Patents by Inventor Eric Hermanson

Eric Hermanson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10867772
    Abstract: Provided herein are approaches for increasing surface area of a conductive beam optic by providing grooves or surface features thereon. In one approach, the conductive beam optic may be part of an electrostatic filter having a plurality of conductive beam optics disposed along an ion beam-line, wherein at least one conductive beam optic includes a plurality of grooves formed in an exterior surface. In some approaches, a power supply may be provided in communication with the plurality of conductive beam optics, wherein the power supply is configured to supply a voltage and a current to the plurality of conductive beam optics. The plurality of grooves may be provided in a spiral pattern along a length of the conductive beam optic, and/or oriented parallel to a lengthwise axis of the conductive beam optic.
    Type: Grant
    Filed: March 19, 2018
    Date of Patent: December 15, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Eric Hermanson, Philip Layne, James Alan Pixley
  • Publication number: 20200020508
    Abstract: Provided herein are approaches for increasing surface area of a conductive beam optic by providing grooves or surface features thereon. In one approach, the conductive beam optic may be part of an electrostatic filter having a plurality of conductive beam optics disposed along an ion beam-line, wherein at least one conductive beam optic includes a plurality of grooves formed in an exterior surface. In some approaches, a power supply may be provided in communication with the plurality of conductive beam optics, wherein the power supply is configured to supply a voltage and a current to the plurality of conductive beam optics. The plurality of grooves may be provided in a spiral pattern along a length of the conductive beam optic, and/or oriented parallel to a lengthwise axis of the conductive beam optic.
    Type: Application
    Filed: March 19, 2018
    Publication date: January 16, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Eric Hermanson, Philip Layne, James Alan Pixley
  • Patent number: 10410844
    Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: September 10, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Kevin Anglin, Brant S. Binns, Peter F. Kurunczi, Jay T. Scheuer, Eric Hermanson, Alexandre Likhanskii
  • Patent number: 10157763
    Abstract: Systems and methods for facilitating expeditious handling and processing of semiconductor substrates with a minimal number of handling devices. Such a system may include an entry load-lock configured to transfer substrates from an atmospheric environment to a vacuum chamber, an alignment station disposed in the vacuum chamber and configured to adjust orientations of substrates, a first vacuum robot configured to move substrates from the entry load-lock to the alignment station, a process station disposed in the vacuum chamber and configured to perform a designated process on substrates, first and second exit load-locks configured to transfer substrates from the vacuum chamber to the atmospheric environment, and a second vacuum robot configured to move substrates from the alignment station to the process station and further configured to move substrates from the process station to the first exit load-lock and to the second exit load-lock in an alternating fashion.
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: December 18, 2018
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Robert J. Mitchell, Eric Hermanson, Benjamin B. Riordon
  • Publication number: 20180166261
    Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.
    Type: Application
    Filed: February 8, 2017
    Publication date: June 14, 2018
    Inventors: Kevin Anglin, Brant S. Binns, Peter F. Kurunczi, Jay T. Scheuer, Eric Hermanson, Alexandre Likhanskii
  • Patent number: 9613778
    Abstract: Provided herein are approaches for securing electrostatic elements within a lens component. In one approach, a connector includes a flexible coupling secured at a first end to an electrostatic element of a plurality of electrostatic elements, the plurality of electrostatic elements extending between a set of sidewalls of the lens component. The connector further includes a stub protruding from a feedthrough component provided through the set of sidewalls, the stub secured to the flexible coupling at a second end of the flexible coupling.
    Type: Grant
    Filed: May 6, 2016
    Date of Patent: April 4, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Mayur Jagtap, Eric Hermanson, James Alan Pixley
  • Publication number: 20150063954
    Abstract: Systems and methods for facilitating expeditious handling and processing of semiconductor substrates with a minimal number of handling devices. Such a system may include an entry load-lock configured to transfer substrates from an atmospheric environment to a vacuum chamber, an alignment station disposed in the vacuum chamber and configured to adjust orientations of substrates, a first vacuum robot configured to move substrates from the entry load-lock to the alignment station, a process station disposed in the vacuum chamber and configured to perform a designated process on substrates, first and second exit load-locks configured to transfer substrates from the vacuum chamber to the atmospheric environment, and a second vacuum robot configured to move substrates from the alignment station to the process station and further configured to move substrates from the process station to the first exit load-lock and to the second exit load-lock in an alternating fashion.
    Type: Application
    Filed: August 29, 2013
    Publication date: March 5, 2015
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Robert J. Mitchell, Eric Hermanson, Benjamin B. Riordon
  • Patent number: 8698108
    Abstract: A system of measuring ion beam current in a process chamber using conductive liners is disclosed. A conductive liner is used to shield the walls of the process chamber. An ion measuring device, such as an ammeter, is used to measure the current created by the ions that impact the conductive liner. In some embodiments, a mechanism to contain secondary electrons generated in the process chamber is employed. Additionally, the ions that impact the scan system or workpiece may also be measured, thereby allowing the current of the entire ion beam to be measured.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: April 15, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Joseph P. Dzengeleski, Eric Hermanson, Robert J. Mitchell, Tyler Rockwell, James W. Wilkinson, James Paul Buonodono, Frank Sinclair
  • Patent number: 8481960
    Abstract: A system and method are disclosed for controlling an ion beam. A deceleration lens is disclosed for use in an ion implanter. The lens may include a suppression electrode, first and second focus electrodes, and first and second shields. The shields may be positioned between upper and lower portions of the suppression electrode. The first and second shields are positioned between the first focus electrode and an end station of the ion implanter. Thus positioned, the first and second shields protect support surfaces of said first and second focus electrodes from deposition of back-streaming particles generated from said ion beam. In some embodiments, the first and second focus electrodes may be adjustable to enable the electrode surfaces to be adjusted with respect to a direction of the ion beam. By adjusting the angle of the focus electrodes, parallelism of the ion beam can be controlled. Other embodiments are described and claimed.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: July 9, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Svetlana Radovanov, Jason Schaller, Richard White, Kevin Verrier, James Blanchette, Bon-Woong Koo, Eric Hermanson, Kevin Daniels
  • Patent number: 8455760
    Abstract: Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.
    Type: Grant
    Filed: January 3, 2011
    Date of Patent: June 4, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, Kasegn Tekletsadik, Anthony Renau, Piotr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Doug E. May
  • Patent number: 8143604
    Abstract: An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: March 27, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell Low, Piortr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Joseph C. Olson
  • Publication number: 20110094798
    Abstract: Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.
    Type: Application
    Filed: January 3, 2011
    Publication date: April 28, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Russell J. Low, Kasegn D. Tekletsadik, Anthony Renau, Piotr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Doug E. May
  • Publication number: 20110094862
    Abstract: Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.
    Type: Application
    Filed: January 3, 2011
    Publication date: April 28, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Douglas E. MAY, Kasegn D. Tekletsadik, Eric Hermanson, Piotr R. Lubicki, Russell J. Low, Joseph C. Olson, Stephen E. Krause
  • Patent number: 7863520
    Abstract: Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing an insulation medium between a first part and a second part in a high voltage environment; and interfacing the first part and the second part by compressing the first part and the second part against the insulation medium.
    Type: Grant
    Filed: August 14, 2007
    Date of Patent: January 4, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, Kasegn D. Tekletsadik, Anthony Renau, Piotr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Doug E. May
  • Patent number: 7863531
    Abstract: Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.
    Type: Grant
    Filed: September 26, 2007
    Date of Patent: January 4, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Douglas E. May, Kasegn D. Tekletsadik, Eric Hermanson, Piotr R. Lubicki, Russell J. Low, Joseph C. Olson, Stephen E. Krause
  • Patent number: 7842934
    Abstract: Terminal structures of an ion implanter having insulated conductors with dielectric fins are disclosed. In one particular exemplary embodiment, the terminal structures of an ion implanter may be realized with insulated conductors with one or more dielectric fins. For example, the ion implanter may comprise an ion source configured to provide an ion beam. The ion implanter may also comprise a terminal structure defining a cavity, wherein the ion source may be at least partially disposed within the cavity. The ion implanter may further comprise an insulated conductor having at least one dielectric fin disposed proximate an exterior portion of the terminal structure to modify an electric field.
    Type: Grant
    Filed: August 27, 2007
    Date of Patent: November 30, 2010
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kasegn D. Tekletsadik, Eric Hermanson, Doug May, Steve Krause, Russell John Low
  • Patent number: 7799999
    Abstract: Insulated conducting devices and related methods are disclosed. An insulated conducting device for a voltage structure comprises: a conductor connected to a voltage; and multiple insulation segments enclosing the conductor, the multiple insulation segments interfacing with one another.
    Type: Grant
    Filed: August 20, 2007
    Date of Patent: September 21, 2010
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kasegn D. Tekletsadik, Steve Krause, Eric Hermanson, Russell J. Low
  • Patent number: 7576337
    Abstract: A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.
    Type: Grant
    Filed: January 5, 2007
    Date of Patent: August 18, 2009
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Piotr Lubicki, Russell Low, Steve Krause, Eric Hermanson
  • Publication number: 20090078554
    Abstract: Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.
    Type: Application
    Filed: September 26, 2007
    Publication date: March 26, 2009
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Douglas E. May, Kasegn D. Tekletsadik, Eric Hermanson, Piotr R. Lubicki, Russell J. Low, Joseph C. Olson, Stephen E. Krause
  • Publication number: 20090057573
    Abstract: Techniques for terminal insulation for an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an ion implanter comprising a terminal structure defining a terminal cavity. The ion implanter may also comprise a grounded enclosure defining a grounded cavity and the terminal structure may be at least partially disposed within the grounded cavity. The ion implanter may further comprise an intermediate terminal structure disposed proximate an exterior portion of the terminal structure and at least partially disposed within the grounded cavity.
    Type: Application
    Filed: August 29, 2007
    Publication date: March 5, 2009
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell John LOW, Piotr R. Lubicki, Jeffrey D. Lischer, Steve Krause, Eric Hermanson, Joseph C. Olson, Kasegn D. Tekletsadik