Patents by Inventor Eric J. Ameele

Eric J. Ameele has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making an insulated gate semiconductor device and structure
    Patent number: 8642425
    Abstract: In one embodiment, a trench shield electrode layer is separated from a trench gate electrode by an inter-electrode dielectric layer. A conformal deposited dielectric layer is formed as part of a gate dielectric structure and further isolates the trench shield electrode from the trench gate electrode. The conformal deposited dielectric layer is formed using an improved high temperature oxide (HTO) low pressure chemical vapor deposition (LPCVD) process.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: February 4, 2014
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Peter A. Burke, Eric J. Ameele
  • METHOD OF MAKING AN INSULATED GATE SEMICONDUCTOR DEVICE AND STRUCTURE
    Publication number: 20130323921
    Abstract: In one embodiment, a trench shield electrode layer is separated from a trench gate electrode by an inter-electrode dielectric layer. A conformal deposited dielectric layer is formed as part of a gate dielectric structure and further isolates the trench shield electrode from the trench gate electrode. The conformal deposited dielectric layer is formed using an improved high temperature oxide (HTO) low pressure chemical vapor deposition (LPCVD) process.
    Type: Application
    Filed: May 29, 2012
    Publication date: December 5, 2013
    Inventors: Peter A. Burke, Eric J. Ameele