Patents by Inventor Eric Gitlin

Eric Gitlin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for forming single crystal silicon ingots with improved resistivity control
    Patent number: 12024789
    Abstract: Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: July 2, 2024
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Richard J. Phillips, Parthiv Daggolu, Eric Gitlin, Robert Standley, HyungMin Lee, Nan Zhang, Jae-Woo Ryu, Soubir Basak
  • METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH IMPROVED RESISTIVITY CONTROL
    Publication number: 20210071315
    Abstract: Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.
    Type: Application
    Filed: October 15, 2020
    Publication date: March 11, 2021
    Inventors: Richard J. Phillips, Parthiv Daggolu, Eric Gitlin, Robert Standley, HyungMin Lee, Nan Zhang, Jae-Woo Ryu, Soubir Basak
  • Methods for forming single crystal silicon ingots with improved resistivity control
    Patent number: 10920337
    Abstract: Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: February 16, 2021
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Richard J. Phillips, Parthiv Daggolu, Eric Gitlin, Robert Standley, HyungMin Lee, Nan Zhang, Jae-Woo Ryu, Soubir Basak
  • METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH IMPROVED RESISTIVITY CONTROL
    Publication number: 20180179660
    Abstract: Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.
    Type: Application
    Filed: December 27, 2017
    Publication date: June 28, 2018
    Inventors: Richard J. Phillips, Parthiv Daggolu, Eric Gitlin, Robert Standley, HyungMin Lee, Nan Zhang, Jae-Woo Ryu, Soubir Basak