Cucchetti, Philip Layne, Sudhakar Mahalingam, Michael Simmons
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Publication number: 20230282451Abstract: A plasma doping system including a plasma doping chamber, a platen mounted in the plasma doping chamber for supporting a workpiece, a source of ionizable gas coupled to the chamber, the ionizable gas containing a desired dopant for implantation into the workpiece, a plasma source for producing a plasma having a plasma sheath in a vicinity of the workpiece, the plasma containing positive ions of the ionizable gas, and accelerating said positive ions across the plasma sheath toward the platen for implantation into the workpiece, a shield ring surrounding the platen and adapted to extend the plasma sheath beyond an edge of the workpiece, and a cover ring disposed on top of the shield ring and adapted to mitigate sputtering of the shield ring, wherein the cover ring comprises a crystalline base layer and a non-crystalline top layer.Type: ApplicationFiled: March 5, 2022Publication date: September 7, 2023Inventors: Vikram M. Bhosle, Timothy J. Miller, Eric D. Hermanson, Christopher J. Leavitt, Jordan B. Tye
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Publication number: 20230187171Abstract: A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a calibration sensor disposed in the beam line after the mass analyzer. The calibration sensor is able to measure both the total current of the ribbon ion beam, as well as provide information about its vertical position. Information from the calibration sensor can then be utilized by a controller to adjust various parameters to improve the density as well as the vertical position. In some embodiments, the calibration sensor may include a plurality of Faraday sensors, where, both the total current and the vertical position of the ion beam can be determined. Furthermore, the focus of the ion beam can be estimated based on the distribution of the current in the height direction.Type: ApplicationFiled: December 9, 2021Publication date: June 15, 2023Inventors: Eric D. Hermanson, Nevin Clay, Antonella Cucchetti, Philip Layne, Sudhakar Mahalingam, Michael Simmons
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Patent number: 11562885Abstract: A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.Type: GrantFiled: June 18, 2021Date of Patent: January 24, 2023Assignee: Applied Materials, Inc.Inventors: Thomas Stacy, Jay T. Scheuer, Eric D. Hermanson, Bon-Woong Koo, Tseh-Jen Hsieh
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Patent number: 11437215Abstract: Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.Type: GrantFiled: December 13, 2019Date of Patent: September 6, 2022Assignee: APPLIED Materials, Inc.Inventors: Alexandre Likhanskii, Antonella Cucchetti, Eric D. Hermanson, Frank Sinclair, Jay T. Scheuer, Robert C. Lindberg
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Publication number: 20220037114Abstract: A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.Type: ApplicationFiled: June 18, 2021Publication date: February 3, 2022Applicant: Applied Materials, Inc.Inventors: Thomas Stacy, Jay T. Scheuer, Eric D. Hermanson, Bon-Woong Koo, Tseh-Jen Hsieh
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Patent number: 11222768Abstract: Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive porous material. In some embodiments, an ion implanter may include a plurality of beam line components for directing an ion beam to a target, and a porous material along a surface of at least one of the plurality of beamline components.Type: GrantFiled: August 26, 2019Date of Patent: January 11, 2022Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: James Alan Pixley, Eric D. Hermanson, Philip Layne, Lyudmila Stone, Thomas Stacy
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Patent number: 11114277Abstract: An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.Type: GrantFiled: June 3, 2020Date of Patent: September 7, 2021Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Jun Lu, Frank Sinclair, Eric D. Hermanson, Joseph E. Pierro, Michael D. Johnson, Michael S. DeLucia, Antonella Cucchetti
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Patent number: 11049691Abstract: A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a mass resolving apparatus having a resolving aperture, in which the resolving aperture may be moved in the X and Z directions. Additionally, a controller is able to manipulate the mass analyzer and quadrupole lenses so that the crossover point of desired ions can also be moved in the X and Z directions. By manipulating the crossover point and the resolving aperture, the parameters of the ribbon ion beam may be manipulated to achieve a desired result. Movement of the crossover point in the X direction may affect the mean horizontal angle of the beamlets, while movement of the crossover point in the Z direction may affect the horizontal angular spread and beam current.Type: GrantFiled: December 21, 2017Date of Patent: June 29, 2021Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Robert C. Lindberg, Eric D. Hermanson, Frank Sinclair, Antonella Cucchetti, Randy Martin, Michael D. Johnson, Ana Samolov, Svetlana B. Radovanov
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Publication number: 20210183609Abstract: Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.Type: ApplicationFiled: December 13, 2019Publication date: June 17, 2021Applicant: APPLIED Materials, Inc.Inventors: Alexandre Likhanskii, Antonella Cucchetti, Eric D. Hermanson, Frank Sinclair, Jay T. Scheuer, Robert C. Lindberg
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Patent number: 11011343Abstract: Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.Type: GrantFiled: August 16, 2019Date of Patent: May 18, 2021Assignee: APPLIED Materials, Inc.Inventors: Alexandre Likhanskii, Shengwu Chang, Frank Sinclair, Antonella Cucchetti, Eric D Hermanson, Christopher Campbell
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Publication number: 20210020399Abstract: Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.Type: ApplicationFiled: August 16, 2019Publication date: January 21, 2021Applicant: APPLIED Materials, Inc.Inventors: Alexandre Likhanskii, Shengwu Chang, Frank Sinclair, Antonella Cucchetti, Eric D Hermanson, Christopher Campbell
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Patent number: 10886098Abstract: An apparatus may include a main chamber, an entrance tunnel, having an entrance axis extending into the main chamber, and an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, on a lower side of the exit tunnel; and a catch assembly, disposed within the main chamber, in a line of sight from an exterior aperture of the exit tunnel.Type: GrantFiled: November 20, 2018Date of Patent: January 5, 2021Assignee: APPLIED Materials, Inc.Inventors: Alexandre Likhanskii, Frank Sinclair, Shengwu Chang, Eric D. Hermanson, Nevin H. Clay
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Publication number: 20200294765Abstract: An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.Type: ApplicationFiled: June 3, 2020Publication date: September 17, 2020Inventors: Bon-Woong Koo, Jun Lu, Frank Sinclair, Eric D. Hermanson, Joseph E. Pierro, Michael D. Johnson, Michael S. DeLucia, Antonella Cucchetti
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Patent number: 10741361Abstract: An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.Type: GrantFiled: August 29, 2019Date of Patent: August 11, 2020Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Jun Lu, Frank Sinclair, Eric D. Hermanson, Joseph E. Pierro, Michael D. Johnson, Michael S. DeLucia, Antonella Cucchetti
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Publication number: 20200161077Abstract: An apparatus may include a main chamber, an entrance tunnel, having an entrance axis extending into the main chamber, and an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, on a lower side of the exit tunnel; and a catch assembly, disposed within the main chamber, in a line of sight from an exterior aperture of the exit tunnel.Type: ApplicationFiled: November 20, 2018Publication date: May 21, 2020Applicant: APPLIED Materials, Inc.Inventors: Alexandre Likhanskii, Frank Sinclair, Shengwu Chang, Eric D. Hermanson, Nevin H. Clay
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Patent number: 10643823Abstract: Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive foam material. In some embodiments, the component is a plasma flood gun including a shield assembly coupled to the plasma flood gun. The shield assembly may include a first shield having a first main side facing an ion beam target, and a connection block coupled to a second main side of the first shield. The shield assembly may further include a mounting plate coupled to the connection block, and a second shield coupled to the mounting plate by a bracket. In some embodiments, the first shield and/or one or more process chamber walls includes a foam material, such as a conductive or nonconductive foam.Type: GrantFiled: October 16, 2018Date of Patent: May 5, 2020Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: James Alan Pixley, Eric D. Hermanson, Philip Layne, Lyudmila Stone, Thomas Stacy
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Publication number: 20200083021Abstract: Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive porous material. In some embodiments, an ion implanter may include a plurality of beam line components for directing an ion beam to a target, and a porous material along a surface of at least one of the plurality of beamline components.Type: ApplicationFiled: August 26, 2019Publication date: March 12, 2020Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: James Alan Pixley, Eric D. Hermanson, Philip Layne, Lyudmila Stone, Thomas Stacy
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Publication number: 20200083027Abstract: Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive foam material. In some embodiments, the component is a plasma flood gun including a shield assembly coupled to the plasma flood gun. The shield assembly may include a first shield having a first main side facing an ion beam target, and a connection block coupled to a second main side of the first shield. The shield assembly may further include a mounting plate coupled to the connection block, and a second shield coupled to the mounting plate by a bracket. In some embodiments, the first shield and/or one or more process chamber walls includes a foam material, such as a conductive or nonconductive foam.Type: ApplicationFiled: October 16, 2018Publication date: March 12, 2020Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: James Alan Pixley, Eric D. Hermanson, Philip Layne, Lyudmila Stone, Thomas Stacy