Abstract: An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

Abstract: An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

Abstract: An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

Abstract: An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

Abstract: A pinning process including the steps of gold-plating through-holes in a laminate carrier and crimping old or gold-plated pin located in the through-holes to form a pin head on the top and a pin bulge on the bottom of the laminate carrier to produce a plastic pin grid array. A variety of mechanical forming processes may be employed to form the pin heads and pin bulges and cause the pin to at least partially, and preferably substantially, fill and contact the gold-plated through-hole including swage pinning, impact pinning, and double-die pinning operations. By combining the steps of gold-plating through-holes of a laminate carrier and using a mechanical pinning process to crimp a gold or gold-plated pin in the through-holes, a reliable mechanical and electrical connection may be established between the pin and the metal lines both inside and on the surface of the laminate carrier without the need for lead-containing solders and pastes.

Abstract: A pinning process including the steps of gold-plating through-holes in a laminate carrier and crimping a gold or gold-plated pin located in the through-holes to form a pin head on the top and a pin bulge on the bottom of the laminate carrier to produce a plastic pin grid array. A variety of mechanical forming processes may be employed to form the pin heads and pin bulges and cause the pin to at least partially, and preferably substantially, fill and contact the gold-plated through-hole including swage pinning, impact pinning, and double-die pinning operations. By combining the steps of gold-plating through-holes of a laminate carrier and using a mechanical pinning process to crimp a gold or gold-plated pin in the through-holes, a reliable mechanical and electrical connection may be established between the pin and the metal lines both inside and on the surface of the laminate carrier without the need for lead-containing solders and pastes.

Abstract: An electronic package which includes a thermally conductive, e.g., copper, member having a thin layer of dielectric material, e.g., polyimide, on at least one surface thereof. On the polyimide is provided the desired high density circuit pattern which is electrically connected, e.g., using solder or wirebonds, to the respective contact sites of a semiconductor chip. If wirebonds are used, the copper member preferably includes an indentation therein and the chip is secured, e.g., using adhesive, within this indentation. If solder is used to couple the chip, a plurality of small diameter solder elements are connected to respective contact sites of the chip and to respective ones of the pads and/or lines of the provided circuit pattern. Significantly, the pattern possesses lines and/or pads in one portion which are of high density and lines and/or pads in another portion which are of lesser density.