Abstract: Vapor deposition precursors that can deposit conformal thin ruthenium films on substrates with a very high growth rate, low resistivity and low levels of carbon, oxygen and nitrogen impurities have been provided. The precursors described herein include a compound having the formula CMC?, wherein M comprises a metal or a metalloid; C comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; and C? comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; wherein at least one of C and C? further and individually is substituted with a ligand represented by the formula CH(X)R1, wherein X is a N, P, or S-substituted functional group or hydroxyl, and R1 is hydrogen or a hydrocarbon. Methods of production of the vapor deposition precursors and the resulting films, and uses and end uses of the vapor deposition precursors and resulting films are also described.

Abstract: A plasma enhanced atomic layer deposition (PEALD)-grown mixed-phase/nano-laminate barrier having the robust barrier properties of TaN with direct plate characteristics of Ru. Ru:TaN layers as thin as 5 nm act both as robust copper barrier and as a copper direct plating layer. Direct plated copper films exhibit preferred (111) orientation with the use of medium acid level electrolyte (0.8M H2SO4) and higher plating current density (10 mA/cm2) during the copper electrochemical deposition process. (111) texture in the direct plated copper films improves as Ru content in the mixed-phase barrier is increased. Direct plated copper films possess larger grain size characteristics as compared to copper electroplated on PVD copper seed. The filling characteristics in sub-65 nm features are equivalent for seeded copper and Ru:TaN barrier films without a seed layer.