Abstract: A device for fabricating a crystalline conversion layer from a growth solution, has a first wall and a substrate defining between them a crystalline growth cavity; a device for inlet/outlet of the solution controlling, over time, at least the supply or extraction of the growth solution to and from the crystalline growth cavity; a heating device creating a temperature profile in the crystalline growth cavity, the substrate or the first wall; the temperature profile controlling a free formation of the crystalline conversion layer over a thickness of greater than 1 micrometer, in a direction mainly transverse to forming face; the whole of the thickness of the crystalline conversion layer being obtained by the free formation of the crystalline conversion layer.

Abstract: Measurements of electric charges obtained by the impact of ionizing radiation on a semiconductor detector are grouped in a histogram. Calibrations and data otherwise obtained are used to obtain acceptance probabilities of measurements, which are used to construct a histogram of events by weighting the measurements so as to exclude the influence of some factors (such as diffused radiation) or on the contrary to enhance this influence.

Abstract: A radiation imager including: a detector block including at least one detector configured to emit an optical signal from incident radiation to be imaged; a reading block that converts the optical signal into an electrical signal, including a plurality of photodetectors; a plurality of resin portions between the detector block and the photodetectors, in contact with the detector block and in contact with the photodetectors, the resin portions being separated by air, the resin portions including at least a part with cross-section increasing from the detector block to the reading block.

Abstract: A radiation imager including: a reading block; a first substrate; a plurality of portions made from a first material with a first optical index between the first substrate and the reading block; a second material at a periphery of at least one of the portions, the second material having a second optical index lower than the first optical index; and areas made from a third material surrounding at least ends of the portions oriented on a same side as the reading block, the areas made from a third material obtained by applying a layer made from a third material to the reading block and penetration of the end of the at least one portion made from a first material in the layer made from a third material.

Abstract: This device for the detection of ionizing radiation includes a stack integrating a first set of electrodes (1), a solid detector material sensitive to ionizing radiation (2), capable of interacting therewith by releasing electron and electron hole mobile charge carriers, and a second set of electrodes (3), said first and second sets of electrodes being polarized in such a way that an electric field is applied through the detector material (2), thereby allowing the charge carriers generated by the interaction between the detector material and the ionizing radiation to migrate. It further includes electrically insulated electrodes (41-44), known as non-collecting electrodes, and positioned in the volume of the detector material (2) subjected to the electric field, and capable, by capacitive effect, of detecting the charges induced by the migration of the charge carriers in the volume of the detector subjected to the electric field.

Abstract: Measurements of electric charges obtained by the impact of ionizing radiation on a semiconductor detector are grouped in a histogram. Calibrations and data otherwise obtained are used to obtain acceptance probabilities of measurements, which are used to construct a histogram of events by weighting the measurements so as to exclude the influence of some factors (such as diffused radiation) or on the contrary to enhance this influence.

Abstract: This device for the detection of ionizing radiation includes a stack integrating a first set of electrodes (1), a solid detector material sensitive to ionizing radiation (2), capable of interacting therewith by releasing electron and electron hole mobile charge carriers, and a second set of electrodes (3), said first and second sets of electrodes being polarized in such a way that an electric field is applied through the detector material (2), thereby allowing the charge carriers generated by the interaction between the detector material and the ionizing radiation to migrate. It further includes electrically insulated electrodes (41-44), known as non-collecting electrodes, and positioned in the volume of the detector material (2) subjected to the electric field, and capable, by capacitive effect, of detecting the charges induced by the migration of the charge carriers in the volume of the detector subjected to the electric field.

Abstract: A radiation detection device, including a detector in semi-conductor material, a first electrode, and a second electrode. The first electrode has a form of pixels, with a first pitch, on one of the sides of the detector. The device further includes a mechanism for identifying the energy of an incident photon in the detector as a function of signals coming uniquely from the second electrode.

Abstract: A detecting device comprises at least one 2-dimensional set of elementary sensors of the semiconductor type for transforming energy of radiation to be detected into electric signals. Each elementary sensor is provided on one side with an anode and on the opposite side with a cathode adapted to be electrically connected on a circuit for reading and operating on the signals. The anodes are electrically interconnected to constitute a plurality of anode subsets electrically connected at least in pairs to a measuring anode path looped on said reading and operating circuit. Each anode is connected to two separate measuring anode pats. The cathodes are electrically interconnected to constitute adjacent cathode subsets, each cathode subset being electrically connected to a measuring cathode path. The anodes belonging to two anode subsets and connected to a common anode path are associated with sensors whereof the cathodes belong to separate cathode subsets.

Abstract: A detecting device comprises at least one 2-dimensional set of elementary sensors of the semiconductor type for transforming energy of radiation to be detected into electric signals. Each elementary sensor is provided on one side with an anode and on the opposite side with a cathode adapted to be electrically connected on a circuit for reading and operating on the signals. The anodes are electrically interconnected to constitute a plurality of anode subsets electrically connected at least in pairs to a measuring anode path looped on said reading and operating circuit. Each anode is connected to two separate measuring anode paths. The cathodes are electrically interconnected to constitute adjacent cathode subsets, each cathode subset being electrically connected to a measuring cathode path. The anodes belonging to two anode subsets and connected to a common anode path are associated with sensors whereof the cathodes belong to separate cathode subsets.

Abstract: This method for optimizing the performance of a semiconductor detector intended to detect electromagnetic radiation, especially X-rays or ? rays, equipped with electrodes separately mounted on two opposite surfaces of said detector, namely a cathode and a pixelated anode respectively, involves (i) determining the signal that is representative of the sum of the charges detected by all or some of the anodes; and (ii) using the signal that is representative of said sum of the charges to establish one or more biparametric spectra as a function of this signal so as to determine any charge collection loss if charge sharing occurred on the pixelated anodes and, consequently, performing appropriate processing depending on the type of result desired.

Abstract: A radiation detection device, including a detector in semi-conductor material, a first electrode, and a second electrode. The first electrode has a form of pixels, with a first pitch, on one of the sides of the detector. The device further includes a mechanism for identifying the energy of an incident photon in the detector as a function of signals coming uniquely from the second electrode.

Abstract: This device for detecting ionizing radiation has a stacked structure comprising a first set of electrodes, a sensing element capable of interacting with the incident radiation to be detected by releasing mobile charges (electron-hole pairs) and a second set of electrodes, said first and second sets being intended to collect the mobile charges thus released. This stack also comprises a third set of electrodes intended to measure the charges induced by movement of the mobile charges, the electrodes in said third set being separated from those that constitute said second set by an electrically insulating layer defined so as to enable capacitive connection between the electrodes of said second set and the electrodes of said third set.

Abstract: This method for optimizing the performance of a semiconductor detector intended to detect electromagnetic radiation, especially X-rays or ? rays, equipped with electrodes separately mounted on two opposite surfaces of said detector, namely a cathode and a pixelated anode respectively, involves (i) determining the signal that is representative of the sum of the charges detected by all or some of the anodes; and (ii) using the signal that is representative of said sum of the charges to establish one or more biparametric spectra as a function of this signal so as to determine any charge collection loss if charge sharing occurred on the pixelated anodes and, consequently, performing appropriate processing depending on the type of result desired.