Abstract: A method for minimizing harmonic distortion and/or intermodulation distortion of a radiofrequency signal propagating in a radiofrequency circuit formed on a semiconductor substrate coated with an electrically insulating layer, wherein a curve representing the distortion as a function of a power of the input or output signal exhibits a trough around a given power (PDip), the method comprises applying, between the radiofrequency circuit and the semiconductor substrate, an electrical potential difference (VGB) chosen so as to move the trough toward a given operating power of the radiofrequency circuit.

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

Abstract: A structure for a for radiofrequency application applications includes a high-resistivity support substrate having a front face defining a main plane, a charge-trapping layer disposed on the front face of the support substrate, a first dielectric layer disposed on the charge-trapping layer, an active layer disposed on the first dielectric layer, at least one buried electrode disposed above or in the charge-trapping layer. The buried electrode comprises a conductive layer and a second dielectric layer.

Abstract: The disclosure relates to a device for measuring an electrical characteristic of a substrate comprising a support made of a dielectric material having a bearing surface, the support comprising an electrical test structure having a contact surface flush with the bearing surface of the support, the bearing surface of the support and the contact surface of the electrical test structure being suitable for coming into close contact with a substrate. The measurement device also comprises at least one connection bump contact formed on another surface of the support and electrically linked to the electrical test structure. This disclosure also relates to a system for characterizing a substrate and a method for measuring a characteristic of a substrate employing the measurement device.

Abstract: A structure for radiofrequency applications includes: a support substrate of high-resistivity silicon comprising a lower part and an upper part having undergone a p-type doping to a depth D; a mesoporous trapping layer of silicon formed in the doped upper part of the support substrate. The depth D is less than 1 micron and the trapping layer has a porosity rate of between 20% and 60%.

Abstract: A substrate for microelectronic radiofrequency devices includes a carrier substrate made of a first semiconductor material having a resistivity higher than 500 ohms·cm; a plurality of trenches in the carrier substrate, which trenches are filled with a second material, and defining on a first side of the carrier substrate a plurality of first zones made of a first material and at least one second zone made of a second material. The second material has a resistivity higher than 10 kohms·cm, and the first zones have a maximum dimension smaller than 10 microns and are insulated from one another by the second zone.

Abstract: Methods of forming a semiconductor structure include forming a device layer on an initial substrate, attaching a first surface of the device layer to a temporary substrate and forming a high resistivity layer on a second surface of the device layer by removing a portion of the initial substrate. Methods further include attaching a final substrate to the high resistivity layer and removing the temporary substrate. Semiconductor structures are fabricated by such methods that include a final substrate, a high resistivity layer disposed over the final substrate and a device layer disposed over the high resistivity layer.

Abstract: This disclosure relates to a method of fabrication of a surface acoustic wave device comprising the step (a) of providing a piezoelectric structure, the step (b) of providing a dielectric structure, wherein the step (b) comprises a step (b1) of metalizing the dielectric structure, and the method further comprising the step (c) of bonding the metalized dielectric structure to the piezoelectric structure.

Abstract: The disclosure relates to a hybrid structure for a surface-acoustic-wave device comprising a useful layer of piezoelectric material joined to a carrier substrate having a thermal expansion coefficient lower than that of the useful layer; the hybrid structure comprising an intermediate layer located between the useful layer and the carrier substrate, the intermediate layer being a structured layer formed from at least two different materials comprising a plurality of periodic motifs in the plane of the intermediate layer.

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

Abstract: A composite structure for an acoustic wave device comprising a heterostructure includes: a useful layer of piezoelectric material, having a first face and a second face, the first face being arranged at a first bonding interface on a support substrate having a coefficient of thermal expansion less than that of the useful layer, wherein the composite structure further comprises a functional layer, an entire surface of which is arranged at a second bonding interface on the second face of the useful layer and having a coefficient of thermal expansion less than that of the useful layer. Methods are used for producing such a composite structure.

Abstract: The disclosure relates to a device for measuring an electrical characteristic of a substrate comprising a support made of a dielectric material having a bearing surface, the support comprising an electrical test structure having a contact surface flush with the bearing surface of the support, the bearing surface of the support and the contact surface of the electrical test structure being suitable for coming into close contact with a substrate. The measurement device also comprises at least one connection bump contact formed on another surface of the support and electrically linked to the electrical test structure. This disclosure also relates to a system for characterizing a substrate and a method for measuring a characteristic of a substrate employing the measurement device.

Abstract: A structure for radiofrequency applications includes: a support substrate of high-resistivity silicon comprising a lower part and an upper part having undergone a p-type doping to a depth D; mesoporous trapping layer of silicon formed in the doped upper part of the support substrate. The depth D is less than 1 micron and the trapping layer has a porosity rate of between 20% and 60%.

Abstract: Methods of forming a semiconductor structure include forming a device layer on an initial substrate, attaching a first surface of the device layer to a temporary substrate and forming a high resistivity layer on a second surface of the device layer by removing a portion of the initial substrate. Methods further include attaching a final substrate to the high resistivity layer and removing the temporary substrate. Semiconductor structures are fabricated by such methods that include a final substrate, a high resistivity layer disposed over the final substrate and a device layer disposed over the high resistivity layer.

Abstract: This disclosure relates to a method of fabrication of a surface acoustic wave device comprising the step (a) of providing a piezoelectric structure, the step (b) of providing a dielectric structure, wherein the step (b) comprises a step (b1) of metalizing the dielectric structure, and the method further comprising the step (c) of bonding the metalized dielectric structure to the piezoelectric structure.

Abstract: The invention relates to an electronic device for radiofrequency or power applications, comprising a semiconductor layer supporting electronic components on a support substrate, wherein the support substrate comprises a base layer having a thermal conductivity of at least 30 W/mK and a superficial layer having a thickness of at least 5 ?m, the superficial layer having an electrical resistivity of at least 3000 Ohm·cm and a thermal conductivity of at least 30 W/mK. The invention also relates to two processes for manufacturing such a device.

Abstract: The invention relates to an electronic device for radio frequency or power applications, comprising a semiconductor layer supporting electronic components on a support substrate, wherein the support substrate comprises a base layer having a thermal conductivity of at least 30 W/m K and a superficial layer having a thickness of at least 5 ?m, the superficial layer having an electrical resistivity of at least 3000 Ohm·cm and a thermal conductivity of at least 30 W/m K. The invention also relates to two processes for manufacturing such a device.

Abstract: The invention relates to a demodulator to demodulate frequency-modulated signals FM including a phase locked loop PLL including at least a phase detector, a loop filter and a voltage controlled oscillator function VCO?, characterized in that said voltage controlled oscillator function VCO? has modifiable gain. The invention allows to eliminate drawbacks presented by the conventional use of a complex gain modifiable amplifier at the input of demodulated signal processing means. Application: demodulation of modulated signals: wireless phone, home network.

Abstract: The invention relates to a demodulator to demodulate frequency-modulated signals FM including a phase locked loop PLL including at least a phase detector, a loop filter and a voltage controlled oscillator function VCO?, characterized in that said voltage controlled oscillator function VCO? has modifiable gain. The invention allows to eliminate drawbacks presented by the conventional use of a complex gain modifiable amplifier at the input of demodulated signal processing means. Application: demodulation of modulated signals: wireless phone, home network.

Abstract: The present invention discloses an output stage for a charge pump, mainly formed by transistors, for example, MOS-type transistors. This output stage includes capacitive elements intended to compensate charge/discharge phenomena of parasitic capacitances intrinsic to the transistors. A charge pump including such a stage may thus produce a low-value nominal current and enables to completely integrate a phase-locked loop demodulator.