Abstract: A method for producing a metal composite material with an embedded functional structure, in which a build-up of layers comprising a number of layers that are arranged one on top of the other in the vertical direction is produced and pressed, may involve producing the build-up of layers by providing a lower layer comprising a metal substrate, arranging at least in certain portions over the lower layer in a vertical direction an intermediate layer that is in contact with the lower layer, and arranging one or more functional structures respectively in a portion of the build-up of layers. To reduce the risk of increased degradation, before the pressing, the build-up of layers may have the same thickness in the respective portion with the functional structure as in the remaining build-up of layers. Further, a metal composite material with an embedded functional structure may be produced by such a method.

Abstract: A method for producing a metal composite material with an embedded functional structure, in which a build-up of layers comprising a number of layers that are arranged one on top of the other in the vertical direction is produced and pressed, may involve producing the build-up of layers by providing a lower layer comprising a metal substrate, arranging at least in certain portions over the lower layer in a vertical direction an intermediate layer that is in contact with the lower layer, and arranging one or more functional structures respectively in a portion of the build-up of layers. To reduce the risk of increased degradation, before the pressing, the build-up of layers may have the same thickness in the respective portion with the functional structure as in the remaining build-up of layers. Further, a metal composite material with an embedded functional structure may be produced by such a method.

Abstract: A plurality of devices are hermetically packaged at the wafer level by 1) providing a substrate wafer having a plurality of at least partially-formed devices thereon; 2) forming separation walls on the substrate wafer, around different ones of the at least partially-formed devices; and 3) wafer bonding a cap wafer to the separation walls, to form a plurality of hermetic packages.

Abstract: In one aspect, a signal path is described. The signal path has a nominal impedance over a specified bandwidth and interconnects a port of a microwave circuit package and a microwave component mounted in the microwave circuit package. The signal path includes an inductive transition and first and second capacitive structures. The inductive transition extends from a first point on the signal path to a second point on the signal path and has an excess impedance above the nominal impedance. The first and second capacitive structures respectively shunt the first and second points on the signal path to compensate the excess impedance of the inductive transition. The inductive transition and the first and second capacitive structures approximate a filter having an impedance substantially matching the nominal impedance over the specified bandwidth.

Abstract: An integrated step attenuator (“ISA”) monolithically integrated on a single chip for adjusting an input signal. The ISA may include a step attenuation network (“SAN”) that may include at least one switchable attenuation section, and at least one electronically switchable trimming network (“ESTN”). The SAN may be configured to adjust the input signal responsive to the state of a switch that bridges the attenuation sections of the SAN, and the ESTN may be configured to adjust the input signal responsive to the state of a switch in signal communication with one or more shunt resistors in the ESTN.

Abstract: An integrated circuit includes a first RF port and a second RF port. A limiter section is disposed between the first RF port and the second RF port and a detector section coupled to an RF signal path between the first RF port and the second RF port configured to detect a power level of an input signal, and coupled to the limiter section.

Abstract: A directional bridge for measuring propagated signals to and from a source device to a load device where both the source device and load device are in signal communication with the directional bridge is disclosed. The directional bridge may include a first bridge circuit network and a first sensing element in signal communication with the first bridge circuit network. The first sensing element may produce a first measured signal that is proportional to the propagated signals.

Abstract: A low-loss directional bridge for measuring propagated signals from a source device to a load device or from a load device to a source device, where both the source device and the load device are in signal communication with the low-loss directional bridge. The low-loss directional bridge may include a first bridge circuit network and a first sensing element in signal communication with the first bridge circuit network. The first sensing element may produce a first measured signal that is proportional to the propagated signals. Additionally, the first bridge circuit network may include a first, a second, and a third impedance element in signal communication with the source device and the first sensing element.

Abstract: In one aspect, a signal path is described. The signal path has a nominal impedance over a specified bandwidth and interconnects a port of a microwave circuit package and a microwave component mounted in the microwave circuit package. The signal path includes an inductive transition and first and second capacitive structures. The inductive transition extends from a first point on the signal path to a second point on the signal path and has an excess impedance above the nominal impedance. The first and second capacitive structures respectively shunt the first and second points on the signal path to compensate the excess impedance of the inductive transition. The inductive transition and the first and second capacitive structures approximate a filter having an impedance substantially matching the nominal impedance over the specified bandwidth.