Patents by Inventor Eric Henry Jon Antonissen

Eric Henry Jon Antonissen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6403967
    Abstract: An apparatus for ion implantation using high perveance beams is disclosed. The apparatus includes a dipole magnet apparatus that provides an adjustment to a cross-beam magnetic dipole field in an ion implantation system. Introduction and control of the magnetic dipole field gradient in a low energy implantation system as disclosed herein gives a significant improvement to the magnet's acceptance and beam focusing which largely defines the effective transported beam current. The apparatus involves the use of ferromagnetic yokes of a prescribed shape and a portion of a secondary magnet coil following along the outside radius of a set of primary dipole magnet coils which define and delineate the primary magnetic field area and beam path. The current return path for the secondary magnet coil is via another portion of the secondary magnet coil that follows a path such that the field generated by the return path secondary magnet coil is orthogonal to the primary magnetic field.
    Type: Grant
    Filed: October 15, 1999
    Date of Patent: June 11, 2002
    Assignee: Advanced Ion Beam Technology, Inc.
    Inventors: Jiong Chen, Jinliang Chen, Eric Henry Jon Antonissen