Abstract: A gallium oxide field effect transistor that is built on a base layer. A doped gallium oxide channel layer is disposed on top of the base layer, and a dielectric barrier layer is disposed on top of the gallium oxide channel layer. Source contacts and drain contacts are disposed on top of the dielectric barrier layer, with one each of the drain contacts disposed in an interdigitated manner between one each of the source contacts. The interdigitated source contacts and drain contacts thereby define channels between them, where alternating ones of the channels are defined as odd channels, with even channels disposed therebetween. Gate contacts are disposed on top of the dielectric barrier layer in only one of the odd channels and the even channels.

Abstract: A gallium oxide field effect transistor that is built on a base layer. A doped gallium oxide channel layer is disposed on top of the base layer, and a dielectric barrier layer is disposed on top of the gallium oxide channel layer. Source contacts and drain contacts are disposed on top of the dielectric barrier layer, with one each of the drain contacts disposed in an interdigitated manner between one each of the source contacts. The interdigitated source contacts and drain contacts thereby define channels between them, where alternating ones of the channels are defined as odd channels, with even channels disposed therebetween. Gate contacts are disposed on top of the dielectric barrier layer in only one of the odd channels and the even channels.

Abstract: A gallium oxide field effect transistor that is built on a base layer. A doped gallium oxide channel layer is disposed on top of the base layer, and a dielectric barrier layer is disposed on top of the gallium oxide channel layer. Source contacts and drain contacts are disposed on top of the dielectric barrier layer, with one each of the drain contacts disposed in an interdigitated manner between one each of the source contacts. The interdigitated source contacts and drain contacts thereby define channels between them, where alternating ones of the channels are defined as odd channels, with even channels disposed therebetween. Gate contacts are disposed on top of the dielectric barrier layer in only one of the odd channels and the even channels.

Abstract: A gallium oxide field effect transistor that is built on a base layer. A doped gallium oxide channel layer is disposed on top of the base layer, and a dielectric barrier layer is disposed on top of the gallium oxide channel layer. Source contacts and drain contacts are disposed on top of the dielectric barrier layer, with one each of the drain contacts disposed in an interdigitated manner between one each of the source contacts. The interdigitated source contacts and drain contacts thereby define channels between them, where alternating ones of the channels are defined as odd channels, with even channels disposed therebetween. Gate contacts are disposed on top of the dielectric barrier layer in only one of the odd channels and the even channels.

Abstract: A method of evaluating localized degradation of a III-V compound semiconductor. The method includes preparing first and second III-V compound semiconductors. The second III-V compound semiconductor that is similar to the first III-V compound semiconductor and further comprises a shield layer that is configured to alter exposed portions of channels of the second III-V compound semiconductor. The first and second III-V compound semiconductors and irradiated and then electrically tested. Results of the electrical testing of the first and second III-V compound semiconductors are compared.

Abstract: A method of evaluating localized degradation of a III-V compound semiconductor. The method includes preparing first and second III-V compound semiconductors. The second III-V compound semiconductor that is similar to the first III-V compound semiconductor and further comprises a shield layer that is configured to alter exposed portions of channels of the second III-V compound semiconductor. The first and second III-V compound semiconductors and irradiated and then electrically tested. Results of the electrical testing of the first and second III-V compound semiconductors are compared.

Abstract: A modular elongated element (1), an intramodule tensile device (11), a pair of securing and linking devices (12), and an intermodule connector device (13), interconnected using the devices and methods disclosed herein, are used to construct a virtually limitless variety of inherently-tensile constructs. In the most elemental module, the intramodule tensile device (11) connects a pair of securing and linking devices (12) which are in turn secured to two ends (14) of the modular elongated element (1).

Abstract: A method for determining a feature introduction timing plan has been disclosed. This method includes the step of determining a product attribute leadership strategy for a feature. This method further includes the step of categorizing the feature as one of a number of feature types. The method also includes estimating a first-to-market time for the feature. From this information, a feature introduction timing plan is generated that aligns this information with the overall business goals of a manufacturer. This plan can then be utilized to assess engineering readiness or allocate engineering resources.